41 results about "Electron loss" patented technology

An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and / or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

The invention discloses a photovoltaic material with a thin-layer perovskite structure and a preparation method for the photovoltaic material, belongs to the field of the photovoltaic material, and particularly belongs to the field of the photovoltaic material with the perovskite structure. An inducer is added in a synthetic process of a crystal with a perovskite structure at a proper temperature and pH value to enable the original crystal with a cubic crystal system perovskite structure to distort so as to obtain a crystal with a thin-layer stacked perovskite structure. The preparation method provided by the invention is simple in process and easy to operate; the obtained crystal with the thin-layer stacked perovskite structure is high in electron transmission efficiency; and when the photovoltaic material with the thin-layer perovskite structure is applied to a solar cell, the solar cell is high in photoelectric conversion rate; and in addition, the photovoltaic material is low in electron loss and high in transmission efficiency.

The invention discloses a magnetic circuit designing method capable of adjusting the magnetic interface form of a magnetic conductive column Hall thruster, relates to a magnetic circuit structural design technology for the magnetic interface form of the Hall thruster, and aims to solve the problems of high electron loss, low electron utilization efficiency and low thruster discharging efficiency due to a magnetic interface existing in an existing magnetic conductive column Hall thruster. According to the magnetic circuit designing method, upper side shells or lower side shells are added on themagnetic conductive column Hall thruster; the positions, heights and thicknesses of the upper side shells or the lower side shells are changed to realize the adjustment of the form of the magnetic interface; the upper side shells are added in order to increase the angle between the magnetic interface and the axis of the thruster; the lower side shells are added in order to reduce the angle between the magnetic interface and the axis of the thruster; the upper side shells are arranged on the outer side of an outer magnet exciting coil at intervals, and are in contact with the outer edge of anouter magnetic pole; and the lower side shells are arranged on the outer side of the outer magnet exciting coil at intervals, and are in contact with the outer edge of a bottom plate. The magnetic circuit designing method has the beneficial effects of reducing the electron loss, improving the electron utilizing efficiency, and realizing high efficiency of the thruster.

A method and system are disclosed for improving characteristic peak signals in electron energy loss spectroscopy (EELS) and energy dispersive x-ray spectroscopy (EDS) measurements of crystalline materials. A beam scanning protocol is applied which varies the inclination, azimuthal angle, or a combination thereof of the incident beam while spectroscopic data is acquired. The method and system may be applied to compositional mapping.

The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms. When employing such beams, the addition of electrons or negative ions for neutralizing the effects of space charge is often crucial for achieving success. Without this supplement, ion beams can ‘blow-up’ causing loss of intensity and disruption of beam focusing. In the present disclosure, methods are presented for introducing and constraining neutralizing low-energy electrons and negative ions within the boundaries of ribbon beams within regions of magnetic field deflection. Apparatus is described for maintaining neutralization based upon a reduction of electron losses, plasma bridge connections and secondary electron production. As part of plasma introduction to the deflection region a novel cryogenic pumping apparatus selectively removes neutral atoms from a plasma stream.

Adjustable resolution electron energy loss spectroscopy methods and apparatus are disclosed herein. An example method includes operating an electron microscope in a first state, the first state including operating a source of the electron microscope at a first temperature, obtaining, by the electron microscope, a first EELS spectrum of a sample at a first resolution, the first resolution based on the first temperature, operating the electron microscope in a second state, the second state including operating the source of the electron microscope at a second temperature, the second temperature different than the first temperature, and obtaining, by the electron microscope, a second EELS spectrum of the sample at a second resolution, the second resolution based on the second temperature, wherein the second resolution is different than the first resolution.

The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms. When employing such beams, the addition of electrons or negative ions for neutralizing the effects of space charge is often crucial for achieving success. Without this supplement, ion beams can ''blow-up'' causing loss of intensity and disruption of beam focusing. In the present disclosure, methods are presented for introducing and constraining neutralizing low-energy electrons and negative ions within the boundaries of ribbon beams within regions of magnetic field deflection. Apparatus is described for maintaining neutralization based upon a reduction of electron losses, plasma bridge connections and secondary electron production. As part of plasma introduction to the deflection region a novel cryogenic pumping apparatus selectively removes neutral atoms from a plasma stream.

