44 results about "Tellurium oxide" patented technology

The invention discloses a P-type tellurium oxide thin film field effect transistor and a preparation method thereof. The transistor is provided with a bottom gate top contact structure. The preparation method comprises the following steps: firstly, cleaning the silicon / silicon dioxide substrate, then depositing a tellurium oxide film as the semiconductor active layer by using a metal mask and an electron beam evaporation method, and finally preparing a layer of nickel with the thickness of about 50nm on the active layer by using the mask to serve as the source electrode and the drain electrode. Compared with a traditional tellurium oxide transistor, the tellurium oxide transistor prepared by the method has the advantages that the carrier mobility and the switching ratio are obviously improved, and the hysteresis effect can be ignored. The electrical performance of the tellurium oxide transistor with the bottom gate top contact structure is improved, and the tellurium oxide transistor has the advantages of being low in cost and simple in process step.

Disclosed are a semiconductor comprising amorphous tellurium oxide, thin film transistor and method of fabricating same. In detail, a semiconductor comprising a chalcogen atom comprising at least one selected from the group consisting of a sulfur atom (S) and a selenium atom (Se); and tellurium composite comprising a tellurium (Te) atom and tellurium oxide. A thin film transistor (TFT) fabricated based on the TeOx channel layer according to the present disclosure exhibits excellent output / transfer characteristics and superior electrical performance with high hole field-effect mobility and a high on / off current ratio of ˜107.

The utility model relates to a device for producing tellurium powder by using tellurium dioxide, and belongs to the technical field of tellurium powder production equipment. Comprising a leaching kettle, a plate-and-frame filter press, a primary reduction kettle, a primary reduction filter barrel, a secondary reduction kettle, a secondary reduction filter barrel and a waste liquid tank which are sequentially connected, materials in the leaching kettle are conveyed into the plate-and-frame filter press through a first conveying pump, and the leaching kettle is further connected with a hydrochloric acid storage tank through a pipeline; the opening of the primary reduction kettle is positioned right above the primary reduction filter barrel, and the primary reduction kettle is also connected with a sulfur dioxide steel cylinder; materials in the primary reduction filter barrel are conveyed into a secondary reduction kettle through a second conveying pump; an outlet of the secondary reduction kettle is positioned right above the secondary reduction filter barrel, and the secondary reduction kettle is also connected with a sulfur dioxide steel cylinder; materials of the secondary reduction filter barrel are input into the waste liquid tank through a third conveying pump; the tellurium dioxide is produced by adopting the method, the technological operation is simple, the production efficiency is high, the tellurium content of the liquid after secondary reduction is low, the liquid can be reused in a leaching kettle, and the use amount of hydrochloric acid is reduced.

The invention discloses a preparation method of silver-coated copper slurry suitable for TOPCON, and relates to the technical field of battery preparation, and the preparation method comprises the following steps: preparing silver-coated copper particles; silver-coated copper particles are mixed with a glass system, an organic system and nanoscale silver particles according to the mass ratio to prepare silver-coated copper slurry; the silver-coated copper particles sequentially comprise a copper core, an aluminum oxide protection layer, a nickel layer and a nano-silver coating layer from inside to outside, and the silver-coated copper slurry is formed by mixing the silver-coated copper particles, a glass system, an organic system and nano-scale silver particles according to a mass ratio. The glass system is composed of bismuth oxide-boric oxide composite glass, zinc oxide-silicon oxide composite glass and tellurium oxide glass. According to the invention, the silver-coated copper particles with a multi-layer coating structure are used as a main conductive phase and are combined with the nano-silver particles, so that the conductive performance is ensured, the raw material cost of the paste is reduced, the cost pressure is dealt with, the problems of copper core oxidation and ion migration are solved, and the paste can be kept stable in a high-temperature and high-humidity environment.

