68 results about "Electron loss" patented technology

An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and / or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

The invention discloses a photovoltaic material with a thin-layer perovskite structure and a preparation method for the photovoltaic material, belongs to the field of the photovoltaic material, and particularly belongs to the field of the photovoltaic material with the perovskite structure. An inducer is added in a synthetic process of a crystal with a perovskite structure at a proper temperature and pH value to enable the original crystal with a cubic crystal system perovskite structure to distort so as to obtain a crystal with a thin-layer stacked perovskite structure. The preparation method provided by the invention is simple in process and easy to operate; the obtained crystal with the thin-layer stacked perovskite structure is high in electron transmission efficiency; and when the photovoltaic material with the thin-layer perovskite structure is applied to a solar cell, the solar cell is high in photoelectric conversion rate; and in addition, the photovoltaic material is low in electron loss and high in transmission efficiency.

The invention discloses a magnetic circuit designing method capable of adjusting the magnetic interface form of a magnetic conductive column Hall thruster, relates to a magnetic circuit structural design technology for the magnetic interface form of the Hall thruster, and aims to solve the problems of high electron loss, low electron utilization efficiency and low thruster discharging efficiency due to a magnetic interface existing in an existing magnetic conductive column Hall thruster. According to the magnetic circuit designing method, upper side shells or lower side shells are added on themagnetic conductive column Hall thruster; the positions, heights and thicknesses of the upper side shells or the lower side shells are changed to realize the adjustment of the form of the magnetic interface; the upper side shells are added in order to increase the angle between the magnetic interface and the axis of the thruster; the lower side shells are added in order to reduce the angle between the magnetic interface and the axis of the thruster; the upper side shells are arranged on the outer side of an outer magnet exciting coil at intervals, and are in contact with the outer edge of anouter magnetic pole; and the lower side shells are arranged on the outer side of the outer magnet exciting coil at intervals, and are in contact with the outer edge of a bottom plate. The magnetic circuit designing method has the beneficial effects of reducing the electron loss, improving the electron utilizing efficiency, and realizing high efficiency of the thruster.

A method and system are disclosed for improving characteristic peak signals in electron energy loss spectroscopy (EELS) and energy dispersive x-ray spectroscopy (EDS) measurements of crystalline materials. A beam scanning protocol is applied which varies the inclination, azimuthal angle, or a combination thereof of the incident beam while spectroscopic data is acquired. The method and system may be applied to compositional mapping.

The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms. When employing such beams, the addition of electrons or negative ions for neutralizing the effects of space charge is often crucial for achieving success. Without this supplement, ion beams can ‘blow-up’ causing loss of intensity and disruption of beam focusing. In the present disclosure, methods are presented for introducing and constraining neutralizing low-energy electrons and negative ions within the boundaries of ribbon beams within regions of magnetic field deflection. Apparatus is described for maintaining neutralization based upon a reduction of electron losses, plasma bridge connections and secondary electron production. As part of plasma introduction to the deflection region a novel cryogenic pumping apparatus selectively removes neutral atoms from a plasma stream.

Adjustable resolution electron energy loss spectroscopy methods and apparatus are disclosed herein. An example method includes operating an electron microscope in a first state, the first state including operating a source of the electron microscope at a first temperature, obtaining, by the electron microscope, a first EELS spectrum of a sample at a first resolution, the first resolution based on the first temperature, operating the electron microscope in a second state, the second state including operating the source of the electron microscope at a second temperature, the second temperature different than the first temperature, and obtaining, by the electron microscope, a second EELS spectrum of the sample at a second resolution, the second resolution based on the second temperature, wherein the second resolution is different than the first resolution.

The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms. When employing such beams, the addition of electrons or negative ions for neutralizing the effects of space charge is often crucial for achieving success. Without this supplement, ion beams can ''blow-up'' causing loss of intensity and disruption of beam focusing. In the present disclosure, methods are presented for introducing and constraining neutralizing low-energy electrons and negative ions within the boundaries of ribbon beams within regions of magnetic field deflection. Apparatus is described for maintaining neutralization based upon a reduction of electron losses, plasma bridge connections and secondary electron production. As part of plasma introduction to the deflection region a novel cryogenic pumping apparatus selectively removes neutral atoms from a plasma stream.