The invention relates to low-delay-pulse, low-crosstalk and high-collection-efficiency micro-channel plate. The micro-channel plate comprises a two-dimensional array composed of a plurality of parallel channels. An input electrode layer is plated on the upper end surface of the two-dimensional array. An output electrode layer is plated on the lower end surface of the two-dimensional array. The improvement of the invention is embodied as an input port arranged in the input electrode layer and an output port arranged in the output electrode layer. The input port is communicated with the upper ends of the channels, and the output port is communicated with the lower ends of the channels. The input port is gradually reduced from top to bottom, so that the opening area of the channels of the micro-channel plate is larger than 90%. The surface of the input electrode is covered with a thin film with a high secondary electron emission coefficient. According to the micro-channel plate, the opening area of micro-channels is large, so that the probability of electrons entering the channels is increased. The collecting efficiency is improved. The thin film made of the high-secondary electron emission material and covered on the surface of the electrode can reduce the probability of electron loss falling on the surface of the electrode. As a result, the collecting efficiency is further improved.

A process for fabricating non-volatile memory by tilt-angle ion implantation comprises essentially the steps of implanting sideling within a nitride dielectric layer heterogeneous elements such as, for example, Ge, Si, N2, O2, and the like, for forming traps capable of capturing more electrons within the nitride dielectric layer such that electrons can be prevented from binding together as the operation time increased; etching off both ends of the original upper and underlying oxide layers to reduce the structural destruction caused by the implantation of heterogeneous elements; and finally, depositing an oxide gate interstitial wall to eradicate electron loss and hence promote the reliability of the device.

The invention belongs to the field of electronic components and discloses a packaging film for the electronic components. The packaging film is prepared from ethylene-vinyl acetate copolymer, silane coupling agent, rosin resin, plant ash, illite, stearic acid, zeolite powder and fatty acid polyglycol ester. The packaging film is a thin film being 10-100micron in thickness or a coating being 30-100micron in thickness; by treatment at 200DEG C for one hour, the elongation of the packaging film is lower than 4.5% while the tensile strength of the packaging film is higher than 56MPa at 30DEG C, so that the packaging film is excellent in mechanical property and capable of strongly protecting the electronic components from physical and electron loss caused by external or other surrounding electronic components after packaging the electronic components; the vapor permeation rate is lower than 0.03g / m<2> / 24h, so that the packaging film has an excellent waterproof and damp-proof function and is capable of protecting the electronic components from water damage in storage, transport and utilization after packaging the electronic components, and oxidative corrosion of the electronic components can be greatly decelerated.

An electron microscope capable of producing EELS (electron energy-loss spectroscopy) has a spectral position correcting signal supply circuit for supplying a spectral position correcting signal H to a first driver amplifier to project spectra at the center of a CCD camera. This correcting signal H corresponds to a beam deflection signal A′ supplied from a scan generator to a second driver amplifier, an excitation signal B′ supplied from an intermediate lens excitation signal supply circuit to a third driver amplifier, and another excitation signal supplied from a projector lens excitation signal supply circuit to a fourth driver amplifier.

The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms. When employing such beams, the addition of electrons or negative ions for neutralizing the effects of space charge is often crucial for achieving success. Without this supplement, ion beams can ‘blow-up’ causing loss of intensity and disruption of beam focusing. In the present disclosure, methods are presented for introducing and constraining neutralizing low-energy electrons and negative ions within the boundaries of ribbon beams within regions of magnetic field deflection. Apparatus is described for maintaining neutralization based upon a reduction of electron losses, plasma bridge connections and secondary electron production. As part of plasma introduction to the deflection region a novel cryogenic pumping apparatus selectively removes neutral atoms from a plasma stream.

A process for fabricating non-volatile memory by tilt-angle ion implantation comprises essentially the steps of implanting sideling within a nitride dielectric layer heterogeneous elements such as, for example, Ge, Si, N2, O2, and the like, for forming traps capable of capturing more electrons within the nitride dielectric layer such that electrons can be prevented from binding together as the operation time increased; etching off both ends of the original upper and underlying oxide layers to reduce the structural destruction caused by the implantation of heterogeneous elements; and finally, depositing an oxide gate interstitial wall to eradicate electron loss and hence promote the reliability of the device.

The invention relates to a transmission charged particle microscope comprising a charged particle beam source for emitting a charged particle beam, a sample holder for holding a sample, an illuminator for directing the charged particle beam emitted from the charged particle beam source onto the sample, and a control unit for controlling operations of the transmission charged particle microscope. As defined herein, the transmission charged particle microscope is arranged for operating in at least two modes that substantially yield a first magnification whilst keeping said diffraction pattern substantially in focus. Said at least two modes comprise a first mode having first settings of a final projector lens of a projecting system; and a second mode having second settings of said final projector lens.

A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of magnetic field concentration members that form magnetic field concentrations adjacent the magnetic pole member. Electrons that encounter this increased magnetic field are repelled back along the same magnetic field line rather than allowed to escape. An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.