The application discloses a method for preparing high-purity tellurium dioxide powder from waste tellurium dioxide target material, comprising the following steps: step one, crushing the waste tellurium dioxide target material to obtain tellurium dioxide pre-crushed material; step two, ball-milling the tellurium dioxide pre-crushed material and drying to obtain tellurium dioxide powder; and step three, purifying the tellurium dioxide powder to obtain high-purity tellurium dioxide powder. 131 The application solves the problems of traditional powderization process, such as serious powder agglomeration, wide particle size distribution, easy introduction of impurities and poor industrial applicability, and the prepared powder can be directly applied to the production of tellurium dioxide target material, and the method can also be applied to the preparation of tellurium dioxide single crystal, infrared acousto-optic devices and electronic component materials, and has excellent industrial application prospect.

The invention relates to the technical field of beta-Ga2O3 crystal material growth, in particular to a fluxing agent of a beta-Ga2O3 crystal and a preparation method of a single crystal X-ray detector of the fluxing agent. A fluxing agent for growing the beta-Ga2O3 crystal comprises tellurium oxide and divalent alkaline earth metal carbonate. Uniformly mixing gallium oxide and a fluxing agent to obtain a mixed material; transferring the mixed material into a crystal growth furnace, and heating to melt the mixed material to obtain a melt; and cooling the melt to 0.5-3 DEG C above the saturation point temperature, putting a seed crystal into the melt, cooling to enable the crystal to grow, taking out the crystal after the growth is finished, and cooling to room temperature to obtain the beta-Ga2O3 crystal. The fluxing agent provided by the invention does not contain toxic components such as lead, fluorine and the like, the crystal growth temperature range of the fluxing agent is approximately 780-850 DEG C, the growth temperature of the crystal is effectively reduced, the volatilization of a melt at a high temperature is reduced, the deviation and viscosity of solution components are reduced, the corrosion to a platinum crucible is reduced, and the beta-Ga2O3 crystal with high quality and large size is easy to obtain.

A vacuum insulating panel may include: a first glass substrate; a second glass substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at a pressure less than atmospheric pressure; 5 and a seal (e.g., edge seal and / or pump-out tube seal) having at least a first seal layer. In order to form a layer of the seal, a glass may be provided such as in a paste which may also include filler, binder and / or solvent, or in a pressed preform which may also include filler. The glass (e.g., the glass, such as glass powder, present in a paste before firing) for 10 use in forming the seal layer may include tellurium oxide and may be designed to have little or no aluminum oxide and / or little or no zinc oxide.

A method for manufacturing a tellurium-based semiconductor device comprises the steps of: preparing a substrate; depositing, on the substrate, a tellurium-based semiconductor material including tellurium and a tellurium oxide so as to form a tellurium-based semiconductor layer; and forming a passivation layer on the tellurium-based semiconductor layer. According to the manufacturing method, heat treatment at a high temperature or cryogenic conditions are not required, and thus, it is possible to manufacture a semiconductor device through a practical process. In addition, since the crystallinity of the tellurium-based semiconductor layer is improved during the manufacturing process, it is possible to provide a p-type semiconductor device having excellent electrical characteristics such as electric field mobility and a current blink ratio.

A vacuum insulating panel may include: a first glass substrate; a second glass substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at a pressure less than atmospheric pressure; and a seal having at least a first seal layer provided between at least the first and second substrates. The first seal layer and / or a tube seal of the panel may be designed to have an increased density. In order to form a layer of the seal for the edge seal and / or tube seal, a glass composition may be provided such as in a paste which may also include filler, binder and / or solvent. The glass composition (e.g., the glass, such as glass powder, present in a paste before firing) for use in forming the seal layer may include tellurium oxide, bismuth oxide, and optionally vanadium oxide, and may be designed to increase the density of the seal layer.

