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Process for synthesizing guartz glass by vertical silicon tetrachloride vapor deposition

A silicon tetrachloride and vapor deposition technology, applied in glass forming, glass manufacturing equipment, manufacturing tools and other directions, can solve the problems of restricting the production of large-sized quartz glass, reducing the strength of the base rod, and breaking the base rod under its own weight. Reduced energy consumption, rapid deposition, energy saving effect

Inactive Publication Date: 2007-06-27
CHINA BUILDING MATERIALS ACAD
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Problems solved by technology

There are three problems in the installation of horizontal furnaces: one is that the foundation rods are set horizontally, and the weight and the length of the foundation rods increase as the deposition mound surface accepts the deposits from the burner, and the pressure and tension on the foundation rods are doubled growth, which in turn causes the self-weight fracture of the basic rod; the second basic rod traverses the temperature field from room temperature to 1500°C. Since deposition is a slow process, the basic rod is in such a temperature field for a long time, which will cause crystallization. Reduce the strength of the base rod to bear the weight, resulting in the breakage of the base rod, thus limiting the production of large-size, large-diameter quartz glass; thirdly, the horizontal furnace is open-type production, which has low furnace temperature, high energy consumption and low efficiency
Due to the problem of the deposition furnace, the quartz glass ingot produced by the horizontal process is generally 10-20 kg, the diameter is 150-180 mm, the deposition rate is 40-100 g / hour, light weight, small diameter and low efficiency

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  • Process for synthesizing guartz glass by vertical silicon tetrachloride vapor deposition
  • Process for synthesizing guartz glass by vertical silicon tetrachloride vapor deposition
  • Process for synthesizing guartz glass by vertical silicon tetrachloride vapor deposition

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Embodiment Construction

[0020] The invention provides a method for synthesizing quartz glass by vapor phase deposition of silicon tetrachloride. In this method, the synthesis mechanism is the same as that of the existing horizontal process: in the burner, hydrogen and oxygen are burned to produce water vapor, and then the water vapor is combined with the gaseous Silicon tetrachloride reacts to produce silica particles; the resulting silica is deposited at high temperature in a deposition furnace to form a quartz glass ingot. The specific process can be as follows: the gas with material flows through the purification drier to remove water vapor, after drying, the gas with material enters the drumming bottle through the deposition bottle (buffering effect), and the silicon tetrachloride liquid is bubbled and vaporized, and the gas with material and gaseous state The silicon tetrachloride mixed gas enters the lower feed pipe of the burner through the vaporization bottle; then the silicon tetrachloride ga...

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Abstract

The present invention discloses the vertical silicon tetrachloride vapor deposition process of synthesizing quartz glass. One vertical deposition furnace is designed, which includes chimney, closed furnace body, burner in the top of the furnace body, base rod standing inside the furnace body, deposition plane on the base rod and opposite to the burner, and lathe clamped to the lower part of the base rod. There may be several burners with several material feeding tubes each. The present invention makes it possible to produce quartz glass ingot with weight of 30-50 Kg and diameter of 250-500 mm in the deposition rate of 200-500 g / hr, 1-5 times higher than that of horizontal deposition furnace.

Description

technical field [0001] The invention relates to a method for synthesizing quartz glass by vapor phase deposition of silicon tetrachloride. Background technique [0002] For more than two decades, quartz glass has been produced using a horizontal CVD production process. In this process, the deposition furnace adopts a horizontal furnace. The base rod of the furnace is arranged horizontally, one end is located inside the furnace body, and a deposition mound surface is fixed to the end of the base rod. As shown in Figure 1, the furnace body is open. , where the middle part is a chimney, a burner is provided outside one end of the furnace body, and a base rod is pierced through the other end. Crystals formed. There are three problems in the installation of horizontal furnaces: one is that the foundation rods are set horizontally, and the weight and the length of the foundation rods increase as the deposition mound surface accepts the deposits from the burner, and the pressure ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03B20/00C03B19/14
CPCC03B19/1407
Inventor 顾真安王玉芬向在奎饶传东钟海隋梅
Owner CHINA BUILDING MATERIALS ACAD
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