Contact hole filling method

A filling method and technology for contact holes, which are used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as poor contact hole formation quality, and achieve the effects of good formation quality, convenient implementation, and reduced contact resistance.

Inactive Publication Date: 2008-06-04
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] The invention provides a contact hole filling method, which improves the contact hole filling pro

Method used

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Embodiment Construction

[0031] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0032] The processing method of the present invention can be widely applied in many applications, and can utilize many suitable materials to make, and below is to illustrate by preferred embodiment, certainly the present invention is not limited to this specific embodiment, this field Common replacements known to those skilled in the art undoubtedly fall within the protection scope of the present invention.

[0033] Secondly, the present invention is described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, which should not be used...

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Abstract

The invention discloses a method for filling a contact hole, which includes the following steps: a silicon substrate, the surface of which has a contact hole opening, is provided; an adhere layer is formed inside the contact hole opening; the silicon wafer is processed by rapid thermal annealing; a barrier layer is formed on the adhere layer; metal is filled on the barrier layer in the contact hole opening. The filling method provided by the invention can be applied to the field of semiconductor manufacture and can solve the problem of forming the contact hole with relatively poor quality in the prior process below 0.25 micrometer through improving the process of filling the contact hole.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for filling a contact hole. Background technique [0002] The manufacturing process of semiconductor integrated circuits is extremely complicated. It is necessary to make various electronic components required by a specific circuit on a small area of ​​silicon wafers, and it is also necessary to make appropriate interconnection wires between each component to form an electrical connection in order to play Its expected function. Among them, in order to realize the electrical connection between multilayer circuits on the silicon chip, a large number of contact holes need to be made, and the performance of these contact holes has an important impact on the overall performance of the circuit. [0003] As the manufacture of integrated circuits develops towards ultra-large-scale integrated circuits, the density of its internal circuits is increasing, the n...

Claims

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Application Information

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IPC IPC(8): H01L21/768
Inventor 周维
Owner SEMICON MFG INT (SHANGHAI) CORP
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