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Method for recovering tellurium from bismuth telluride base semiconductor refrigeration material

A bismuth telluride-based, semiconductor technology, applied in the field of tellurium recovery, can solve the problems of poor applicability and low recovery rate, and achieve the effects of strong applicability, high recovery rate, and easy scale-up

Inactive Publication Date: 2007-07-11
GUANGZHOU RES INST OF NON FERROUS METALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The recovery rate of this method is low, and the P-type and N-type materials need to be treated separately due to their different components, so the applicability is not strong

Method used

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  • Method for recovering tellurium from bismuth telluride base semiconductor refrigeration material

Examples

Experimental program
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Effect test

Embodiment 1

[0021] 100 g of P-type semiconductor refrigeration waste, with a tellurium mass content of 51%, was ball-milled to 0.15 mm for use. Add a mixture of 48g sodium hydroxide and 48g sodium carbonate to the crucible, melt to 650°C; add powdery materials, stir evenly, and alkali-melt for 0.5h; add 20g potassium nitrate in batches, stir the melt, and keep warm for 1h; take out the yellow matter Broken to 0.20mm; leaching with hot water at 95°C, the liquid-solid ratio of the first leaching is 6:1, the second leaching liquid-solid ratio is 3:1, and the time is 1.5h; neutralize the leachate with 3mol / L hydrochloric acid, the temperature is 50°C, The pH at the end of the reaction was controlled to be 6.0, and 55.55 g of white tellurium dioxide with a purity of 99.9% was obtained; the tellurium dioxide was dissolved with dilute lye to obtain a sodium tellurite solution, and electrowinning finally obtained 44.4 g of tellurium metal with a purity of 99.99%. The recovery rate of tellurium wa...

Embodiment 2

[0023] 150g of N-type semiconductor refrigeration bar stock, with a mass content of tellurium of 48%, was ball milled to 0.20mm for later use. Add a mixture of 131.3g sodium hydroxide and 56.2g sodium carbonate to the crucible, melt to 640°C; add powdery materials, stir evenly, and alkali-melt for 1 hour; add 37.5g sodium nitrate in batches, stir the melt, and keep warm for 1.5 hours; Take out the yellow matter and break it to 0.15mm; leaching with hot water at 90°C, liquid-solid ratio 4:1, time 1.5h; 3.6mol / L sulfuric acid to neutralize the leachate, temperature 70°C, control the reaction end pH to 6.0, 81.16g purity It is 99.8% white tellurium dioxide; dissolving tellurium dioxide with dilute lye to obtain sodium tellurite solution, and electrowinning to finally obtain 64.8g of metal tellurium with a purity of 99.97%, and the recovery rate of tellurium is 90.00%.

Embodiment 3

[0025] 120g of mixed semiconductor refrigeration waste, with a mass content of tellurium of 49%, was ball milled to 0.125mm for later use. Add 96g of sodium hydroxide to the crucible and melt to 660°C; add powdery materials, stir evenly, and alkali-melt for 0.5h; add 24g of sodium nitrate in batches, stir the melt, and keep warm for 2h; take out the yellow matter and break it to 0.20mm; Hot water leaching at 95°C, liquid-solid ratio 6:1, time 1.5h; 3mol / L hydrochloric acid to neutralize the leachate, temperature 50°C, control the pH of the reaction end point to 6.0, and obtain 67.05g of white tellurium dioxide with a purity of 99.8%; Tellurium dioxide was dissolved in dilute lye to obtain sodium tellurite solution, and electrowinning was performed to finally obtain 53.5 g of metallic tellurium with a purity of 99.99%, and the recovery rate of tellurium was 90.98%.

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Abstract

The invention discloses a recycling method of tellurium in the refrigeration material of bismuth telluride based semiconductor, which comprises the following steps: adding broken and grinded material into fused alkali metal hydroxide or compound of other alkali metal carbonate; proceeding alkali fusing at 640-720 deg. c; adding oxidant; leaching molten substance through water once or twice; neutralizing the leached solution through acid until the pH value is 5-6; obtaining tellurium dioxide; dissolving tellurium dioxide through alkali; obtaining sodium tellurate solution; electrodepositing to obtain the metal tellurium.

Description

technical field [0001] The invention relates to a method for recovering tellurium in a semiconductor refrigeration material, in particular to a method for recovering tellurium in a bismuth telluride-based semiconductor refrigeration material. Background technique [0002] Generally, bismuth telluride-based semiconductor refrigeration materials are used to manufacture general-cooled semiconductor refrigeration devices. In the manufacturing process of semiconductor refrigeration devices (especially general cold type), a large amount of P-type, N-type or mixed tellurium-containing waste materials will be produced, and the mass content of tellurium is 45-52%. In addition, there are also a large number of crystal grains in the expired semiconductor refrigeration devices that need to recover tellurium for reuse. With the rapid development of semiconductor refrigeration industry, there will be more and more tellurium-containing wastes, so the recovery of tellurium in semiconductor...

Claims

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Application Information

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IPC IPC(8): C01B19/00
Inventor 蒋玉思高远张建华程华月
Owner GUANGZHOU RES INST OF NON FERROUS METALS
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