146 results about "Tellurium oxide" patented technology

The present invention provides a thick-film paste for printing the front-side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-oxide dispersed in an organic medium.

A conductive paste for forming a solar cell electrode, including: a conductive powder containing silver as a main component; glass frit; and an organic vehicle, wherein the glass frit contains tellurium glass frit having tellurium oxide as a network-forming component. The conductive paste of the present invention makes it possible to form a solar cell electrode having a low dependence on firing temperature without causing problems due to fire-through into the substrate, and to thereby obtain a solar cell having good solar cell characteristics.

The present invention discloses a conductive paste for solar cell, including the following composition: silver particle and two glass frits. A glass frit (I) comprises bismuth oxide, tellurium oxide, tungsten oxide, silicon oxide, and zinc oxide; and a glass frit (II) comprises lead oxide, tellurium oxide, and zinc oxide. The conductive paste is utilized to form the electrode of the substrate for solar cell to enhance the performance of Ohmic contact, fill factor and conversion efficiency of the solar cell, after sintering.

The present invention discloses a conductive paste for solar cell, including the following composition: silver particle and two glass frits. A glass frit (I) comprises bismuth oxide, tellurium oxide, tungsten oxide, silicon oxide, and zinc oxide; and a glass frit (II) comprises lead oxide, tellurium oxide, and zinc oxide. The conductive paste is utilized to form the electrode of the substrate for solar cell to enhance the performance of Ohmic contact, fill factor and conversion efficiency of the solar cell, after sintering.

The present invention relates to an inorganic reaction system used in the manufacture of electroconductive pastes. The inorganic reaction system comprises a lead containing matrix forming composition and a tellurium oxide additive. Preferably the lead containing matrix forming composition is between 5-95 wt. % of the inorganic reaction system, and the tellurium oxide additive is between 5-95 wt. % of the inorganic reaction system. The lead containing matrix forming composition may be a glass frit, and may comprise lead oxide. Another aspect of the present invention relates to an electroconductive paste composition that comprises metallic particles, an inorganic reaction system as previously disclosed, and an organic vehicle. Another aspect of the present invention relates to an organic vehicle that comprises one or more of a binder, a surfactant, a solvent, and a thixatropic agent. Another aspect of the present invention relates to a solar cell printed with an electroconductive paste composition as disclosed, as well as an assembled solar cell module. Another aspect of the present invention relates to a method of producing a solar cell.

The invention discloses a method for recovering tellurium from high-tellurium residues in an efficient and environment-friendly mode. The method includes the steps of breaking the high-tellurium residues, slowly adding hydrochloric acid and hydrogen peroxide into the high-tellurium residues, controlling the temperature and continuously stirring to carry out oxidizing leaching; carrying out liquid-solid separation after the residues are completely dissolved, wherein tellurium oxide as the major element enters leaching solutions, valuable metal such as Pb and Ag enters leaching residues in the mode of chloride salt, and lead and silver residues return to a lead smelting system to recover the valuable metal; and adjusting the pH value of the tellurium-containing leaching solutions to be 5.0-6.0 through sodium hydroxide solutions, obtaining TeO2 sediments, carrying out liquid preparation after TeO2 is roasted and nitrate is removed and returning to the electrodeposition process to directly recover the tellurium. According to the method, the high-tellurium residues is directly leached to recover the tellurium through the hydrochloric acid and the hydrogen peroxide, the direct recovery rate of the tellurium can reach above 95%, so that efficient recovery of the tellurium is realized, the recovery rate of silver can reach above 99.0%, and the recovery rate of lead can reach above 97.6%. The method has the advantages that the technological processes are simple, needed equipment is reduced, the production cost is low, the environment friendliness is high and the comprehensive recovery degree is high, thereby having wide application prospects.

The invention discloses a method for removing tellurium from crude selenium slag. The method comprises the following steps: an oxidizing agent is added to the crude selenium slag and stirred, a primary product is obtained after tellurium in the crude selenium slag is subjected to a reaction with the oxidizing agent, vacuum distillation is performed on the primary product to enable selenium in theselenium slag to be volatilized while tellurium is not volatilized, and a selenium product with low tellurium content is obtained by recovery. The oxidizing agent is added to the crude selenium slag and subjected to an oxidation reaction with tellurium in the crude selenium slag, and accordingly, form of tellurium is changed; based on the property difference between tellurium oxide in the changedform and selenium in a vacuum state, tellurium is removed from selenium by vacuum distillation, content of tellurium in selenium is reduced, and the selenium product with purity higher than 99.9% is obtained.

The invention discloses lead-free sealing glass, a sealing device and a production method of the lead-free sealing glass and aims to provide sealing glass which contains no lead and has lower expansion coefficient. The lead-free sealing glass is at least prepared from, in percentage by weight, 15%-60% of bismuth oxide, 10%-30% of vanadium oxide, 5%-30% of tungsten oxide, 5%-30% of tellurium oxide,5%-30% of zinc oxide and 1%-10% of boron oxide through mixing and melting.

The invention relates to a glass frit, a composition for solar cell electrodes including the same, and an electrode fabricated using the same. The glass frit includes at least three metal oxides selected from the group of lead oxide, silicon oxide, tellurium oxide, bismuth oxide, zinc oxide, and tungsten oxide, wherein the glass frit exhibits a phase transition peak in the range of about 300 DEG C. to about 600 DEG C. on a cooling curve obtained via an TG-DTA analysis while a mixture of the glass frit and silver powder, obtained by mixing the glass frit with the silver powder in a weight ratio of 1:1, is cooled at a cooling rate of 10 DEG C. / min, after heating the mixture to 850 DEG C. at a heating rate of 20 DEG C. / min and held there for a wait-time of 10 minutes.

The invention relates to an electronic component, production method therefor, and sealing material paste used therein. The electronic component has an organic member (3) between two transparent substrates (1, 2). The outer peripheral sections of the two transparent substrates (1, 2) are bonded using a sealing material (5) that comprises low-melting-point glass. The low-melting-point glass comprises vanadium oxide (V2O5), tellurium oxide (TeO2), phosphorus oxide (P2O5), and iron oxide (Fe2O3), and in terms of oxide content, corresponds to the following: V2O5+TeO2+P2O5+Fe2O3>=75 mass%, and V2O5>TeO2>P2O5>Fe2O3 (in mass%).

A radiation-emitting component includes a semiconductor chip and a conversion element. The semiconductor chip includes an active layer suitable for generating electromagnetic radiation and a radiation exit face. The conversion element includes a matrix material and a luminescent material. The conversion element is arranged downstream of the radiation exit face of the semiconductor chip. The matrix material comprises at least 40 wt. % tellurium oxide and is free of boron trioxide and / or germanium oxide. A method for producing such a radiation-emitting component is furthermore stated.