The invention discloses an
electron beam
exposure machine and a write field
distortion correction method thereof. The
correction method comprises the following steps: confirming a mark position on a
wafer; generating first scanning data comprising coordinates of a plurality of ideal points, and generating a plurality of moving positions of the
wafer moved by the displacement table based on the mark position and the parameters of the writing field; the displacement platform successively moves the
wafer according to a plurality of moving positions, after the wafer is moved each time, an
electron beam is emitted according to the scanning
voltage of one ideal point in the first scanning data, and a
distortion point corresponding to the ideal point is formed by scanning and imaging in a writing field on the wafer; a plurality of
distortion points are formed by scanning in a writing field on the wafer after the displacement table moves successively according to the plurality of moving positions and is scanned and imaged successively, and the coordinates of the plurality of distortion points are in one-to-one correspondence with the coordinates of the plurality of ideal points; one writing field is divided into a plurality of correction units, and each correction unit at least comprises four distortion points located at corners; for each correction unit, based on a preset
correction algorithm, calculating a correction parameter set according to the coordinates of the four distortion points at the four corners and the coordinates of the corresponding ideal points; the displacement table moves the wafer, so that the
exposure area of the wafer is aligned with the electronic optical
system; obtaining coordinates of each target point on the
layout in a writing field; on the basis of a
correction algorithm, coordinates of scanning points corresponding to the target points are calculated according to the coordinates of the target points and a correction parameter set of a correction unit, and second scanning data are formed; and emitting
electron beams according to the second scanning data to form the
layout.