87 results about "Tellurium oxide" patented technology

A vacuum insulating panel may include: a first substrate; a second substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at pressure less than atmospheric pressure; a pump-out / evacuation tube extending at least partly into an aperture in one of the substrates; and a pump-out / evacuation tube seal. The pump-out / evacuation tube seal may include at least one of: (a) from about 20-80 wt. % tellurium oxide, the tellurium oxide comprising TeO4 and TeO3, wherein the pump-out tube seal comprises more TeO3 than TeO4 by wt. %; and / or (b) tellurium oxide and from about 10-50 wt. % vanadium oxide, wherein the pump-out tube seal by wt. % comprises more tellurium oxide than vanadium oxide, and wherein the vanadium oxide comprises VO2 and V2O5, and wherein more V in the pump-out tube seal is in a form of VO2 than V2O5. A substantially donut-shaped laser beam may be used to heat pump-out tube material in order to form a pump-out tube seal.

A vacuum insulating panel may include: a first substrate; a second substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at a pressure less than atmospheric pressure; a seal provided between at least the first substrate and the second substrate, the seal comprising a first seal layer; wherein the first seal layer comprises tellurium oxide and vanadium oxide; wherein the first seal layer comprises, on a wt. %, more tellurium oxide than vanadium oxide, and has a density of from about 2.8-4.0 g / cm3.

The invention discloses a P-type tellurium oxide thin film field effect transistor and a preparation method thereof. The transistor is provided with a bottom gate top contact structure. The preparation method comprises the following steps: firstly, cleaning the silicon / silicon dioxide substrate, then depositing a tellurium oxide film as the semiconductor active layer by using a metal mask and an electron beam evaporation method, and finally preparing a layer of nickel with the thickness of about 50nm on the active layer by using the mask to serve as the source electrode and the drain electrode. Compared with a traditional tellurium oxide transistor, the tellurium oxide transistor prepared by the method has the advantages that the carrier mobility and the switching ratio are obviously improved, and the hysteresis effect can be ignored. The electrical performance of the tellurium oxide transistor with the bottom gate top contact structure is improved, and the tellurium oxide transistor has the advantages of being low in cost and simple in process step.

Disclosed are a semiconductor comprising amorphous tellurium oxide, thin film transistor and method of fabricating same. In detail, a semiconductor comprising a chalcogen atom comprising at least one selected from the group consisting of a sulfur atom (S) and a selenium atom (Se); and tellurium composite comprising a tellurium (Te) atom and tellurium oxide. A thin film transistor (TFT) fabricated based on the TeOx channel layer according to the present disclosure exhibits excellent output / transfer characteristics and superior electrical performance with high hole field-effect mobility and a high on / off current ratio of ~107.

A vacuum insulating panel includes may include: a first substrate; a second substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at a pressure less than atmospheric pressure; a seal provided between at least the first and second substrates, the seal comprising a first seal layer and / or a second seal layer; and wherein the first seal layer may include from about 20-80 wt. % tellurium oxide, the tellurium oxide comprising TeO4 and TeO3, and wherein the first seal layer comprises more TeO3 than TeO4 by wt. %.

Disclosed are a semiconductor comprising amorphous tellurium oxide, thin film transistor and method of fabricating same. In detail, a semiconductor comprising a chalcogen atom comprising at least one selected from the group consisting of a sulfur atom (S) and a selenium atom (Se); and tellurium composite comprising a tellurium (Te) atom and tellurium oxide. A thin film transistor (TFT) fabricated based on the TeOx channel layer according to the present disclosure exhibits excellent output / transfer characteristics and superior electrical performance with high hole field-effect mobility and a high on / off current ratio of ˜107.

The invention belongs to the technical field of low-dimensional material preparation, and particularly relates to a preparation method of a Bi2O2Te nanosheet. According to the preparation method, a chemical vapor deposition method is adopted, Bi2Te3 is taken as a precursor, a substrate is placed above the precursor, the precursor is heated for reaction under the condition that carrier gas is introduced, the carrier gas comprises oxygen and inert gas, the heating temperature is 550-660 DEG C, and the Bi2O2Te nanosheet grows on the surface of the substrate. The growth uniformity and the crystallization quality of the Bi2O2Te nanosheet prepared by the method provided by the invention are remarkably improved, a single crystal nanosheet with a larger size can be obtained, and the electrical and thermal properties of the Bi2O2Te nanosheet are remarkably improved; meanwhile, the growth temperature is low, energy consumption and equipment loss are reduced, and the method is more suitable for industrial application.

The utility model relates to a device for producing tellurium powder by using tellurium dioxide, and belongs to the technical field of tellurium powder production equipment. Comprising a leaching kettle, a plate-and-frame filter press, a primary reduction kettle, a primary reduction filter barrel, a secondary reduction kettle, a secondary reduction filter barrel and a waste liquid tank which are sequentially connected, materials in the leaching kettle are conveyed into the plate-and-frame filter press through a first conveying pump, and the leaching kettle is further connected with a hydrochloric acid storage tank through a pipeline; the opening of the primary reduction kettle is positioned right above the primary reduction filter barrel, and the primary reduction kettle is also connected with a sulfur dioxide steel cylinder; materials in the primary reduction filter barrel are conveyed into a secondary reduction kettle through a second conveying pump; an outlet of the secondary reduction kettle is positioned right above the secondary reduction filter barrel, and the secondary reduction kettle is also connected with a sulfur dioxide steel cylinder; materials of the secondary reduction filter barrel are input into the waste liquid tank through a third conveying pump; the tellurium dioxide is produced by adopting the method, the technological operation is simple, the production efficiency is high, the tellurium content of the liquid after secondary reduction is low, the liquid can be reused in a leaching kettle, and the use amount of hydrochloric acid is reduced.

The invention discloses a preparation method of silver-coated copper slurry suitable for TOPCON, and relates to the technical field of battery preparation, and the preparation method comprises the following steps: preparing silver-coated copper particles; silver-coated copper particles are mixed with a glass system, an organic system and nanoscale silver particles according to the mass ratio to prepare silver-coated copper slurry; the silver-coated copper particles sequentially comprise a copper core, an aluminum oxide protection layer, a nickel layer and a nano-silver coating layer from inside to outside, and the silver-coated copper slurry is formed by mixing the silver-coated copper particles, a glass system, an organic system and nano-scale silver particles according to a mass ratio. The glass system is composed of bismuth oxide-boric oxide composite glass, zinc oxide-silicon oxide composite glass and tellurium oxide glass. According to the invention, the silver-coated copper particles with a multi-layer coating structure are used as a main conductive phase and are combined with the nano-silver particles, so that the conductive performance is ensured, the raw material cost of the paste is reduced, the cost pressure is dealt with, the problems of copper core oxidation and ion migration are solved, and the paste can be kept stable in a high-temperature and high-humidity environment.

The application discloses a method for preparing high-purity tellurium dioxide powder from waste tellurium dioxide target material, comprising the following steps: step one, crushing the waste tellurium dioxide target material to obtain tellurium dioxide pre-crushed material; step two, ball-milling the tellurium dioxide pre-crushed material and drying to obtain tellurium dioxide powder; and step three, purifying the tellurium dioxide powder to obtain high-purity tellurium dioxide powder. 131 The application solves the problems of traditional powderization process, such as serious powder agglomeration, wide particle size distribution, easy introduction of impurities and poor industrial applicability, and the prepared powder can be directly applied to the production of tellurium dioxide target material, and the method can also be applied to the preparation of tellurium dioxide single crystal, infrared acousto-optic devices and electronic component materials, and has excellent industrial application prospect.

