335 results about "Electron optics" patented technology

An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

A small-sized charged particle beam apparatus capable of maintaining high vacuum even during emission of an electron beam is provided. A nonevaporative getter pump is placed upstream of differential pumping of an electron optical system of the charged particle beam apparatus, and a minimum number of ion pumps are placed downstream, so that both the pumps are used in combination. Further, by mounting a detachable coil on an electron gun part, the inside of a column can be maintained under high vacuum with a degree of vacuum in the order of 10−8 Pa.

An electron beam apparatus such as a sheet beam based testing apparatus has an electron-optical system for irradiating an object under testing with a primary electron beam from an electron beam source, and projecting an image of a secondary electron beam emitted by the irradiation of the primary electron beam, and a detector for detecting the secondary electron beam image projected by the electron-optical system. Specifically, the electron beam apparatus comprises beam generating means 2004 for irradiating an electron beam having a particular width, a primary electron-optical system 2001 for leading the beam to reach the surface of a substrate 2006 under testing, a secondary electron-optical system 2002 for trapping secondary electrons generated from the substrate 2006 and introducing them into an image processing system 2015, a stage 2003 for transportably holding the substrate 2006 with a continuous degree of freedom equal to at least one, a testing chamber for the substrate 2006, a substrate transport mechanism for transporting the substrate 2006 into and out of the testing chamber, an image processing analyzer 2015 for detecting defects on the substrate 2006, a vibration isolating mechanism for the testing chamber, a vacuum system for holding the testing chamber at a vacuum, and a control system 2017 for displaying or storing positions of defects on the substrate 2006.

A multi-column electron beam inspection system is disclosed herein. The system is designed for electron beam inspection of semiconductor wafers with throughput high enough for in-line use. The system includes field emission electron sources, electrostatic electron optical columns, a wafer stage with six degrees of freedom of movement, and image storage and processing systems capable of handling multiple simultaneous image data streams. Each electron optical column is enhanced with an electron gun with redundant field emission sources, a voltage contrast plate to allow voltage contrast imaging of wafers, and an electron optical design for high efficiency secondary electron collection.

An electron beam device according to the present invention is made up of an electron beam source for emitting an electron beam, an electron optical system for irradiating the electron beam onto a specimen, a specimen holder for holding the specimen, a specimen tilting section for producing relative tilt angles between the specimen holder and the electron beam, an electron beam detecting section for detecting electron beam emitted from the specimen, and a data correcting section for correcting the three-dimensional detection data to have specified relationship under the condition of a relative tilt angle between the specimen holder and the electron beam.

An object of this invention is to make it easy to adjust a position of the energy beam to irradiate and a position of a focal point of a light collecting mirror part, and to prevent displacement of the light collecting part due to vibration with a simple arrangement. A sample measuring device in accordance with this invention is to measure light generated from a sample W by irradiating electron beams EB on the sample W, and comprises a electron optical column part 23 that converges the electron beams EB, and a light collecting mirror part 31 that is arranged between the electron optical column part 23 and the sample W and that has an energy beam path 312 to pass the electron beams EB converged by the electron optical column part 23 and to irradiate the electron beams EB on the sample W and a mirror face 311 whose focal point F is set on an axis of the energy beam path 312 and that collects the light L generated from the sample W by means of the mirror face 311, wherein the light collecting mirror part 31 is supported by the electron optical column part 23 so that the axis of the electron beams EB coincides with the focal point F.