The invention relates to low-delay-pulse, low-crosstalk and high-collection-efficiency micro-channel plate. The micro-channel plate comprises a two-dimensional array composed of a plurality of parallel channels. An input electrode layer is plated on the upper end surface of the two-dimensional array. An output electrode layer is plated on the lower end surface of the two-dimensional array. The improvement of the invention is embodied as an input port arranged in the input electrode layer and an output port arranged in the output electrode layer. The input port is communicated with the upper ends of the channels, and the output port is communicated with the lower ends of the channels. The input port is gradually reduced from top to bottom, so that the opening area of the channels of the micro-channel plate is larger than 90%. The surface of the input electrode is covered with a thin film with a high secondary electron emission coefficient. According to the micro-channel plate, the opening area of micro-channels is large, so that the probability of electrons entering the channels is increased. The collecting efficiency is improved. The thin film made of the high-secondary electron emission material and covered on the surface of the electrode can reduce the probability of electron loss falling on the surface of the electrode. As a result, the collecting efficiency is further improved.

A process for fabricating non-volatile memory by tilt-angle ion implantation comprises essentially the steps of implanting sideling within a nitride dielectric layer heterogeneous elements such as, for example, Ge, Si, N2, O2, and the like, for forming traps capable of capturing more electrons within the nitride dielectric layer such that electrons can be prevented from binding together as the operation time increased; etching off both ends of the original upper and underlying oxide layers to reduce the structural destruction caused by the implantation of heterogeneous elements; and finally, depositing an oxide gate interstitial wall to eradicate electron loss and hence promote the reliability of the device.

The invention belongs to the field of electronic components and discloses a packaging film for the electronic components. The packaging film is prepared from ethylene-vinyl acetate copolymer, silane coupling agent, rosin resin, plant ash, illite, stearic acid, zeolite powder and fatty acid polyglycol ester. The packaging film is a thin film being 10-100micron in thickness or a coating being 30-100micron in thickness; by treatment at 200DEG C for one hour, the elongation of the packaging film is lower than 4.5% while the tensile strength of the packaging film is higher than 56MPa at 30DEG C, so that the packaging film is excellent in mechanical property and capable of strongly protecting the electronic components from physical and electron loss caused by external or other surrounding electronic components after packaging the electronic components; the vapor permeation rate is lower than 0.03g / m<2> / 24h, so that the packaging film has an excellent waterproof and damp-proof function and is capable of protecting the electronic components from water damage in storage, transport and utilization after packaging the electronic components, and oxidative corrosion of the electronic components can be greatly decelerated.

An electron microscope capable of producing EELS (electron energy-loss spectroscopy) has a spectral position correcting signal supply circuit for supplying a spectral position correcting signal H to a first driver amplifier to project spectra at the center of a CCD camera. This correcting signal H corresponds to a beam deflection signal A′ supplied from a scan generator to a second driver amplifier, an excitation signal B′ supplied from an intermediate lens excitation signal supply circuit to a third driver amplifier, and another excitation signal supplied from a projector lens excitation signal supply circuit to a fourth driver amplifier.

The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms. When employing such beams, the addition of electrons or negative ions for neutralizing the effects of space charge is often crucial for achieving success. Without this supplement, ion beams can ‘blow-up’ causing loss of intensity and disruption of beam focusing. In the present disclosure, methods are presented for introducing and constraining neutralizing low-energy electrons and negative ions within the boundaries of ribbon beams within regions of magnetic field deflection. Apparatus is described for maintaining neutralization based upon a reduction of electron losses, plasma bridge connections and secondary electron production. As part of plasma introduction to the deflection region a novel cryogenic pumping apparatus selectively removes neutral atoms from a plasma stream.

A process for fabricating non-volatile memory by tilt-angle ion implantation comprises essentially the steps of implanting sideling within a nitride dielectric layer heterogeneous elements such as, for example, Ge, Si, N2, O2, and the like, for forming traps capable of capturing more electrons within the nitride dielectric layer such that electrons can be prevented from binding together as the operation time increased; etching off both ends of the original upper and underlying oxide layers to reduce the structural destruction caused by the implantation of heterogeneous elements; and finally, depositing an oxide gate interstitial wall to eradicate electron loss and hence promote the reliability of the device.

The invention relates to a transmission charged particle microscope comprising a charged particle beam source for emitting a charged particle beam, a sample holder for holding a sample, an illuminator for directing the charged particle beam emitted from the charged particle beam source onto the sample, and a control unit for controlling operations of the transmission charged particle microscope. As defined herein, the transmission charged particle microscope is arranged for operating in at least two modes that substantially yield a first magnification whilst keeping said diffraction pattern substantially in focus. Said at least two modes comprise a first mode having first settings of a final projector lens of a projecting system; and a second mode having second settings of said final projector lens.

A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of magnetic field concentration members that form magnetic field concentrations adjacent the magnetic pole member. Electrons that encounter this increased magnetic field are repelled back along the same magnetic field line rather than allowed to escape. An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.

A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of magnetic field concentration members that form magnetic field concentrations adjacent the magnetic pole member. Electrons that encounter this increased magnetic field are repelled back along the same magnetic field line rather than allowed to escape. An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.

The invention discloses an electron energy loss spectroscopy analysis method for transition metal oxide microstructure characterization, and belongs to the technical field of electron microscopic analysis. The method comprises the following steps: firstly, acquiring an electron energy loss spectrum of oxygen in a transition metal oxide by using a transmission electron microscope, and then carrying out Gaussian function fitting on a near-edge fine structure of the electron energy loss spectrum of oxygen to obtain valence information of metal elements in the material; then, by means of quintic spline function fitting, extracting an oscillation signal in the oxygen electron energy loss spectrum extension fine structure, and carrying out coordinate transformation, denoising and amplitude modulation processing on the oscillation signal; and then carrying out Fourier transform on the processed oscillation signal to obtain oxygen atom coordination structure information. combining metal element valence state information and oxygen atom coordination structure information to finally obtain complete quantitative information about the transition metal oxide microstructure. The analysis method is helpful for research of transition metal oxide materials in the fields of catalysis and energy storage.

The invention belongs to the technical field of wave power generation, in particular to a wave energy power generation device. Aiming at the technical problem that wave energy power generation devicesare in contact with seawater and are liable to be corroded, according to the following scheme, the wave energy power generation device comprises two support plates; a movable body is arranged betweenthe two support plates; the middle of the movable body is provided with a cavity; two fixed bodies are welded to the bottom end of the movable body; one sides of the two fixed bodies are provided with floats; a rotating rod is arranged between the two fixed bodies; a rotating plate is welded to the bottom end of the rotating rod; and the top ends of the two fixed bodies are provided with first grooves. Through the floats, the effect that a device main body is always located above seawater can be ensured, corrosion of seawater and the sealing requirement of the device are avoided, a first generator can rotate and generate power through the rotating plate, a movable plate can drive a second generator to generate power, the second generator provides protection for the support plates, thus, the support plates are not corroded by seawater due to electron loss, a metal ball impacts a current plate, and fish is driven.

The diamond member has a rake face and a flank. The ridge between the rake face and the flank forms a cutting edge. The arithmetic mean roughness of the rake face is 0.1 μm or more and 1.0 μm or less. The diamond member is measured for energy loss associated with the excitation of K-shell electrons of carbon by electron energy loss spectroscopy using a transmission electron microscope. The energy loss is used to measure the π bond originating from the carbon π bond in the graphite phase. * The intensity of the peaks and the σ due to the σ bond of carbon in the graphite phase and the diamond phase are * The peak intensity is calculated. * The peak intensity is σ * Divide the value by the peak intensity to obtain I π* / I σ* When the diamond material on the surface of the rake face is π* / I σ* is between 0.2 and 2.

The application discloses a pressure sensor based on friction nanogenerator, which can be deployed in a wearable device for monitoring pulse fluctuation, or deployed in an electronic device with a touch screen for detecting touch action. The sensor comprises two friction layers and at least one electrode layer. The two friction layers are respectively made of materials with different electron loss and gain abilities. The surface of at least one friction layer comprises a multi-stage micro-nano structure for inducing equal and opposite net charges corresponding to the applied pressure on the two friction layers under pressure. The multi-stage micro-nano structure comprises at least two kinds of micro-nano columnar structures with different heights. The electrode layer is used for generating current based on the net charges. The application can make the pressure sensor maintain high sensitivity to large static force through the designed multi-stage structure with different heights, and can expand the measurement range of the pressure sensor, so that the sensor maintains the same or similar sensitivity under various static forces.

Systems and methods for simultaneous phase-contrast imaging and electron energy loss spectroscopy. The method and system for imaging a sample with charged particles include guiding charged particles toward the sample along a principal axis, and simultaneously detecting a first portion and a second portion of the charged particles transmitted through the sample using a first detector and a second detector, respectively. The second detector is positioned downstream of the first detector. Each of the transmitted charged particles exits the sample at an exit angle between the direction of the transmitted charged particle and the principal axis. The exit angle of the first portion of the transmitted charged particle overlaps with the exit angle of the second portion of the transmitted charged particle. In this way, complementary information, such as structural and compositional information, can be obtained simultaneously.

To provide a cathode active material for a power storage element capable of suppressing reduction of a capacity maintenance rate during a charge / discharge cycle of a power storage element, a cathode for a power storage element, and a power storage element having such a cathode active material for a power storage element, and a method of manufacturing such a cathode active material for a power storage element.SOLUTION: A cathode active material for a power storage element includes particles each containing a lithium transition metal compound and a covering layer which covers at least a part of the particles. The covering layer contains a lithium element, a niobium element, and an oxygen element. A spectrum, which is measured by electron energy loss spectroscopy, derived from the covering layer has two peaks in a range from 530 eV or more to 540 eV or less in a K absorption end of oxygen. In the two peaks, a peak intensity on a lower energy side is smaller than a peak intensity on a higher energy side.SELECTED DRAWING: Figure 3

A CMOS image sensor and method of manufacture reduces the problem of electron loss in a floating diffusion area. A method of fabricating a CMOS image sensor includes forming a gate electrode over a first conductive type semiconductor substrate. A second conductive type first diffusion layer is formed within the semiconductor substrate to be aligned with an edge of one side of the gate electrode. Aspacer may be attached to both sidewalls of the gate electrode. A first conductive type second diffusion layer may be formed within the first diffusion layer to leave a distance amounting to a widthof the spacer in-between. A second conductive type third diffusion layer may be formed within the semiconductor substrate to be aligned with an edge of the other side of the gate electrode. A first conductive type fourth diffusion layer may be formed over the third diffusion layer, and a first conductive type fifth diffusion layer may be formed under the third diffusion layer.

A single crystal diamond material comprising a single crystal diamond and an altered portion present on the outer periphery of the single crystal diamond, wherein the nitrogen atom content in the single crystal diamond is 1 ppm or more and 2000 ppm or less based on the atomic number, and the single crystal diamond material has a core electron excitation spectrum of the altered portion obtained by electron energy loss spectroscopy using a transmission electron microscope, in which an energy loss of π exists in a range of 285 eV±5 eV. * Maximum intensity of the peak Iπ * and the energy loss is in the range of 291±5 eV. * Maximum intensity of the peak Iσ * Ratio to Iπ * / Iσ * is 0.15 or more, and in the altered portion, the percentage {N1 / (N1+N2)}×100 of the number N1 of primary carbon atoms to the sum N1+N2 of the number N1 of primary carbon atoms constituting amorphous carbon and the number N2 of secondary carbon atoms constituting graphite is 90% or more.