The invention relates to a method for preparing 4N refined tellurium by comprehensively utilizing tellurium anode slime. The method comprises the following steps: S1, drying and ball-milling the tellurium anode slime; s2, water is added into the tellurium anode slime obtained after drying and ball milling for preheating so that the tellurium anode slime can be pulpified, and then solid sodium chloride and concentrated sulfuric acid are sequentially added for stirring and leaching; slowly adding ammonium sulfate into the leachate; and after the reaction is completed, adjusting the temperature and pH of the system to obtain the electrolyte. S3, the electrolyte is fed into a circulating electrolytic bath for selective reduction removal of main impurities, then solid-liquid separation is conducted after filtering is conducted through a ceramic membrane, and the purified electrolyte is obtained; s4, adjusting the potential of the purified electrolyte for electrolysis, and generating tellurium dioxide precipitate through hydrolysis; s5, washing, filtering and vacuum drying the tellurium dioxide precipitate, and cooling to room temperature to obtain high-quality tellurium dioxide; and S6, dissolving tellurium dioxide in a sodium hydroxide solution, and directly preparing 4N refined tellurium with the tellurium content being greater than or equal to 99.995% by adopting an electrodeposition process. The method is simple, efficient and low in cost.

The conductive paste provided by this invention comprises a conductive metal, lead-free glass powder, and an organic binder. The conductive metal and the lead-free glass powder constitute the total solids content, wherein the content of the conductive metal in the total solids content is 75-99.8 wt%, and the content of the lead-free glass powder is 0.2-25 wt%. The lead-free glass powder is a Te-Bi oxide system, which includes tellurium oxide and bismuth oxide. Tellurium oxide, as a glass network former, mainly determines the softening point and fluidity of the glass, effectively reducing the melting point and imparting good fluidity. Bismuth oxide, as a network modifier, can regulate the chemical activity of the glass, allowing it to moderately corrode the passivation layer during sintering and promoting the formation of silver-silicon ohmic contacts. Adjusting the ratio of the two within this range allows for precise matching of the sintering temperature curves of different crystalline silicon solar cells, broadening the process window for lead-free glass. Furthermore, this invention also provides a method for preparing the conductive paste.

A vacuum insulated glass (VIG) unit, and a window having the same, the VIG unit including paired glass sheets separated by support structures maintaining a gap between the paired glass sheets, a dense edge sealing peripherally arranged creating a sealed cavity between the paired glass sheets, a getter placed in the gap between the glass sheets, where the pressure in the sealed cavity is no higher than 0.001 mbar, where at least one of the first glass sheet and the second glass sheet includes a low-emission coating, where the edge sealing is made from low temperature glass frit powder material, and includes less than 0.1 wt % lead, less than 1 wt % solvent and less than 1 wt % binder, where gaseous inclusions in the edge sealing constitutes less than 5% of the total volume, and where the glass frit powder material includes tellurium oxide and vanadium oxide.

To provide a sealing material containing a glass composition which contains neither lead oxide nor vanadium oxide, can be fluidized by firing at a low temperature, and is excellent in acid resistance of a fired body.SOLUTION: A sealing material comprising a tellurium oxide-based glass composition substantially free of any of lead oxides and vanadium oxides, wherein the tellurium oxide-based glass composition comprises, as represented by mol% in terms of oxides, 44 to 70% of TeO2, 2 to 25% of Nb2O5, 3 to 20% of ZnO, and 0 to 15% in total of one or more of MgO, CaO, SrO, and BaO.SELECTED DRAWING: None

Glass compositions include boron oxide (B2O3), lanthanum oxide (La2O3), tungsten oxide (WO3) and zirconia (ZrO2) as components and may optionally include niobia (Nb2O5), titania (TiO2), bismuth oxide (Bi2O3), yttria (Y2O3), tellurium oxide (TeO2), SiO2, PbO and other components. The glasses may be characterized by high refractive index at 587.56 nm and low density at room temperature relative to known glasses.

