The invention provides a pixel
electrode preparation method which can improve the flatness, and the pixel
electrode is manufactured on a
silicon substrate which is provided with a
control circuit, as well as top
metal and a
protective oxide layer which are stacked on the
control circuit. In the prior art, when the pixel
electrode is manufactured, latticed
oxide is prone to be facilitated to generate a convex, thus affecting the flatness of the pixel electrode, and further affecting the performance of
liquid crystal on the
silicon substrate. In the pixel electrode preparation method, firstly, a latticed
oxide pattern used for dividing the top
metal into a plurality of pixel electrodes is prepared by
lithography and
etching; then, an isolation
oxide layer is deposited; after that, optical
resist is coated on the isolation oxide layer and a pattern of pixel electrodes is prepared by
lithography; then, the isolation oxide layer is etched according to the pattern of pixel electrodes and the optical
resist is removed; after that, a flat oxide layer is deposited on the flat surface of the
silicon substrate; finally, maskless
etching is carried out to form the latticed oxide and the pixel electrodes. The invention has the
advantage that the flatness of the pixel electrode can be greatly improved, and then the performance, especially the
display contrast, of the
liquid crystal on the silicon substrate is improved.