A photo-rechargeable metal tellurium oxide alkali-ion battery containing a semiconductor photocatalyst that is capable of (i) carrying an electrical load while being photo-charged, and (ii) carrying an electrical load subsequent to the termination of light radiation, wherein the battery includes: electrodes having an anode and a cathode, wherein the cathode includes a photocatalyst and the anode an alkali metal; an external electrical circuit that allows electrons to pass externally between the electrodes for charging and to drive an electrical load during discharging; an electrolyte for facilitating the conduction of ions between the electrodes, for supporting chemical reactions occurring at the electrodes, and for maintaining charge neutrality within the battery; a semi-permeable barrier between the electrodes for allowing ions within the electrolyte to pass between the electrodes; and a photo-induced potential bias across the external electrical circuit for driving electrons, when light radiation is incident on the cathode, to flow between the electrodes in a certain direction via the external electrical circuit, and wherein the photocatalyst is a metal tellurium oxide having a layered structure, capable of having its electrons excited from its valence band to its conduction band upon incident light radiation; positive holes within the layered structure associated with such photo-induced excitation are stabilised by storing ions from the electrolyte and / or anode within the layered structure; and, subsequent to the termination of incident light radiation on the cathode, the stabilised alkali metal ions stored within the layered structure are oxidised allowing the alkali metal ions to return to the electrolyte and / or anode, and the electrons associated with the returned ions are released into the external electrical circuit to form an oxidative current that drives an electrical load.

The invention relates to the technical field of beta-Ga2O3 crystal material growth, in particular to a fluxing agent of a beta-Ga2O3 crystal and a preparation method of a single crystal X-ray detector of the fluxing agent. A fluxing agent for growing the beta-Ga2O3 crystal comprises tellurium oxide and divalent alkaline earth metal carbonate. Uniformly mixing gallium oxide and a fluxing agent to obtain a mixed material; transferring the mixed material into a crystal growth furnace, and heating to melt the mixed material to obtain a melt; and cooling the melt to 0.5-3 DEG C above the saturation point temperature, putting a seed crystal into the melt, cooling to enable the crystal to grow, taking out the crystal after the growth is finished, and cooling to room temperature to obtain the beta-Ga2O3 crystal. The fluxing agent provided by the invention does not contain toxic components such as lead, fluorine and the like, the crystal growth temperature range of the fluxing agent is approximately 780-850 DEG C, the growth temperature of the crystal is effectively reduced, the volatilization of a melt at a high temperature is reduced, the deviation and viscosity of solution components are reduced, the corrosion to a platinum crucible is reduced, and the beta-Ga2O3 crystal with high quality and large size is easy to obtain.

A vacuum insulating panel may include: a first glass substrate; a second glass substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at a pressure less than atmospheric pressure; 5 and a seal (e.g., edge seal and / or pump-out tube seal) having at least a first seal layer. In order to form a layer of the seal, a glass may be provided such as in a paste which may also include filler, binder and / or solvent, or in a pressed preform which may also include filler. The glass (e.g., the glass, such as glass powder, present in a paste before firing) for 10 use in forming the seal layer may include tellurium oxide and may be designed to have little or no aluminum oxide and / or little or no zinc oxide.

This invention discloses a short-process purification method for tellurium from crude tellurium. The process first involves washing the crude tellurium with water to achieve liquid-solid separation, yielding washed crude tellurium. The washed crude tellurium is then subjected to pyrometallurgical oxidation to obtain tellurium oxide slag. This tellurium oxide slag is then leached to obtain a tellurium leachate. The tellurium leachate is subsequently subjected to electrowinning and casting processes to complete the tellurium purification. The advantages of this invention are: a short process flow, high yield, low chemical usage, and low cost. By combining pyrometallurgical and hydrometallurgical methods, crude tellurium is converted into 4N refined tellurium, effectively shortening the refined tellurium smelting process, reducing intermediate products, and increasing the tellurium yield to over 95%.

A method for manufacturing a tellurium-based semiconductor device comprises the steps of: preparing a substrate; depositing, on the substrate, a tellurium-based semiconductor material including tellurium and a tellurium oxide so as to form a tellurium-based semiconductor layer; and forming a passivation layer on the tellurium-based semiconductor layer. According to the manufacturing method, heat treatment at a high temperature or cryogenic conditions are not required, and thus, it is possible to manufacture a semiconductor device through a practical process. In addition, since the crystallinity of the tellurium-based semiconductor layer is improved during the manufacturing process, it is possible to provide a p-type semiconductor device having excellent electrical characteristics such as electric field mobility and a current blink ratio.

