Graphene pressure sensor

Abstract

The invention relates to a graphene pressure sensor comprising a nanofilm, interconnected electrodes, leading columns, a base piece, a package housing, a ceramic base, and sealing rings. Detection is carried out by using the nanofilm, the base piece, and the interconnected electrodes. The nanofilm is formed by an upper boron nitride layer, a lower boron nitride layer, and a graphene layer formed between the upper boron nitride layer and the lower boron nitride layer and is arranged at the lower surface of the base piece; the upper part of the base piece is etched to form a recessed structure and the upper part of the base piece and the ceramic base are in metal bonding to form an oxygen-free vacuum cavity to isolate the nanofilm from the external world so as to provide oxygen-free protection. The interconnected electrodes are formed by bonding of interconnected salient points with interconnected welding plates. With the leading columns, a detection unit is connected externally. The boron nitride-graphene-boron nitride nanofilm not only serves as a functional material of the sensor but also serves as a structural material. The sensor that is capable of work in a high-temperature environment with a high temperature of 1000 DEG C and has advantages of high repeatability, reliability, good acid and alkali-resistant and corrosion-resistant performances can be applied to dynamic and static high-temperature testing environments; and the high-temperature zone is improved obviously.

Description

technical field [0001] The invention belongs to the technical field of high-temperature pressure measurement, and in particular relates to a graphene pressure sensor. Background technique [0002] High-temperature pressure sensors are mainly used for pressure measurement and functional control in high-temperature environments. High-temperature sensors can be used for high-temperature critical parts such as nozzle combustion chambers, compressors, blades, etc. The pressure is monitored in real time to improve combustion performance and propulsion efficiency. [0003] Traditional MEMS pressure sensors use monocrystalline silicon as the substrate, and make P-type diffusion resistors on N-type substrates, relying on reverse-biased PN junctions to achieve electrical isolation. When the ambient temperature exceeds 120°C, the leakage current of the PN junction will increase, and the performance of the sensor will even decrease. invalidated. Faced with the shortage of silicon mate...

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Problems solved by technology

The SOI pressure sensor replaces the PN junction isolation by insulating the buried oxide layer, which raises the operating temperature of the device to 500°C, but due to the limitation of the silicon material itself, it cannot be applied to a higher temperature environment; the SOS pressure sensor is passed on the sapphire crystal. Heteroepitaxial growth of single-crystal silicon thin films can work in a high-temperature environment of 350°C, but the lattice mismatch between sapphire and silicon materials is serious, and it is difficult to ensure long-term stable operation at high temperatures; SiC high-temperature pressure sensors are currently the mainstream research direction in the world , the working temperature of the prototype is up to 600°C, but in the process of device preparation, high-energy ion implantation and other processes are required for SiC, which introduces large damage and many defects, resulting in serious nonlinear temperature drift of the device and poor repeatability

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