High-power photomultiplier

A photomultiplier, high-power technology, applied in electron multiplier details, dynodes, etc., can solve the problems of radiation insensitivity, reduced sensitivity, increased noise, etc., to avoid the phenomenon of spectral radiation insensitivity and solve the increase of dark current , Eliminate the effect of continuous fatigue instability

Inactive Publication Date: 2014-09-17
成都中远千叶科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Photoelectric technology is based on the theory of external photoelectric effect, secondary electron emission and electron optics. It combines the characteristics of high gain, low noise, high frequency response and large signal receiving area, so it has extremely high sensitivity and ultra-fast time response. Photosensitive devices can work in the ultraviolet, visible and near-infrared spectral regions, but are not sensitive to visible light, near-ultraviolet and other spectral radiation outside the sun-blind ultraviolet region. If a secondary emission multiplication system is used, it can detect ultraviolet, visible and near-infrared In the photodetector of radiant energy in the infrared region, the sensitivity will decrease and the noise will increase, so it is necessary to improve the conversion efficiency of the photomultiplier device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-power photomultiplier
  • High-power photomultiplier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The incident light source (1) provides a qualified light beam, and a photoelectric effect is generated on the photocathode (2) to obtain a certain number of photoelectrons. Under the action of the electric field force of the emitter, these photoelectrons are accelerated to the primary electron emitter (3). And produce a bombardment effect on the primary electron emitter (3), the number of photoelectrons will increase, and these newly generated photoelectrons will continue to accelerate to the secondary electron emitter (4) and the tertiary electron emitter successively under the action of the electric field force between the electrodes. (5), four times the electron emitter (6) bombards until a sufficient number of photoelectrons are produced, the amplified current is output through the photocurrent output device (7), and the voltage balance is realized through the grounding protection device (8) to prevent charge accumulation Discharge, through the current primary attenu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A high-power photomultiplier is characterized by including an incident light source, a photocathode, a primary electron emitter, a secondary electron emitter, a tertiary electron emitter, a quaternary electron emitter, a photocurrent output device, a grounding protection device, a primary current attenuation, a secondary current attenuation, a tertiary current attenuation and a quaternary current attenuation; wherein the primary electron emitter is made of a cesium antimonide nickel alloy electrode material, the second electron emitter is made of a lanthanum oxide alloy electrode material, the tertiary electron emitter and the quaternary electron emitter are made of a cobalt oxide copper beryllium alloy electrode material, the photocurrent output device is provided with a beam filter membrane with the thickness of 2.98 micrometers, and the beam filter membrane is an N-metachromicacid europium iodide nano composite filter membrane.

Description

technical field [0001] The invention relates to the field of optoelectronic devices, in particular to a high-power photomultiplier device. Background technique [0002] Photoelectric technology is based on the theory of external photoelectric effect, secondary electron emission and electron optics. It combines the characteristics of high gain, low noise, high frequency response and large signal receiving area, so it has extremely high sensitivity and ultra-fast time response. Photosensitive devices can work in the ultraviolet, visible and near-infrared spectral regions, but are not sensitive to visible light, near-ultraviolet and other spectral radiation outside the sun-blind ultraviolet region. If a secondary emission multiplication system is used, it can detect ultraviolet, visible and near-infrared In the photodetector of radiant energy in the infrared region, the sensitivity will decrease and the noise will increase, so it is necessary to improve the conversion efficienc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01J43/04H01J43/06
Inventor 储冬红郭楚媛郭睦庚严方园彭飞其他发明人请求不公开姓名
Owner 成都中远千叶科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap