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Blue-stretch variable-bandgap AlGaAs/GaAs photocathode and manufacturing method thereof

A photocathode and variable bandgap technology, which is applied in cold cathode manufacturing, electrode system manufacturing, discharge tube/lamp manufacturing, etc., can solve the problems of low quantum efficiency in detecting blue, violet, and short-wave photons, and achieve improved resolution, The effect of improving quantum efficiency

Inactive Publication Date: 2012-01-04
EAST CHINA UNIV OF TECH
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Problems solved by technology

[0004] Aiming at the current situation that the existing AlGaAs / GaAs photocathode cannot detect blue and violet light very well, and the quantum efficiency of short-wave photons is not high, the present invention provides a x Ga 1-x AlGaAs / GaAs photocathode with As buffer layer and its preparation method

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  • Blue-stretch variable-bandgap AlGaAs/GaAs photocathode and manufacturing method thereof
  • Blue-stretch variable-bandgap AlGaAs/GaAs photocathode and manufacturing method thereof
  • Blue-stretch variable-bandgap AlGaAs/GaAs photocathode and manufacturing method thereof

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[0026] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0027] figure 1 It is a schematic diagram of the blue extended variable bandgap AlGaAs / GaAs photocathode. As shown in the figure, the blue extended variable bandgap AlGaAs / GaAs photocathode is composed of 9741 glass (1), SiO 2 Passivation layer (2), Si 3 N 4 AR coating (3), variable bandgap Al x Ga 1-x As buffer layer (4), GaAs emission layer (5) and Cs / O activation layer (6).

[0028] The UV and blue-violet light transmittance of 9741 glass (1) is much higher than that of 7056 glass in traditional GaAs photocathode, so that the incident light can be transmitted through a wide wavelength range from ultraviolet to near infrared. Moreover, the glass is also a part that maintains the mechanical strength of the photocathode.

[0029] SiO 2 Passivation layer (2) on the glass substrate to protect the Si 3 N 4 The anti-reflection c...

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Abstract

The invention discloses a blue-stretch variable-bandgap AlGaAs / GaAs photocathode and a manufacturing method thereof. The cathode consists of a 9741 glass, an SiO2 passivation layer, an Si3N4 anti-reflection film, a variable-bandgap AlxGa1-xAs buffer layer, a GaAs emission layer and a Cs / O activation layer. In the AlxGa1-xAs buffer layer with a certain thickness, a variable-bandgap buffer layer with gradually-reduced Al component from the AlxGa1-xAs buffer layer to the GaAs emission layer can be generated, and a built-in electric field from the AlxGa1-xAs buffer layer to the GaAs emission layer is constructed; under the action of the built-in electric field, photoelectrons generated in the AlxGa1-xAs layer are transported to the emission layer in a diffusion and drifting mode, thus the photoelectric emission quantum efficiency of short wave photons can be improved and the purpose of blue stretch can be reached.

Description

technical field [0001] The invention relates to the technical field of photoelectric emission materials, in particular to an Al x Ga 1-x The invention relates to a blue-stretched variable-bandgap AlGaAs / GaAs photocathode and a preparation method thereof combining As / GaAs compound semiconductor material component control and epitaxial growth technology. Background technique [0002] A photocathode is a photoemissive material that converts light signals into electrical signals by using the external photoelectric effect. GaAs photocathode with negative electron affinity has many advantages such as high quantum efficiency, small dark emission, high energy and spatial resolution, high emission current density, and uniform planar electron emission. It has been widely used in the fields of photodetection and imaging. widely used. [0003] The AlGaAs / GaAs photocathode used in photoelectric imaging has a low photoresponse rate for blue-violet light and shorter wavelengths due to t...

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Application Information

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IPC IPC(8): H01J29/04H01J9/02
Inventor 邹继军常本康张益军金解云邓文娟彭新村
Owner EAST CHINA UNIV OF TECH
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