Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Yb3+ blended tellurate glass and its preparing method

A tellurate glass and glass technology, applied in the field of tellurate glass, can solve the problems of poor devitrification resistance, less research on doped tellurate glass, etc. Effect of Devitrification Resistance

Inactive Publication Date: 2005-03-02
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Yb 3+ Doped tellurite glass has a large emission cross-section and a wide fluorescence linewidth, making it an ideal host material for lasers, but its poor anti-devitrification ability makes tellurite glass-based lasers still in the development stage
Domestic for Yb 3+ Laser research is in its infancy, and for Yb 3+ Doped tellurite glasses are less studied

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Yb3+ blended tellurate glass and its preparing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The present invention will be further described below in conjunction with specific examples.

[0032] The molar composition of the glass formulation of the present invention is shown in Table 1.

[0033] Table 1: Formulation composition of oxyfluoride glass-ceramics (mol%)

[0034] TeO 2

60~80

ZnO

5~15

WO 3

0~25

Na 2 o

0~5

K 2 o

0~5

La 2 o 3

0~4.5

Yb 2 o 3

0.5~5

[0035] Table 2 has listed the Yb of 7 groups of specific examples 3+ Doped tellurite glass formulations;

[0036] Table 2 The 7 groups of Yb implemented in detail 3+ Doped Tellurite Glass Formulation

[0037] glass component

No. 1

2nd

No. 3

No. 4

number 5

number 6

No. 7

TeO 2

80

75

70

70

70

65

60

ZnO

15

15

15

10

5

5

5

WO 3

0 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention is Yb3+ doped tellurate glass and its preparation process. The glass consists of TeO2 60-80 mol%, ZnO 5-15 mol%, WO3 0-25 mol%, La2O3 0-4.5 mol%, Na2O3 0-5 mol%, K2O 0-5 mol%, and Yb2O3 0.5-5 mol%. It is prepared through smelting process, and is colorless, transparent, no defitrification, good in transparency loss resisting performance and excellent in physical and chemical performance. The semiconductor light source pump test of 940 nm band proves its stimulated emission cross section as high as 0.35 sq pm and effective fluorescent line width as high assemble 80 nm. Compared with available technology, the glass of the present invention has the advantages of simple preparation process, high heat stability, great absorption and stimulated emission cross section and wide fluorescent line width. The glass material may be used in high power pulse adjustable laser, micro solid fiber laser, etc.

Description

technical field [0001] The present invention relates to tellurite glass, especially a Yb 3+ Doped tellurite glasses and methods of making them. Background technique [0002] due to Yb 3+ The electronic configuration has only one ground state 2 f 7 / 2 and an excited state 2 f 5 / 2 Compared with other rare earth ions, the excited ions used as lasers have a series of advantages: the absorption band is in the wavelength range of 0.8-1.1 μm, and can be effectively coupled with the InGaAs semiconductor pump source; there is no excited state absorption (ASE), and the light conversion High efficiency; the pump wavelength is very close to the laser output wavelength, and the quantum efficiency can be as high as 90%; there will be no concentration quenching and multiphonon relaxation under high doping concentration; long fluorescence lifetime, wide gain bandwidth, and low heat load Wait. Therefore, since the emergence of high-power Ti:sapphire lasers and laser diodes in the late ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C03C3/12
CPCC03C3/122
Inventor 汪国年姜中宏徐时清戴世勋张军杰
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products