A vacuum insulating panel may include: a first glass substrate; a second glass substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at a pressure less than atmospheric pressure; and a seal having at least a first seal layer provided between at least the first and second substrates. The first seal layer and / or a tube seal of the panel may be designed to have an increased density. In order to form a layer of the seal for the edge seal and / or tube seal, a glass composition may be provided such as in a paste which may also include filler, binder and / or solvent. The glass composition (e.g., the glass, such as glass powder, present in a paste before firing) for use in forming the seal layer may include tellurium oxide, bismuth oxide, and optionally vanadium oxide, and may be designed to increase the density of the seal layer.

The invention relates to a Co3TeO6 single crystal growth method, which comprises: S1, fully grinding anhydrous sodium carbonate, cobaltosic oxide and tellurium dioxide as raw materials in a mortar, placing into an alumina crucible, and sintering at a high temperature of 850 DEG C to obtain a precursor Na2Co2TeO6 powder; s2, the precursor powder obtained in the step S1 and molybdenum trioxide are weighed according to the mass ratio of 2: 1, ground and transferred to an aluminum oxide crucible; and S3, sealing the crucible in the step S2 with high-temperature cement, putting the crucible in a muffle furnace, raising the temperature to 980 DEG C at a speed of 5 DEG C / min in a first temperature zone, preserving heat for 6 hours at a speed of 980 DEG C in a second temperature zone, reducing the temperature from 980 DEG C to 730 DEG C at a speed of 50 hours in a third temperature zone, and reducing the temperature to room temperature at a speed of 5 DEG C / min in a fourth temperature zone, so as to obtain the centimeter-level high-quality Co3TeO6 single crystal. The preparation method of the Co3TeO6 single crystal provided by the invention has the advantages of low cost, easiness in operation and stable product phase. The Co3TeO6 single crystal material can be used for manufacturing magnetic devices and magnetic materials, manufacturing high-performance optical devices and electronic devices, and also can be used as an electrode material of a lithium ion battery.

The invention relates to a method for preparing 4N refined tellurium by comprehensively utilizing tellurium anode slime. The method comprises the following steps: S1, drying and ball-milling the tellurium anode slime; s2, water is added into the tellurium anode slime obtained after drying and ball milling for preheating so that the tellurium anode slime can be pulpified, and then solid sodium chloride and concentrated sulfuric acid are sequentially added for stirring and leaching; slowly adding ammonium sulfate into the leachate; and after the reaction is completed, adjusting the temperature and pH of the system to obtain the electrolyte. S3, the electrolyte is fed into a circulating electrolytic bath for selective reduction removal of main impurities, then solid-liquid separation is conducted after filtering is conducted through a ceramic membrane, and the purified electrolyte is obtained; s4, adjusting the potential of the purified electrolyte for electrolysis, and generating tellurium dioxide precipitate through hydrolysis; s5, washing, filtering and vacuum drying the tellurium dioxide precipitate, and cooling to room temperature to obtain high-quality tellurium dioxide; and S6, dissolving tellurium dioxide in a sodium hydroxide solution, and directly preparing 4N refined tellurium with the tellurium content being greater than or equal to 99.995% by adopting an electrodeposition process. The method is simple, efficient and low in cost.

The conductive paste provided by this invention comprises a conductive metal, lead-free glass powder, and an organic binder. The conductive metal and the lead-free glass powder constitute the total solids content, wherein the content of the conductive metal in the total solids content is 75-99.8 wt%, and the content of the lead-free glass powder is 0.2-25 wt%. The lead-free glass powder is a Te-Bi oxide system, which includes tellurium oxide and bismuth oxide. Tellurium oxide, as a glass network former, mainly determines the softening point and fluidity of the glass, effectively reducing the melting point and imparting good fluidity. Bismuth oxide, as a network modifier, can regulate the chemical activity of the glass, allowing it to moderately corrode the passivation layer during sintering and promoting the formation of silver-silicon ohmic contacts. Adjusting the ratio of the two within this range allows for precise matching of the sintering temperature curves of different crystalline silicon solar cells, broadening the process window for lead-free glass. Furthermore, this invention also provides a method for preparing the conductive paste.

