Ultra-wideband gallium nitride device small-signal model and parameter extracting method thereof

Abstract

The invention discloses an ultra-wideband gallium nitride device small-signal model and a parameter extracting method thereof. Three interconnected capacitor and cascaded inductor network structure forms are adopted for the grating end, the source end and the drain end of the small-signal model respectively, and the small-signal model comprises 18 parasitic parameters and 10 intrinsic parameters; the parasitic parameters comprise outer layer parasitic capacitance Cpgi1, Cpdi1, Cgdi1 and others, parasitic inductance Lgi1, Ldi1, Lsi1 and others and parasitic resistance Rg, Rd and Rs; the intrinsic parameters comprise intrinsic capacitance Cgd, Cgs and Cds and intrinsic resistance Rgs, Rgd and Rds, wherein an intrinsic current source Ids is equal to Gm plus ta as parameters in ViGme-j omega ta. The model can accurately describe the characteristics of a high-frequency device, has wider application frequency band and can adapt to a W frequency band as the highest; by the utilization of the parameter extracting method, the model parameters can have good stability within the frequency range of 0.2-110 GHz.

Description

technical field [0001] The invention relates to the technical field of microwave devices, in particular to a small-signal model of an ultra-wideband gallium nitride device and a parameter extraction method thereof. Background technique [0002] Gallium Nitride High Electron Mobility Transistor (GaN HEMT) is widely used in microwave circuits due to its high frequency and high power characteristics. Since GaN HEMTs need to work under high temperature and high power conditions, the large-signal equivalent circuit model is the basis for microwave circuit design using GaN HEMTs. In the bottom-up (bottomup) modeling method, an accurate small-signal model is the premise of establishing a large-signal model, so the small-signal model is an important link in the device modeling process. Due to the different working mechanisms of GaN HEMT devices, the small-signal models of first-generation semiconductor (silicon) and second-generation semiconductor (gallium arsenide, indium phosphid...

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Problems solved by technology

where C pga 、C pda 、C gda describes the parasitic capacitance caused by the metal pad, C pgi 、C pdi 、C gdi , L g , L d , L s Describes the parasitic capacitance and inductance caused by the gate, drain, and source metal electrodes, R d , R s describes the ohmic contact and channel resistance between a metal electrode and a semiconductor, R g The metal Schottky barrier resistance is described, and the designer of the equivalent circuit model applies it to the W band, and proposes a more reasonable parameter extraction method, that is, completely removes the influence of the excessively structured coplanar waveguide (CPW), only in The parasitic parameters are extracted in the case of HEMT zero bias and pinch-off, and all parasitic parameters can be obtained without any optimization algorithm, but the distribution effect of the device is not well resolved when describing the small signal characteristics, and then when describing the W-band HEMT small signal S The error obtained when the parameters are large

[0005] In summary, the small-signal equivalent circuit model proposed by Jarndal et al. is not suitable for the W frequency band because the parasitic parameter network is too simple. The equivalent circuit model proposed by Nguyen et al. is applied, focusing on the coplanar waveguide in the peel test The high-frequency effect on the device still uses a relatively simple parasitic parameter network, so the accuracy is poor, that is, the small-signal circuit model of the gallium nitride high electron mobility transistor in the prior art has a technical defect that is not suitable for the W-band

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