The present disclosure relates to the technical field of back-contact cells, and in particular, to a preparation method for a
hybrid passivated back-contact
cell with partial
mask layer removed, comprising the following steps: S1, providing a double-sided polished
silicon wafer; S2, sequentially forming a first
semiconductor layer and a
mask layer on the back surface of the
silicon wafer obtained in S1; S3, performing first
etching on the first
semiconductor layer to form second
semiconductor opening areas spaced apart; S4, texturing and cleaning; S5, removing part of the
mask layer to reduce the thickness D of the
mask layer formed in S2; S6, forming a second semiconductor layer on the back surface obtained in S5; and S7, using
laser to perform second
etching on a polished area on the back surface of the
silicon wafer obtained in S6, to form first semiconductor opening areas. According to the present disclosure, by removing
partial thickness of the
mask layer, the adhesion between the
mask layer and the second semiconductor layer can be enhanced, and the
passivation effect of the second semiconductor layer is improved, thereby improving the
cell yield and the
cell conversion efficiency; moreover, the process steps are simplified, reducing the device cost.