Novel micro-channel plate electrode with ion blocking function and manufacturing method thereof

Abstract

The invention provides a novel micro-channel plate electrode with the ion blocking function. The novel micro-channel plate electrode is manufactured on the input or output face of a negative electron affinity photoelectric cathode type vacuum photoelectric detecting device and used for exerting working voltage on normal work of a micro-channel plate. A manufacturing method comprises the steps that a uniform single-layer or multi-layer graphene film high in strength and coverage is manufactured on the input or output face of the micro-channel plate in a transferring mode, and has the conventional micro-channel plate electrode effect and the ion barrier film function, and the negative electron affinity photoelectric cathode type vacuum photoelectric detecting device is mainly composed of an optical window at the front end, a photoelectric cathode on the optical window, a middle micro-channel plate, an anode at the rear end, and a sealed ceramic metal tube shell. The novel micro-channel plate electrode has the advantages that the electron penetration rate is greatly increased compared with that of the traditional structure of a nickel-chromium metal electrode and a Al2O3 or SiO2 ion barrier film, the scattering effect on electrons is reduced, the detecting efficiency of the device is improved, and the signal to noise ratio of the device is increased.

Description

technical field [0001] The invention relates to the technical field of electric vacuum photoelectric detection, and specifically describes a novel microchannel plate electrode with an ion blocking function that can be widely used in negative electron affinity photocathode vacuum photodetection devices and a manufacturing method thereof. Background technique [0002] Vacuum photodetection devices are an important branch of the field of photoelectric detection. This type of device can be widely used in many fields such as national defense equipment, aerospace, instrumentation, and medical equipment, such as ultraviolet alarm, laser radar, low-light night vision, and corona detection. Wait. With the continuous improvement of application requirements, the sensitivity of the traditional second-generation alkali photocathode cannot meet the actual needs more and more. With the development of semiconductor material technology, the traditional second-generation cathode is or will so...

AI Technical Summary

Problems solved by technology

Although the third-generation tube has specially adjusted the voltage and distance between the cathode and the microchannel plate, it still weakens the advantage of the high quantum efficiency of the GaAs photocathode to a certain extent, and increases the halo

And the traditional Al 2 o 3 or SiO 2 The manufacturing process of the ion barrier film is quite complex and difficult to control, so the traditional Al 2 o 3 or SiO 2 The ion barrier film is not the best choice for the third-generation tubes, but the bottleneck that limits the improvement and improvement of the performance of the third-generation tubes

In addition, the introduction of the traditional ion barrier film will also cause electron dispersion and reduce the resolution of the image intensifier tube.

[0007] To make up for the traditional Al 2 o 3 or SiO 2 The defects of the ion barrier film, the ultra-thin and dense new ion barrier film is used in the process of the fourth generation low-light image intensifier tube, and the process method of removing the ion barrier film, which was praised in the early days, because of the reduced lifespan and The decline in the yield rate and no longer use

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