A vacuum insulated glass (VIG) unit, and a window having the same, the VIG unit including paired glass sheets separated by support structures maintaining a gap between the paired glass sheets, a dense edge sealing peripherally arranged creating a sealed cavity between the paired glass sheets, a getter placed in the gap between the glass sheets, where the pressure in the sealed cavity is no higher than 0.001 mbar, where at least one of the first glass sheet and the second glass sheet includes a low-emission coating, where the edge sealing is made from low temperature glass frit powder material, and includes less than 0.1 wt % lead, less than 1 wt % solvent and less than 1 wt % binder, where gaseous inclusions in the edge sealing constitutes less than 5% of the total volume, and where the glass frit powder material includes tellurium oxide and vanadium oxide.

Provided are tellurium oxide and a thin film transistor including the tellurium oxide as a channel layer. Tellurium oxide is a metal oxide including tellurium, wherein a portion of the tellurium is in a Te2O3 state having an oxidation number of 0. 0 state, while the other part of tellurium is in Te with oxidation number 4 4+ state.

To provide a sealing material containing a glass composition which contains neither lead oxide nor vanadium oxide, can be fluidized by firing at a low temperature, and is excellent in acid resistance of a fired body.SOLUTION: A sealing material comprising a tellurium oxide-based glass composition substantially free of any of lead oxides and vanadium oxides, wherein the tellurium oxide-based glass composition comprises, as represented by mol% in terms of oxides, 44 to 70% of TeO2, 2 to 25% of Nb2O5, 3 to 20% of ZnO, and 0 to 15% in total of one or more of MgO, CaO, SrO, and BaO.SELECTED DRAWING: None

A vacuum insulating panel may include: a first substrate; a second substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at pressure less than atmospheric pressure; a pump-out / evacuation tube extending at least partly into an aperture in one of the substrates; and a pump-out / evacuation tube seal. The pump-out / evacuation tube seal may include at least one of: (a) from about 20-80 wt. % tellurium oxide, the tellurium oxide comprising TeO4 and TeO3, wherein the pump-out tube seal comprises more TeO3 than TeO4 by wt. %; and / or (b) tellurium oxide and from about 10-50 wt. % vanadium oxide, wherein the pump-out tube seal by wt. % comprises more tellurium oxide than vanadium oxide, and wherein the vanadium oxide comprises VO2 and V2O5, and wherein more V in the pump-out tube seal is in a form of VO2 than V2O5. A substantially donut-shaped laser beam may be used to heat pump-out tube material in order to form a pump-out tube seal.

Glass compositions include boron oxide (B2O3), lanthanum oxide (La2O3), tungsten oxide (WO3) and zirconia (ZrO2) as components and may optionally include niobia (Nb2O5), titania (TiO2), bismuth oxide (Bi2O3), yttria (Y2O3), tellurium oxide (TeO2), SiO2, PbO and other components. The glasses may be characterized by high refractive index at 587.56 nm and low density at room temperature relative to known glasses.

The invention discloses a method for separating and purifying tellurium from casting slag through multi-property synergistic reduction. The method comprises the following steps that the casting slag is subjected to ball milling; uniformly mixing the casting slag powder with a carbon-sulfur dual-function synergistic reducing agent; placing in a vacuum reaction device, carrying out a multi-property synergistic reduction reaction, carrying out carbon thermal reduction deoxidation on the tellurium oxide, carrying out sulfuration volatilization on impurity elements, and collecting a volatile product to obtain crude tellurium; selective volatilization of impurities and recondensation purification of tellurium are achieved on the obtained crude tellurium under the conditions of different temperature zones and pressure intensities, and finally high-purity tellurium with the purity larger than or equal to 99.99 wt% is obtained. According to the method, high-purity tellurium with the purity larger than 99.99% is prepared through efficient separation and purification from the casting slag, efficient resource recovery and protection of solid waste residues in the metallurgical process can be synchronously achieved, the casting slag is fully utilized, the whole process is easy to operate, no secondary oxidizing slag is generated, and a new thought is provided for resource recovery of the casting slag and high-purity preparation of tellurium.

A semiconductor device may include a substrate, source / drain electrodes on the substrate, a channel layer on the source / drain electrodes, a barrier film on the channel layer, a gate electrode on the barrier film, and an intermediate layer between a corresponding one of the source / drain electrodes and the channel layer, the intermediate layer including metal oxide, wherein the channel layer may include an oxide semiconductor material, and the oxide semiconductor material may include tellurium (Te) oxide and one or more oxides of sulfur (S) or selenium (Se).