The invention discloses a method for separating and purifying tellurium from casting slag through multi-property synergistic reduction. The method comprises the following steps that the casting slag is subjected to ball milling; uniformly mixing the casting slag powder with a carbon-sulfur dual-function synergistic reducing agent; placing in a vacuum reaction device, carrying out a multi-property synergistic reduction reaction, carrying out carbon thermal reduction deoxidation on the tellurium oxide, carrying out sulfuration volatilization on impurity elements, and collecting a volatile product to obtain crude tellurium; selective volatilization of impurities and recondensation purification of tellurium are achieved on the obtained crude tellurium under the conditions of different temperature zones and pressure intensities, and finally high-purity tellurium with the purity larger than or equal to 99.99 wt% is obtained. According to the method, high-purity tellurium with the purity larger than 99.99% is prepared through efficient separation and purification from the casting slag, efficient resource recovery and protection of solid waste residues in the metallurgical process can be synchronously achieved, the casting slag is fully utilized, the whole process is easy to operate, no secondary oxidizing slag is generated, and a new thought is provided for resource recovery of the casting slag and high-purity preparation of tellurium.

A semiconductor device may include a substrate, source / drain electrodes on the substrate, a channel layer on the source / drain electrodes, a barrier film on the channel layer, a gate electrode on the barrier film, and an intermediate layer between a corresponding one of the source / drain electrodes and the channel layer, the intermediate layer including metal oxide, wherein the channel layer may include an oxide semiconductor material, and the oxide semiconductor material may include tellurium (Te) oxide and one or more oxides of sulfur (S) or selenium (Se).

The application provides a method for efficiently removing impurity tellurium in crude selenium, and relates to the field of dispersed metal purification technology.The method comprises the following steps: adding SeO2 into crude selenium raw material which is soluble with tellurium, and melting, so as to selectively oxidize elemental tellurium in the crude selenium melt; and then, by virtue of the difference between the saturated vapor pressures of oxidized tellurium and selenium, the impurity tellurium in the crude selenium can be efficiently removed through vacuum distillation treatment, the tellurium is enriched in the form of oxidized tellurium in the distillation residue, and selenium products with a certain purity are obtained in the volatile matter. By using the method, the recovery rate of selenium can reach more than 90%, the added SeO2 in the crude selenium is reduced to elemental selenium by tellurium, the residual SeO2 in the reaction is volatilized in the melting process, and no other impurities are introduced, so that an innovative method for the purification of selenium is provided. The method is simple, efficient, energy-saving and environment-friendly, and low in cost, and has a milestone significance in the field of selenium-tellurium separation.

A vacuum insulating panel includes may include: a first substrate; a second substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at a pressure less than atmospheric pressure; a seal provided between at least the first and second substrates, the seal comprising a first seal layer and / or a second seal layer; and wherein the first seal layer may include from about 20-80 wt. % tellurium oxide, the tellurium oxide comprising TeO4 and TeO3, and wherein the first seal layer comprises more TeO3 than TeO4 by wt. %.

The invention discloses a self-rectification memristor based on a hafnium zirconium oxide / tellurium oxide heterojunction and preparation and application of the self-rectification memristor, tellurium dioxide is used as an evaporation source, a TiN / HZO substrate is placed in vacuum evaporation equipment for evaporation of a tellurium dioxide film, finally, a metal electrode is evaporated on the tellurium dioxide film, and air annealing is performed to obtain the self-rectification memristor. According to the present invention, the material has characteristics of good switching characteristic, good cycle stability, excellent self-rectification characteristic and broad spectrum response, and can be used in storage devices, coded locks, light response detectors, light synapses, multi-mode neuromorphic calculation units and other related aspects by using the characteristics.

This invention provides an activation solution for activating cadmium telluride thin films and its application in the preparation of cadmium telluride thin-film solar cells. The activation solution uses tellurium tetrachloride and cadmium perchlorate hydrate as additives added to an aqueous solution of cadmium chloride. Tellurium tetrachloride generates tellurium dioxide and further tellsurium, which remains on the surface of the cadmium telluride, forming a tellurium-rich layer. Cadmium perchlorate or its hydrate acts as a dispersant, preventing the aggregation of tellurium dioxide and tellurium generated by tellurium tetrachloride, thus promoting the formation of a uniform tellurium-rich layer. Furthermore, cadmium perchlorate hydrate can decompose into cadmium chloride, which can also be used as an activation material. When this activation solution is used in the preparation of cadmium telluride thin-film solar cells, no residual chlorine atoms are detected in the activated cadmium telluride film, and acid etching is unnecessary. A tellurium-rich layer is formed on the crystal surface, and the resulting cadmium telluride solar cell chip achieves a power generation efficiency of 18.5%.

