84 results about "Bump bonding" patented technology

A semiconductor package includes a flip chip mounted on a plurality of leads and encapsulated by a molding compound. The upper surfaces of the leads includes a plurality of bump-bonding regions at the fan-in ends of the leads, and the lower surfaces of the leads include a plurality of outer connecting regions at the fan-out ends of the leads. A plurality of indentations are formed at the upper surfaces of the leads and adjacent to the corresponding bump-bonding regions so as to avoid solder contamination on the leads. After molding, the indentations are filled with the molding compound. Preferably, the indentations have a reversed “Ω”-shaped profile to prevent bumps of the flip chip from excessively wetting over the other portions of the leads to firmly fix the fan-in ends of the leads.

A semiconductor device, which is constituted in such a way that a pad portion of a logic chip is connected to an element region of a semiconductor chip with a bump bonding, is capable of achieving high speed operability of the elements, because delay of transmission of an electrical signal is suppressed a logic chip is directly connected to a DRAM, therefore, it is possible to suppress an increase of load capacitance caused by interconnects, and securing a wide bus width by a multiple pin connection. As a result, it becomes possible to enhance performance of the semiconductor device upon suppressing delay of information transmission from the logic chip to the DRAM.

An integrated circuit structure and a method for fabricating the structure. The method comprises forming a copper bond pad for attaching the integrated circuit to a package. Copper oxide is removed from the pad by reduction in a hydrogen ion atmosphere. For attaching the integrated circuit to a bump-bonding package an under-bump metallization layer is formed over the reduced copper pad and a solder bump formed thereover. The process can also be employed in a wire bonding process by forming an aluminum layer overlying the cleaned copper pad. The structure of the present invention comprises a copper pad formed in a substrate. A passivation layer defining an opening therein overlies the copper pad. A under-bump metallization layer is disposed in the opening and a solder bump overlies the metallization layer. Alternatively, the structure further comprises an aluminum pad disposed overlying the reduced copper pad.

A method of equalizing device heights on a chip includes providing on a first chip an array of first devices having a predetermined height including dummy devices with bonding bumps; engaging the bonding bumps on the first chip with those on the second chip; removing the dummy devices to create holes containing the double bumps previously associated with the dummy devices; providing on a third chip an array of second devices having a lower height than the first devices with bonding bumps which match those in the holes; and bump bonding the third chip to the second chip with the second devices in the holes and the bonding bumps on the second devices combining with the multiple bumps in the holes to equalize the height of the first and second devices.

A semiconductor die is solder bump-bonded to a leadframe or circuit board using solder balls having cores made of a material with a melting temperature higher than the melting temperature of the solder to ensure that in the finished structure the die is parallel to the leadframe or circuit board.

An solid state scanning system having a single crystal silicon deflection mirror and scanning mirror is integrated with a light source. Separation of the micro-electro-mechanical systems and light emitters on separate substrates allows the use of flip-chip and solder bump bonding techniques for mounting of the light sources. The separate substrates are subsequently full wafer bonded together to create an integrated solid state scanning system.

A microbeam interconnection method is provided to connect integrated circuit bond pads to substrate contacts. Conductive leads (microbeams) are releasably formed, by a process such as electroplating or vacuum deposition, over a release layer deposited on a ceramic, glass or similar carrier. The microbeam material adheres only very weakly to the release layer. After the inner ends of the microbeams have been bonded to IC bond pads, such as by flip chip bump bonding, and the integrated circuit has been fully tested, the IC is lifted away from the carrier, causing the microbeams to peel away from the release layer. After straightening the microbeams against a flat surface, the outer ends of the microbeams may then be bonded to contacts on an MCM or other substrate. The method permits full electrical testing at speed and high speed bonding. The method significantly reduces mechanical stresses in interconnect bonds and thereby improves integrated circuit reliability.

A first substrate having an array of emitters or detectors may be joined by bump bonding with a second substrate having read-in (RIIC) or read-out (ROIC) circuitry. After the two substrates are joined, the resulting assembly may be singulated to form sub-arrays such as tiles sub-arrays having pixel elements which may be arranged on a routing layer or carrier to form a larger array. Edge features of the tiles may provide for physical alignment, mechanical attachment and chip-to-chip communication. The pixel elements may be thermal emitter elements for IR image projectors, thermal detector elements for microbolometers, LED-based emitters, or quantum photon detectors such as those found in visible, infrared and ultraviolet FPAs (focal plane arrays), and the like.

A multi-chips module package comprises a lead frame, a first chip, a second chip, a plurality of electrically conductive wires and an encapsulation. The lead frame has a plurality of first leads, second leads and chip pads connecting to the first leads. The first chip is placed on the lead frame and electrically connected to the lead frame through the bumps connecting the bump-bonding pads and the chip pads and the first leads; the second chip is placed over the first chip and electrically connected to the lead frame through the wires connecting the wire-bonding pads to the second leads; and the encapsulation covers the first chip, the second chip, the lead frame, and the wires. In such a manner, it not only reduces the distance of transmitting the electrical signals from chips to the outside but also it can save cost due to the lead frame manufactured by a simple manufacturing processes. In addition, a manufacturing method of the multi-chips module package is provided.

