A supporting substrate 11 and a light-transmitting layer 12, and further between the light-transmitting layer and the supporting substrate 11 a dielectric layer 31, a noble metal oxide layer 23, a dielectric layer 32, a light absorption layer 22 and a dielectric layer 33 in this arranging order when viewed from the light-transmitting layer side are provided. The light absorption layer 22 contains as a main component a material that can be represented by
(SbaTe1−a)1−bMAb
(wherein MA is an element other than antimony (Sb) and tellurium (Te), 0<a<1 and 0≦b<1), and besides, that is different from an intermetallic compound represented by
{(GeTe)c(Sb2Te3)1−c)}dMB1−d
(wherein MB is an element other than antimony (Sb), tellurium (Te) and germanium (Ge), c is ⅓, ½ or ⅔, and 0<d≦1).