A high-power photomultiplier is characterized by including an incident light source, a photocathode, a primary electron emitter, a secondary electron emitter, a tertiary electron emitter, a quaternary electron emitter, a photocurrent output device, a grounding protection device, a primary current attenuation, a secondary current attenuation, a tertiary current attenuation and a quaternary current attenuation; wherein the primary electron emitter is made of a cesium antimonide nickel alloy electrode material, the second electron emitter is made of a lanthanum oxide alloy electrode material, the tertiary electron emitter and the quaternary electron emitter are made of a cobalt oxide copper beryllium alloy electrode material, the photocurrent output device is provided with a beam filter membrane with the thickness of 2.98 micrometers, and the beam filter membrane is an N-metachromicacid europium iodide nano composite filter membrane.