The present invention relates to a method for optimizing power/ground pads in a power/ground distribution network. A power/ground distribution network is created for each of multiple voltage domains and a load current source of each node of the power/ground distribution network is modeled in consideration of the actual shapes and areas of functional blocks. A local optimization method is developed to solve problems generated when a conventional optimization method is applied to optimization of power/ground pads in a bump shape used for a flip chip, and a combination of global optimization and local optimization is applied to layouts using bump bonding, which is discriminated from the conventional optimization method restrictively applicable to layouts using wire bonding.

In a bump bonding technique for forming a bump on an IC, including forming a ball at the tip of a gold wire protruding from a capillary, and providing a metal-to-metal joint by applying ultrasonic vibration from a ultrasonic head through the capillary while pressing the ball against a pad portion on the IC, the metal-to-metal joint is provided by applying the ultrasonic vibration at a frequency in a range of 130 to 320 kHz, more preferably in a range of 170 to 270 kHz, and most preferably at a frequency of 230±10 kHz at room temperatures and atmospheric pressure. Consequently, a bump is formed on an IC having a low heat resistance temperature in a satisfactory joint condition, and a bump is formed with good positional accuracy without giving the influence of heat to the surroundings.

A bump bonding unit is disclosed including a novel storage, transport, and feed system for allocating trays that hold IC chips to various operations of the bump bonding unit. The bump bonding unit includes fist and second tray storage and feed apparatuses that transport trays from empty stacks to full stacks and vice versa, and a transfer head for picking up an IC chip without a bump formed thereon and moving the IC chip to a bump formation location, and for picking up the IC chip with the bump formed thereon and moving the IC chip to a storage location. The bump bonding unit also includes a bump forming unit for forming the bump on the IC chip. Each tray storage apparatus includes a carrier that moves vertically to position a stack of trays, a tray receiver that cooperates with the carrier to support a lowermost tray in the respective stack of trays, and tray holder to support and release a tray supported by the tray receiver.

The invention relates to a graphene pressure sensor comprising a nanofilm, interconnected electrodes, leading columns, a base piece, a package housing, a ceramic base, and sealing rings. Detection is carried out by using the nanofilm, the base piece, and the interconnected electrodes. The nanofilm is formed by an upper boron nitride layer, a lower boron nitride layer, and a graphene layer formed between the upper boron nitride layer and the lower boron nitride layer and is arranged at the lower surface of the base piece; the upper part of the base piece is etched to form a recessed structure and the upper part of the base piece and the ceramic base are in metal bonding to form an oxygen-free vacuum cavity to isolate the nanofilm from the external world so as to provide oxygen-free protection. The interconnected electrodes are formed by bonding of interconnected salient points with interconnected welding plates. With the leading columns, a detection unit is connected externally. The boron nitride-graphene-boron nitride nanofilm not only serves as a functional material of the sensor but also serves as a structural material. The sensor that is capable of work in a high-temperature environment with a high temperature of 1000 DEG C and has advantages of high repeatability, reliability, good acid and alkali-resistant and corrosion-resistant performances can be applied to dynamic and static high-temperature testing environments; and the high-temperature zone is improved obviously.

A bump bonding apparatus and method in which a ball 6 is formed on the tip end of a wire 4 by an electric discharge between the wire 4 and a discharge electrode 3, and a bump 8 is formed by joining this ball 6 to the pad 2 of a semiconductor chip 1. In cases where the position of the capillary 5, when the capillary 5 is lowered following the next ball formation and the tip end portion of the wire (ball 6 or stripped bump) comes into contact with the electrode pad 2 drops below the lower limit of the permissible error range of the ball contacting level (first detected position H1) of the capillary 5 at a time when a normally formed ball 6, comes into contact with the electrode pad 2, a bump non-adhesion signal is outputted, and the bonding operation is stopped.

A device includes a work piece, and a metal trace on a surface of the work piece. A Bump-on-Trace (BOT) is formed at the surface of the work piece. The BOT structure includes a metal bump, and a solder bump bonding the metal bump to a portion of the metal trace. The metal trace includes a metal trace extension not covered by the solder bump. The invention also provides extending metal traces in bump-on-trace structures.

The invention discloses a stamping and welding integrated device and method for electric contacts. The device comprises: a feeding mechanism, a material cutting mechanism, a stamping mechanism, a transmission mechanism, a supporting part, a positioning part, an upper electrode and a lower electrode. The method is as follows: first punch the material strip, cut off the silver wire, then transfer the pre-punched material strip and the cut silver dots to the spot welding position, and finally energize to complete the spot welding, wherein the material cutting mechanism and the stamping mechanism transfer the silver wire to the spot welding position. Wire and material strips are processed into electrical contacts and pre-punched material strips. The transfer mechanism transfers the electrical contacts and the punched strip to the spot welding position. The positioning mechanism makes the electric contact closely contact with the strip. The present invention can obtain a stamped and welded integrated electric contact assembly with excellent welding quality and matching dimensions of the components of the electric contact. The method and device involved in the present invention are suitable for various electric contacts with complex shapes, and the welding speed is greatly improved. Production costs are greatly reduced.