Resonator and forming method thereof
A resonator and piezoelectric technology, applied in piezoelectric/electrostrictive/magnetostrictive devices, piezoelectric/electrostrictive device manufacturing/assembly, impedance network, etc., can solve the problem of difficult integration of RF front-end chips, filtering The problem of large size of the device can be solved, and the effect of improving the forming quality, improving performance and saving cost can be achieved.
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[0029] It can be seen from the background art that at present, a film bulk acoustic resonator (Film Bulk Acoustic Resonator, FBAR) is widely used. But the performance of the resonators formed so far is not good.
[0030] Specifically, the current manufacturing process of thin film bulk acoustic resonators is usually to form a groove in the substrate, form a sacrificial layer in the groove, and then sequentially form a piezoelectric stack structure on the sacrificial layer, and in order to release the For the sacrificial layer, it is usually necessary to form a release hole through the piezoelectric stack structure, and use the release hole to remove the sacrificial material layer in the groove to finally form a cavity.
[0031] Wherein, the step of forming the sacrificial layer generally includes: forming a sacrificial material layer in the groove, the sacrificial material layer is also formed on the substrate; grinding and removing the sacrificial material layer higher than t...
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Application Information
- IPC
- H03H9/17; H03H9/02; H03H3/02; H03H9/54; H10N30/00; H10N30/05; H10N30/073; H10N30/086; H10N30/87
- CPC
- H03H9/171; H03H9/02007; H03H3/02; H03H9/54; H03H2003/023; H03H9/173; H03H2003/021; H10N30/05
- Inventors
- æšćœç



