Process for synthesizing quartz glass by horizontal silicon tetrachloride vapor deposition

A horizontal silicon tetrachloride, synthetic quartz technology, applied in glass forming, glass production, glass deposition furnace and other directions, can solve the problems of reducing the strength of the base rod to bear the weight, low material surface temperature, low material yield and other problems , to improve the strength and anti-devitrification properties, increase the high temperature area, and improve the deposition environment.

Active Publication Date: 2006-09-27
CHINA BUILDING MATERIALS ACAD
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Problems solved by technology

There are three problems in the setting of this horizontal furnace: one is that the base rod is a solid rod, because it is set horizontally, as the deposition target surface accepts the deposit of the burner, its weight increases and the length of the base rod increases. The pressure and tension of the base rod increase exponentially, which in turn causes the self-weight fracture of the base rod; the second base rod traverses the temperature field from room temperature to 1500°C. Since deposition is a slow process, the base rod stays in such a temperature field for a long time , will cause crystallization, reduce the strength of the basic rod to bear the weight, and cause the basic rod to break, thus limiting the production of large-size, large-diameter quartz glass; thirdly, the horizontal furnace is open-type production, the inner diameter of the furnace is small, and the furnace temperature is low. Low; moreover, one burner is used to heat the material. The burner has only two oxygen chambers inside and outside. The high-temperature area of ​​the burner is small, the combustion capacity is low, the temperature of the material surface is low, the efficiency of the material is low, and the energy consumption is large; The quartz glass ingot produced by the traditional horizontal process is generally only 10-20 kg, the diameter is 150-180 mm, and the deposition rate is 40-100 g / hour, which cannot produce large-sized and large-diameter quartz glass products

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  • Process for synthesizing quartz glass by horizontal silicon tetrachloride vapor deposition
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  • Process for synthesizing quartz glass by horizontal silicon tetrachloride vapor deposition

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Embodiment Construction

[0024] The invention provides a method for synthesizing quartz glass by horizontal silicon tetrachloride vapor deposition with multiple burners. In this method, the synthesis mechanism is the same as that of the existing horizontal process: in the burner, hydrogen and oxygen are burned to generate water vapor, Water vapor then reacts with gaseous silicon tetrachloride to produce silica particles; the resulting silica is deposited at high temperatures in a deposition furnace to form a quartz glass ingot. The specific process can be as follows: the gas with material flows through the purification drier to remove water vapor, after drying, the gas with material enters the drumming bottle through the deposition bottle (buffering effect), and the silicon tetrachloride liquid is bubbled and vaporized, and the gas with material and gaseous state The silicon tetrachloride mixed gas enters the lower feed pipe of the burner through the vaporization bottle; then the silicon tetrachloride ...

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Abstract

The invention discloses a horizontal silicon chloride vapour deposition synthesizing quartz glass method, which comprises the following parts: chimney, furnace body, deposition target surface, burner, basis bar and lathe, wherein the furnace body is blocked style furnace body; the front of furnace installs burner; the burner includes multiple-layer oxygen chamber; every oxygen chamber has a loop of oxygen lamp wick pipe; the bottom of multiple-layer oxygen chamber installs a hydrogen gas chamber; the bilateral oxygen chamber sets up two hydrogen air feeders; the basis bar forms hollow tube type, which places in furnace body; the number of the burners can be two to ten. The invention is characterized by the following: it makes the product weight reach to 100-200Kg; the diameter ratio of the quartz glass ingot is more than 250mm; the deposition rate can reach the speed at 180-500 grams an hour; the production efficiency can be improved three to five times than traditional.

Description

technical field [0001] The invention relates to a method for synthesizing quartz glass by vapor phase deposition of silicon tetrachloride, in particular a method for synthesizing quartz glass by using an improved horizontal deposition furnace. Background technique [0002] For a long time, in the horizontal production process used in the production of quartz glass, the deposition furnace has been a traditional horizontal furnace, as shown in Figure 1 and Figure 2. Inside the furnace body, there is a deposition mound surface fixed to the port of the foundation rod. The furnace body is open, with a chimney in the middle, a burner outside one end of the furnace body, and a foundation rod pierced through the other end. The foundation rod passes through one end of the furnace body and a Lathe connection; the synthesis of quartz glass is usually formed by accepting the burner cutting material on the deposition target surface. There are three problems in the setting of this horizo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03B20/00
CPCC03B2207/50C03B19/1423Y02P40/57
Inventor 向在奎隋梅饶传东钟海顾真安王玉芬
Owner CHINA BUILDING MATERIALS ACAD
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