The application provides a method for efficiently removing impurity tellurium in crude selenium, and relates to the field of dispersed metal purification technology.The method comprises the following steps: adding SeO2 into crude selenium raw material which is soluble with tellurium, and melting, so as to selectively oxidize elemental tellurium in the crude selenium melt; and then, by virtue of the difference between the saturated vapor pressures of oxidized tellurium and selenium, the impurity tellurium in the crude selenium can be efficiently removed through vacuum distillation treatment, the tellurium is enriched in the form of oxidized tellurium in the distillation residue, and selenium products with a certain purity are obtained in the volatile matter. By using the method, the recovery rate of selenium can reach more than 90%, the added SeO2 in the crude selenium is reduced to elemental selenium by tellurium, the residual SeO2 in the reaction is volatilized in the melting process, and no other impurities are introduced, so that an innovative method for the purification of selenium is provided. The method is simple, efficient, energy-saving and environment-friendly, and low in cost, and has a milestone significance in the field of selenium-tellurium separation.

The present invention discloses a preparation method of β-phase tellurium oxide nanosheet materials, belonging to the field of new electronic materials. The preparation method includes: spreading tellurium powder flat at one end of a quartz boat, then taking a clean silicon substrate and covering it above the tellurium powder without contacting the tellurium powder, sending the quartz boat into the center of a high-temperature vacuum annealing furnace, introducing oxygen, reacting under the conditions of 460-500 °C and 0.05-0.15 Mpa in an oxygen atmosphere, cooling to room temperature after completion, and obtaining a white product on the silicon substrate, which is the β-phase tellurium oxide nanosheet material. Compared with the prior art, the preparation method of the present invention is simple, low in cost, the prepared β-phase tellurium oxide nanosheet material has a good nano-morphology, strong bonding firmness with the substrate and high stability, and has good application prospects in the development of future transparent electronics, optoelectronic devices and energy-saving displays.

The invention belongs to the field of chemical industry, relates to a tellurium dioxide preparation technology, and provides a 4N-grade tellurium dioxide preparation method which comprises the following steps: adding tellurium hexafluoride gas into an alkaline solution for hydrolysis reaction to obtain a tellurate suspension, and filtering and drying the tellurate suspension to obtain a tellurate crude product; adding the tellurate crude product into a concentrated hydrochloric acid solution, stirring, dissolving and filtering to obtain a tellurium tetrachloride solution; dropwise adding stronger ammonia water into the tellurium tetrachloride solution until the pH value of the solution is 4-7, and filtering, washing and drying the reaction solution for multiple times to obtain a tellurium dioxide crude product; and calcining the tellurium dioxide crude product at 500-650 DEG C to obtain tellurium dioxide with the purity of more than 99.99%. The preparation method disclosed by the invention is mild in condition and easy to industrially amplify, tellurium hexafluoride can be quickly dissolved in ammonia water, the reaction rate is high, the production efficiency is high, and 4N-grade tellurium dioxide can be prepared.

The invention discloses a diversified alpha-phase tellurium oxide nano material as well as a preparation method and application thereof. The nano material is an alpha-phase tellurium oxide nano sheet, nano wire or nano broken line deposited on the surface of a substrate through a chemical vapor deposition method. The preparation method comprises the following steps: paving tellurium powder at the front end of a quartz boat, and placing a substrate above the powder; placing the quartz boat in a high-temperature rapid annealing furnace, carrying out a high-temperature reaction for 1-4 h in an oxygen atmosphere, carrying out a thermal evaporation process on the Te powder to convert the Te powder into gaseous Te molecules, and then carrying out a reaction on the gaseous Te molecules and oxygen to generate gaseous TeO2 molecules; and after the reaction is finished, cooling to room temperature, condensing TeO2 molecules on the surface of the substrate, growing various alpha-phase tellurium oxide nano structures on the substrate through CVD, and promoting the formation of TeO2 seed crystals by taking the substrate as a nucleation site. The obtained nano material has the characteristics of uniform size, regular shape, smooth surface and clear boundary, is firmly combined with the substrate, and has excellent stability; wide application prospects are shown in the fields of electronics, optics, energy industries and the like.