A vacuum insulating panel may include: a first substrate; a second substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at a pressure less than atmospheric pressure; a seal provided between at least the first substrate and the second substrate, the seal comprising a first seal layer; wherein the first seal layer comprises tellurium oxide and vanadium oxide; wherein the first seal layer comprises, on a wt. %, more tellurium oxide than vanadium oxide, and has a density of from about 2.8-4.0 g / cm3.

The application relates to a heterojunction PdTe / Bi2Te3 nanometer plate electrocatalyst and a preparation method and application thereof, and the preparation method comprises the following steps: uniformly mixing a palladium salt and hydrochloric acid according to a molar ratio of 1:2 to obtain a palladium precursor solution; weighing polyvinylpyrrolidone K-30, bismuth oxide, tellurium dioxide and sodium hydroxide, placing them in ethylene glycol, stirring and dissolving at 50-90 DEG C, transferring into a polytetrafluoroethylene reaction kettle, placing into a constant-temperature air drying oven, reacting at 200-230 DEG C to obtain a product, washing the product, centrifugally separating to obtain a sample, dispersing the sample in deionized water to obtain a bismuth telluride solution; dispersing the bismuth telluride solution in deionized water, adding the palladium precursor solution at room temperature, stirring and reacting, alternately washing with anhydrous ethanol and deionized water, centrifugally separating and vacuum drying to prepare the heterojunction PdTe / Bi2Te3 nanometer plate electrocatalyst. The application has the advantages of simple process, easy operation, good repeatability, easy control of product morphology and size, and great potential in industrial production.

One embodiment of a ternary inverter is provided. The ternary inverter comprises a gate electrode. The gate electrode overlaps with a first tellurium oxide layer in a P-type transistor area. An n-type oxide semiconductor layer and a second tellurium oxide layer, which form a PN junction overlapping with the gate electrode, are arranged in a heterojunction transistor area. A high dielectric constant gate insulating film is arranged between the gate electrode and the first tellurium oxide layer, between the gate electrode and the n-type oxide semiconductor layer, and between the gate electrode and the second tellurium oxide layer. A first electrode connected to the first tellurium oxide layer, a second electrode connected to both the first tellurium oxide layer and the second tellurium oxide layer, and a third electrode connected to the n-type oxide semiconductor layer are arranged.

The invention discloses a tellurium dioxide crystal birefringence light filter, which comprises a plurality of stages of Lyot light filtering units, each stage of Lyot light filtering unit sequentially comprises a polaroid P1, a tellurium dioxide crystal T1, a 1 / 2 wave plate W1, a tellurium dioxide crystal T2, a 1 / 4 wave plate W2, a 1 / 2 wave plate W3 and a polaroid P2, the plurality of stages of Lyot light filtering units are arranged in a crystal holder, a rotating piece is arranged on the crystal holder, and the rotating piece is arranged on the crystal holder. The 1 / 2 wave plate W3 of each level of Lyot light filtering unit is installed on a rotating piece, the optical axis direction of the 1 / 2 wave plate W3 is changed through rotation of the rotating piece, and the birefringence light filter with the caliber larger than 50 mm is achieved through the birefringence characteristic of tellurium dioxide. According to the invention, the artificial crystal tellurium dioxide is used as the birefringent crystal, so that the problem that a large aperture cannot be obtained by the existing optical filter technology based on natural crystal Iceland spar can be solved; according to the invention, the birefringent optical filter with the caliber larger than 50 mm can be realized.

