Forming method of metal silicide

Abstract

The invention discloses a forming method for metal silicide, which comprises the following steps of: providing a substrate with the surface having silicon material; forming a metal layer on the substrate; performing the first heat annealing treatment for the substrate; removing the unreacted metal layer on the substrate; forming a stress layer on the substrate; performing the second heat annealing treatment for the substrate. The forming method for metal silicide in the invention forms a low-resistance metal silicide with smooth surface and regular shape by adding the stress layer, thus improving the performance of the device and enhancing the final product rate of products.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a metal silicide. Background technique [0002] In the semiconductor manufacturing process, metal silicide technology is often used to form low-resistance internal electrical connection points on the surface of silicon materials. The so-called metal silicide technology is to deposit a metal that can combine with silicon but cannot react with other materials, such as cobalt (Co), nickel (Ni) or titanium (Ti), etc., and then use thermal annealing to make the metal Layer fully reacts with silicon to form CoSi with low resistivity 2 , NiSi or TiSi 2 and other silicides to improve the electrical performance of devices. [0003] Taking the manufacture of MOS devices as an example, the existing methods for forming metal silicides are described. Figures 1A to 1E It is a schematic diagram of an existing metal silicide formation method, figure...

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Problems solved by technology

[0015] The invention provides a metal silicide formation method to improve the existing problems of metal silicide surface roughness, unevenness and irregular extension of edges after secondary thermal annealing

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