The invention discloses a method for manufacturing a zeroth
metal layer of an active region. The method comprises the following steps of: 1, providing a
semiconductor substrate on which an active region
contact hole opening forming process is completed; 2, forming an inner side wall on the side surface of the opening of the active area
contact hole; and step 3, forming a BARC layer. And 4, performing a photoetching process to form a
photoresist pattern to open the first
ion implantation region. And step 5, removing the BARC layer in the first
ion implantation region and performing first
ion implantation to form a
contact region at the bottom of the active region
contact hole opening. And step 6, removing the BARC layer by adopting an
ashing process, wherein the
ashing process does not contain
oxygen so as to ensure that the inner side wall is not oxidized. And 7, pre-cleaning is conducted, and in the pre-cleaning process, the inner side wall is reserved due to the fact that the inner side wall is not oxidized. And 8, forming a zeroth
metal layer of the active region. According to the invention, the
contact region can be formed to reduce the
contact resistance, meanwhile, the size of the M0A can be ensured not to be enlarged, the
parasitic capacitance between the M0A and the grid can be reduced, and the
short circuit between the M0A and the grid can be prevented.