The invention belongs to the technical field of non-ferrous metal metallurgy, and relates to a treatment method of tellurium electrodeposition waste liquid. The method comprises the following steps: 1, filtering the tellurium electrodeposition waste liquid to remove suspended solids in the tellurium electrodeposition waste liquid; 2, sodium hydroxide is added into the filtered tellurium electrodeposition waste liquid to be dissolved. Step 3, adding tellurium dioxide into the solution obtained in the step 2, and dissolving; and filtering after removing impurities to obtain a new electrodeposition solution. According to the method, the neutralization step is reduced, the residual alkali in the tellurium electrodeposition waste liquid is effectively utilized, and the consumption of sodium hydroxide is greatly reduced.

A method of manufacturing a vacuum insulated glass unit, the method including providing a glass sheet assembly having a first and second glass sheets including inner major surfaces facing each other, support structures positioned therebetween, an edge seal including first and second seal layers in contact with each other, the edge seal being arranged at a peripheral edge so as to enclose a gap between the first and second glass sheets, where the edge seal includes edge seal material that has been outgassed in a heating step, and a getter arranged in the gap, where the method further includes re-heating the edge seal by means of an infrared laser so as to soften the edge seal, and evacuating and sealing the gap, where at least one of the first and second glass sheets includes a low-emission coating, and wherein the edge seal includes tellurium oxide, vanadium oxide, and bismuth oxide.

The invention relates to conductive paste and application thereof. The conductive paste comprises the following components: 80-91 wt% of silver powder, 1.0-7.0 wt% of a glass powder system and 5-20 wt% of an organic system, the glass powder system comprises silicate glass, vanadate glass and metal oxides, the silicate glass at least comprises 10%-40% of lead fluoride and 3%-25% of tungsten oxide, the vanadate glass at least comprises 10%-50% of vanadium pentoxide and 15%-35% of bismuth oxide, and the metal oxides at least comprise 10%-40% of tellurium oxide and 1%-15% of copper oxide. The conductive paste can solve the problem that good contact cannot be formed under a thinned poly layer.

Tellurium oxide and a thin film transistor comprising the same as a channel layer are provided. The tellurium oxide is a metal oxide including tellurium, wherein a portion of the tellurium is in a Te0 state having a zero oxidation number, and another portion of the tellurium is in a Te4+ state having a tetravalent oxidation number.

The present invention provides a sealing material and a multilayer glass panel using the same. A multilayer glass panel with high reliability and a sealing material for achieving the same are provided. A sealing material, comprising: a lead-free low-melting glass particle containing vanadium oxide and tellurium oxide, a low-thermal expansion filler particle, and a glass bead as solid components, the volume content of the glass bead in the solid components being 10% or more and 35% or less, the volume content of the lead-free low-melting glass particle in the solid components being greater than the volume content of the low-thermal expansion filler in the solid components.

The invention discloses a method for recovering antimony and tellurium through combined treatment of lead anode mud and red mud, and relates to the technical field of secondary resource recovery and cyclic utilization. The method comprises the following steps that lead anode slime is dried and then placed in a reaction device to be subjected to vacuum distillation, and arsenic-antimony volatile matter and lead-bismuth alloy are obtained; adding red mud into the arsenic-antimony volatile matter to form a solid mixture, then adding water into the solid mixture to form a solid-liquid mixture, stirring the solid-liquid mixture for constant-temperature leaching, and filtering the solid-liquid mixture subjected to constant-temperature leaching to obtain arsenic-antimony filter residues and tellurium-containing filtrate; adding alkali into the tellurium-containing filtrate to enable the tellurium-containing filtrate to generate precipitate, and filtering the precipitate to obtain solid tellurium dioxide; the arsenic and antimony filter residues are placed in a reaction device for vacuum distillation, and antimony trioxide and solid arsenic residues are obtained. In the recovery process, the tellurium and antimony content and the recovery rate are high, efficient tellurium and antimony recovery of the lead anode mud and harmless treatment of the red mud are facilitated, and the method is suitable for lead metallurgy and aluminum industry solid waste co-treatment and valuable metal recovery.