A novel microchannel plate electrode with ion blocking function and its manufacturing method

Abstract

The invention is a microchannel plate electrode with ion blocking function, which is made on the input or output surface of the microchannel plate in the negative electron affinity photocathode type vacuum photodetection device, and is used to apply working voltage to the normal operation of the microchannel plate , production method: on the input surface or the output surface of the microchannel plate, transfer and manufacture a high-strength, uniform and high-coverage single-layer or multi-layer graphene film, so that the film layer has both conventional microchannel plate electrode functions and With the function of ion barrier film, the negative electron affinity photocathode type vacuum photodetector is mainly composed of the front light window, the photocathode on the light window, the middle microchannel plate, the rear anode, and the sealed ceramic metal shell. composition. The advantages can greatly improve the electron transmittance compared with the structure of the traditional nickel-chromium metal electrode plus Al2O3 or SiO2 ion barrier film, reduce the scattering effect on electrons, and improve the detection efficiency and signal-to-noise ratio of the device.

Description

technical field [0001] The invention relates to the technical field of electric vacuum photoelectric detection, and specifically describes a novel microchannel plate electrode with ion blocking function that can be widely used in negative electron affinity photocathode type vacuum photoelectric detection devices and a manufacturing method thereof. Background technique [0002] Vacuum photoelectric detection device is an important branch of photoelectric detection field. This type of device can be widely used in many fields such as defense equipment, aerospace, instrumentation and medical equipment, such as ultraviolet warning, lidar, low-light night vision, corona detection Wait. With the continuous improvement of application requirements, the sensitivity of the traditional second-generation alkalinide photocathode is more and more unable to meet the actual demand, and with the development of semiconductor material technology, the traditional second-generation cathode is or ...

AI Technical Summary

Problems solved by technology

Although the third-generation tube has specially adjusted the voltage and distance between the cathode and the microchannel plate, it still weakens the advantage of the high quantum efficiency of the GaAs photocathode to a certain extent, and increases the halo

And the traditional Al 2 o 3 or SiO 2 The manufacturing process of the ion barrier film is quite complex and difficult to control, so the traditional Al 2 o 3 or SiO 2 The ion barrier film is not the best choice for the third-generation tubes, but the bottleneck that limits the improvement and improvement of the performance of the third-generation tubes

In addition, the introduction of the traditional ion barrier film will also cause electron dispersion and reduce the resolution of the image intensifier tube.

[0007] To make up for the traditional Al 2 o 3 or SiO 2 The defects of the ion barrier film, the ultra-thin and dense new ion barrier film is used in the process of the fourth generation low-light image intensifier tube, and the process method of removing the ion barrier film, which was praised in the early days, because of the reduced lifespan and The decline in the yield rate and no longer use

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