Gas inlet structure and gas inlet method of chemical vapor deposition equipment and equipment

Abstract

The invention provides a technical scheme of a gas inlet structure and a gas inlet method of chemical vapor deposition equipment. A concentration detection unit is used for detecting the current concentration value of source gas on a gas inlet pipeline, and a control unit is utilized to control a flow regulating unit to regulate the flow value of the process gas according to the current concentration value and the target concentration value so that the mass of the process gas in the reaction chamber can be regulated, and the mass of the source gas in the process gas is equal to the target mass. Therefore, the quality of the source gas in the process gas in the reaction chamber can be consistent when the substrate is prepared at different moments, and the consistency of the growth rate of the silicon wafer in the reaction chamber is ensured, the thickness consistency of the silicon wafer is improved and the product yield is further improved. In addition, the invention also provides thechemical vapor deposition equipment.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to an intake structure of a chemical vapor deposition device, an intake method and a chemical vapor deposition device using the intake structure of the chemical vapor deposition device. Background technique [0002] Chemical vapor deposition epitaxial growth is to transport the reaction gas to the reaction chamber, and through heating and other methods, the growth atoms are deposited on the substrate to grow a single crystal layer. Schematic diagram of the vapor phase epitaxy growth process. figure 1 . [0003] TCS (SiHCl 3 ), as a process gas required for silicon epitaxy, is stored in the bubbler in liquid form, and is carried into the reaction chamber by means of hydrogen gas for chemical reaction. The quality of the TCS carried by the hydrogen will affect the growth rate and thickness uniformity of the single crystal. [0004] figure 2 It is ...

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Problems solved by technology

[0005] However, in the process of using the above gas inlet structure, there will still be differences in the growth rate of the silicon wafers prepared at different times, and even the thickness of the same silicon wafer at different positions is not the same, resulting in poor consistency of the thickness of the silicon wafer, and the product decline in quality

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