11 results about "Tellurium oxide" patented technology

A vacuum insulating panel may include: a first glass substrate; a second glass substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at a pressure less than atmospheric pressure; 5 and a seal (e.g., edge seal and / or pump-out tube seal) having at least a first seal layer. In order to form a layer of the seal, a glass may be provided such as in a paste which may also include filler, binder and / or solvent, or in a pressed preform which may also include filler. The glass (e.g., the glass, such as glass powder, present in a paste before firing) for 10 use in forming the seal layer may include tellurium oxide and may be designed to have little or no aluminum oxide and / or little or no zinc oxide.

A method for manufacturing a tellurium-based semiconductor device comprises the steps of: preparing a substrate; depositing, on the substrate, a tellurium-based semiconductor material including tellurium and a tellurium oxide so as to form a tellurium-based semiconductor layer; and forming a passivation layer on the tellurium-based semiconductor layer. According to the manufacturing method, heat treatment at a high temperature or cryogenic conditions are not required, and thus, it is possible to manufacture a semiconductor device through a practical process. In addition, since the crystallinity of the tellurium-based semiconductor layer is improved during the manufacturing process, it is possible to provide a p-type semiconductor device having excellent electrical characteristics such as electric field mobility and a current blink ratio.

A vacuum insulating panel may include: a first glass substrate; a second glass substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at a pressure less than atmospheric pressure; and a seal having at least a first seal layer provided between at least the first and second substrates. The first seal layer and / or a tube seal of the panel may be designed to have an increased density. In order to form a layer of the seal for the edge seal and / or tube seal, a glass composition may be provided such as in a paste which may also include filler, binder and / or solvent. The glass composition (e.g., the glass, such as glass powder, present in a paste before firing) for use in forming the seal layer may include tellurium oxide, bismuth oxide, and optionally vanadium oxide, and may be designed to increase the density of the seal layer.

The conductive paste provided by this invention comprises a conductive metal, lead-free glass powder, and an organic binder. The conductive metal and the lead-free glass powder constitute the total solids content, wherein the content of the conductive metal in the total solids content is 75-99.8 wt%, and the content of the lead-free glass powder is 0.2-25 wt%. The lead-free glass powder is a Te-Bi oxide system, which includes tellurium oxide and bismuth oxide. Tellurium oxide, as a glass network former, mainly determines the softening point and fluidity of the glass, effectively reducing the melting point and imparting good fluidity. Bismuth oxide, as a network modifier, can regulate the chemical activity of the glass, allowing it to moderately corrode the passivation layer during sintering and promoting the formation of silver-silicon ohmic contacts. Adjusting the ratio of the two within this range allows for precise matching of the sintering temperature curves of different crystalline silicon solar cells, broadening the process window for lead-free glass. Furthermore, this invention also provides a method for preparing the conductive paste.

This invention provides an activation solution for activating cadmium telluride thin films and its application in the preparation of cadmium telluride thin-film solar cells. The activation solution uses tellurium tetrachloride and cadmium perchlorate hydrate as additives added to an aqueous solution of cadmium chloride. Tellurium tetrachloride generates tellurium dioxide and further tellsurium, which remains on the surface of the cadmium telluride, forming a tellurium-rich layer. Cadmium perchlorate or its hydrate acts as a dispersant, preventing the aggregation of tellurium dioxide and tellurium generated by tellurium tetrachloride, thus promoting the formation of a uniform tellurium-rich layer. Furthermore, cadmium perchlorate hydrate can decompose into cadmium chloride, which can also be used as an activation material. When this activation solution is used in the preparation of cadmium telluride thin-film solar cells, no residual chlorine atoms are detected in the activated cadmium telluride film, and acid etching is unnecessary. A tellurium-rich layer is formed on the crystal surface, and the resulting cadmium telluride solar cell chip achieves a power generation efficiency of 18.5%.

One embodiment of a ternary inverter is provided. The ternary inverter comprises a gate electrode. The gate electrode overlaps with a first tellurium oxide layer in a P-type transistor area. An n-type oxide semiconductor layer and a second tellurium oxide layer, which form a PN junction overlapping with the gate electrode, are arranged in a heterojunction transistor area. A high dielectric constant gate insulating film is arranged between the gate electrode and the first tellurium oxide layer, between the gate electrode and the n-type oxide semiconductor layer, and between the gate electrode and the second tellurium oxide layer. A first electrode connected to the first tellurium oxide layer, a second electrode connected to both the first tellurium oxide layer and the second tellurium oxide layer, and a third electrode connected to the n-type oxide semiconductor layer are arranged.

A method for manufacturing a semiconductor thin film containing tellurium oxide doped with sulfur atoms and heterologous atoms is disclosed. [Solution] According to the present invention, by using sulfur atoms and adjusting the annealing of a semiconductor thin film, a high hole field effect mobility and 10 7 This provides a thin-film transistor having a semiconductor thin film that exhibits excellent output / transmission characteristics and superior electrical performance with a high on / off current ratio reaching [a certain value].

A vacuum insulating panel may include: a first glass substrate; a second glass substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at a pressure less than atmospheric pressure; and a seal having at least a first seal layer provided between at least the first and second substrates. Amorphous or substantially amorphous silica (e.g., fused silica) may be used in the seal layer, and in the composite material for forming same. In order to form a layer of the seal for the edge seal and / or tube seal, a glass composition may be provided such as in a paste which may also include filler (which may include the amorphous silica), binder and / or solvent. The glass composition (e.g., the glass, such as glass powder, present in a paste before firing) for use in forming the seal layer may include one or more of tellurium oxide, bismuth oxide, and / or vanadium oxide, and may be designed to increase the density of the seal layer.

Disclosed is a method for manufacturing semiconductor thin film comprising tellurium oxide alloyed with sulfur atom and hetero atom. According to the present disclosure, by using a sulfur atom and controlling the annealing of the semiconductor thin film, a thin film transistor can be provided that comprises a semiconductor thin film exhibiting excellent output and transfer characteristics and superior electrical performance, with a high hole field-effect mobility and a high on / off current ratio of about 107.

A vacuum insulating panel may include: a first glass substrate; a second glass substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at a pressure less than atmospheric pressure; and a seal (e.g., edge seal and / or pump-out tube seal) having at least a first seal layer. In order to form a layer of the seal, a glass may be provided such as in a paste which may also include filler, binder and / or solvent, or in a pressed preform which may also include filler. The glass (e.g., the glass, such as glass powder, present in a paste before firing) for use in forming the seal layer may include tellurium oxide and may be designed to have little or no aluminum oxide and / or little or no zinc oxide.

A vacuum insulating panel may include: a first glass substrate; a second glass substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at a pressure less than atmospheric pressure; and a seal having at least a first seal layer provided between at least the first and second substrates. Amorphous or substantially amorphous silica (e.g., fused silica) may be used in the seal layer, and in the composite material for forming same. In order to form a layer of the seal for the edge seal and / or tube seal, a glass composition may be provided such as in a paste which may also include filler (which may include the amorphous silica), binder and / or solvent. The glass composition (e.g., the glass, such as glass powder, present in a paste before firing) for use in forming the seal layer may include one or more of tellurium oxide, bismuth oxide, and / or vanadium oxide, and may be designed to increase the density of the seal layer.