Homojunction photoelectric detector based on gallium oxide energy band regulation and preparation method thereof

A photodetector, gallium oxide technology, applied in photovoltaic power generation, circuits, electrical components, etc.
CN112951948AActive Publication Date: 2021-06-11ZHENGZHOU UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
ZHENGZHOU UNIV
Publication Date
2021-06-11

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Abstract

The invention provides a gallium oxide energy band regulation-based homojunction photoelectric detector and a preparation method thereof. The homojunction photoelectric detector comprises an insulated substrate, the substrate (1) is sequentially provided with an amorphous Ga2O3 film and a beta-phase Ga2O3 film, and the amorphous Ga2O3 film and the beta-phase Ga2O3 film are both provided with contact electrodes. Aiming at the problem that Ga2O3 cannot realize stable p-type doping to limit the preparation of the homojunction photoelectric detector, the invention provides a method for preparing the homojunction photoelectric detector by regulating and controlling the amount of oxygen in the growth process to change the gallium oxide band gap and utilizing the gallium oxide with two different band gaps, so the problem of p-type doping of Ga2O3 during the preparation of the homojunction photoelectric detector is solved; and a foundation is laid for energy band regulation and control of Ga2O3 and preparation and research of a high-performance Ga2O3 homojunction photoelectric detector.
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Description

technical field

[0001] The invention relates to the field of photoelectric device preparation, in particular to a homojunction photodetector based on gallium oxide energy band regulation and a preparation method thereof. Background technique

[0002] Gallium oxide (Ga 2 o 3 ) as an ultra-wide bandgap semiconductor, due to its high breakdown field, high thermal and chemical stability, and high Ballyga figure of merit, it has attracted great attention in the fields of power electronics, solar-blind photodetectors and sensors. extensive attention. In addition, for Ga prepared under different conditions 2 o 3 The samples were studied and found that their bandgap varied between 4.4-5.1eV, corresponding to wavelengths of 234-280nm in the solar-blind region, making them suitable for solar-blind light detection. Various Ga-based 2 o 3 electronic and optoelectronic devices, however, how to improve Ga-based 2 o 3 The performance of devices is one of the most challenging issue...

Claims

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