A method for measuring an atomic scale microscopic thermal conductivity, said method being based on a focused ion beam-based sample preparation method and scanning transmission electron microscopy-electron energy loss spectroscopy. A temperature gradient is generated by locally heating a sample in a scanning transmission electron microscope; the temperature is measured in the electron microscope by means of electron energy loss spectrums; local heating in a nano-scale region of a sample is realized, and a stable temperature field having a large temperature gradient is constructed; and atomically resolved phonon spectrum detection and temperature measurement are realized in space. Local temperature information and a relative value of a microscopic thermal conductivity can be measured at an atomic scale, so that the quantitative analysis of the microscopic thermal conductivities of structures at different positions inside the sample can be performed; and the present invention has the advantages of accurate measurement, high spatial resolution, capability of studying nano-scale thermal transport and micro-zone thermal conductivity, etc., and is suitable for samples having complex structures and a plurality of material systems.

The invention relates to a preparation method of a cellulose / animal hair composite material for a friction nano-generator and a self-driving sensor and application thereof in nano new energy resources. The preparation method of the electropositive cellulose / animal hair composite material for the friction nano-generator and the self-driving sensor is simple, and the prepared cellulose / animal hair composite material for the friction nano-generator and the self-driving sensor has strong electron loss ability, low cost and high performance. The friction nano-generator prepared by use of the prepared cellulose / animal hair composite material as a positive electrode material can be used in energy devices or in sensors. The friction nano-generator prepared by use of the prepared cellulose / animal hair composite material has high output voltage, high power and stable output; and the prepared self-driving sensor has high sensitivity and stable performance. The cellulose / animal hair composite material belongs to the field of nano new energy.

The invention discloses an ungrounded aircraft charged particle sowing platform, and belongs to the field of artificial influence weather. An aircraft for spreading charged particles needs to continuously emit charges to the outside, and if no ground wire neutralizes the charges, electron loss and positive charge accumulation are caused. A charged particle generation module is used for emitting positive and negative charges to the outside, a power supply control module is used for monitoring the current flowing to the positive and negative electrodes in the charged particle generation module, and the voltage of the high-voltage power supply is adjusted on the premise of ensuring that the power is as high as possible, so that the current values of the positive and negative electrodes can always keep dynamic balance; and ground wires are avoided. Because the aircraft is not limited by a grounding traction piece and a ground wire any more, charged particles can be spread in a large area in an open space, and the flexibility and the action effect of tasks such as electro-catalytic rainfall, air purification and fog dissipation are improved.

Systems, devices, methods, algorithms, and techniques are described for energy loss spectra at relatively large energy losses. A method includes modifying an acceleration voltage of a system source from a first energy to a second energy. The method may include modifying one or more optical elements of the system according to the calibration of the second energy. The method may include generating a set of operating conditions for the projection optics system. The method may include modifying one or more elements of the projection optics system to at least partially comply with the set of operating conditions. The method may include modifying a condenser lens of the system in accordance with focusing a charged particle beam onto a sample location. The method may also include modifying the acceleration voltage from the second energy to the first energy.

To provide an image noise reduction method, an electron energy loss spectroscopy method, and an analysis apparatus that reduce the effort required to remove noise from measurement images before deconvolving the instrument function. [Solution] This is an image noise reduction method in which a computer performs the following steps: a learning condition determination step, which determines the learning conditions for machine learning the noise reduction model based on a generated image from which noise has been removed using a noise reduction model trained with the Noise2Void algorithm and an analyzed image from which the generated image has been subjected to inverse convolution of the device function; a machine learning step, which performs machine learning of the measured image, which is the training data, using the Noise2Void algorithm according to the determined learning conditions; and a noise reduction step, which removes noise from the measured image, which is the analysis data, using the noise reduction model trained in the machine learning step, before performing inverse convolution of the device function from the measured image, which is the analysis data.