Electron beam application device comprising: a sample stage (101) on which a sample (20) is to be arranged, an
electron-optical
system comprising an objective lens (102) for generating an electronic image by electrons emitted from the sample (20) and whose
optical axis (109, 305, 315, 503) is perpendicular to a sample holding surface of the sample stage (101), and a camera (108) that generates the electronic image, wherein the
electron-optical
system comprises: a mirror aberration corrector (106) arranged perpendicular to the
optical axis (109, 305, 315, 503), several
magnetic field sectors (104, 301, 302, 501) through which the path of the electrons passing through the objective lens (102) is directed away from the
optical axis (109, 305, 315, 503). is deflected so that the electrons fall onto the mirror aberration corrector (106), and the path of the electrons emitted by the mirror aberration corrector (106) to the optical axis (109, 305, 315,503), and a doublet lens (105) is arranged between adjacent
magnetic field sectors (104, 301, 302, 501) along the path of the electrons, wherein the several
magnetic field sectors (104, 301, 302, 501) have the same
deflection angle at which the path of the electrons is deflected, and the doublet lens (105) is arranged such that its object plane or
image plane is the
median plane (508) of the adjacent magnetic field sectors (104, 301, 302, 501) along the path of the electrons.