Method for improving luminance of AlGaInP quaternary single-face dual-electrode light-emitting diode with GaAs substrate

Abstract

The invention relates to a method for improving the luminance of an AlGaInP quaternary single-face dual-electrode light-emitting diode with a GaAs substrate. The oxidized DBR layer technology, the electrode structuralization technology, the high current expansion technology, the same-face dual-electrode technology and the like are integrated, LED open circuits or LED half open circuits are avoided, and the dual-electrode light-emitting diode can become a high-luminance same-face dual-electrode light-emitting diode which is high in reflection and free from Joule heat. After the steps of epitaxial growth and electrode manufacture of a high-luminance light-emitting diode chip are completed, the chip undergoes half cutting and finally undergoes one time of oxidization, the conductivity of the DBR layer is changed so that the DBR layer becomes an insulating layer, the reflection ratio is greatly improved, loss caused by generation of the Joule heat, scattering and the like is eliminated, and 100% luminous efficiency is achieved.

Description

technical field [0001] The invention relates to a method for improving the brightness of a GaAs substrate AlGaInP quadruple single-sided double-electrode light-emitting diode, which belongs to the technical field of optoelectronic devices. Background technique [0002] Due to its advantages of high efficiency, energy saving, and environmental protection, light-emitting diodes have been widely used in automobile and traffic signal indication, large-screen display, backlighting of liquid crystal display, solid-state lighting and other fields. Quaternary alloy materials (Al x Ga 1-x ) 0.5 In 0.5 P has a wide direct bandgap, covers the visible light wavelength range of 560-650nm, and can completely match the lattice of GaAs substrate. It is an excellent material for preparing red to green band LEDs. The light extraction efficiency of AlGaInP LED is very low due to the difference between the refractive index of semiconductor and air, which makes the light exit cone of the lig...

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Problems solved by technology

Chinese patent CN1355569 discloses a high-reflection Bragg reflector structure, which is characterized in that a part of the Bragg reflector is oxidized to increase the reflectivity, but this method does not play a very obvious role, and the AlGaAs refractive index after oxidation decreases , and losses in this layer (losses including scattering and absorption) and Joule heating from series resistance do not reduce much

This patent only provides an improved Al 2 o 3 / GaAs DBR layer interface quality method, that is, the AlAs / GaAs DBR layer is directly annealed in the oxidation furnace after wet oxidation. This method only eliminates the stress at the DBR interface, but does not affect the conductivity and reflection of the DBR layer. rate, Joule heat elimination, etc. have no improvement effect

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