A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of magnetic field concentration members that form magnetic field concentrations adjacent the magnetic pole member. Electrons that encounter this increased magnetic field are repelled back along the same magnetic field line rather than allowed to escape. An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.

The invention discloses an electron energy loss spectroscopy analysis method for transition metal oxide microstructure characterization, and belongs to the technical field of electron microscopic analysis. The method comprises the following steps: firstly, acquiring an electron energy loss spectrum of oxygen in a transition metal oxide by using a transmission electron microscope, and then carrying out Gaussian function fitting on a near-edge fine structure of the electron energy loss spectrum of oxygen to obtain valence information of metal elements in the material; then, by means of quintic spline function fitting, extracting an oscillation signal in the oxygen electron energy loss spectrum extension fine structure, and carrying out coordinate transformation, denoising and amplitude modulation processing on the oscillation signal; and then carrying out Fourier transform on the processed oscillation signal to obtain oxygen atom coordination structure information. combining metal element valence state information and oxygen atom coordination structure information to finally obtain complete quantitative information about the transition metal oxide microstructure. The analysis method is helpful for research of transition metal oxide materials in the fields of catalysis and energy storage.

The invention belongs to the technical field of wave power generation, in particular to a wave energy power generation device. Aiming at the technical problem that wave energy power generation devicesare in contact with seawater and are liable to be corroded, according to the following scheme, the wave energy power generation device comprises two support plates; a movable body is arranged betweenthe two support plates; the middle of the movable body is provided with a cavity; two fixed bodies are welded to the bottom end of the movable body; one sides of the two fixed bodies are provided with floats; a rotating rod is arranged between the two fixed bodies; a rotating plate is welded to the bottom end of the rotating rod; and the top ends of the two fixed bodies are provided with first grooves. Through the floats, the effect that a device main body is always located above seawater can be ensured, corrosion of seawater and the sealing requirement of the device are avoided, a first generator can rotate and generate power through the rotating plate, a movable plate can drive a second generator to generate power, the second generator provides protection for the support plates, thus, the support plates are not corroded by seawater due to electron loss, a metal ball impacts a current plate, and fish is driven.

A CMOS image sensor and method of manufacture reduces the problem of electron loss in a floating diffusion area. A method of fabricating a CMOS image sensor includes forming a gate electrode over a first conductive type semiconductor substrate. A second conductive type first diffusion layer is formed within the semiconductor substrate to be aligned with an edge of one side of the gate electrode. Aspacer may be attached to both sidewalls of the gate electrode. A first conductive type second diffusion layer may be formed within the first diffusion layer to leave a distance amounting to a widthof the spacer in-between. A second conductive type third diffusion layer may be formed within the semiconductor substrate to be aligned with an edge of the other side of the gate electrode. A first conductive type fourth diffusion layer may be formed over the third diffusion layer, and a first conductive type fifth diffusion layer may be formed under the third diffusion layer.

The invention relates to a preparation method of a cellulose / animal hair composite material for a friction nano-generator and a self-driving sensor and application thereof in nano new energy resources. The preparation method of the electropositive cellulose / animal hair composite material for the friction nano-generator and the self-driving sensor is simple, and the prepared cellulose / animal hair composite material for the friction nano-generator and the self-driving sensor has strong electron loss ability, low cost and high performance. The friction nano-generator prepared by use of the prepared cellulose / animal hair composite material as a positive electrode material can be used in energy devices or in sensors. The friction nano-generator prepared by use of the prepared cellulose / animal hair composite material has high output voltage, high power and stable output; and the prepared self-driving sensor has high sensitivity and stable performance. The cellulose / animal hair composite material belongs to the field of nano new energy.

The invention discloses an ungrounded aircraft charged particle sowing platform, and belongs to the field of artificial influence weather. An aircraft for spreading charged particles needs to continuously emit charges to the outside, and if no ground wire neutralizes the charges, electron loss and positive charge accumulation are caused. A charged particle generation module is used for emitting positive and negative charges to the outside, a power supply control module is used for monitoring the current flowing to the positive and negative electrodes in the charged particle generation module, and the voltage of the high-voltage power supply is adjusted on the premise of ensuring that the power is as high as possible, so that the current values of the positive and negative electrodes can always keep dynamic balance; and ground wires are avoided. Because the aircraft is not limited by a grounding traction piece and a ground wire any more, charged particles can be spread in a large area in an open space, and the flexibility and the action effect of tasks such as electro-catalytic rainfall, air purification and fog dissipation are improved.

A diamond tool includes a diamond at least on a cutting edge including one or two or more diamond grains including a diamond phase composed of a diamond crystal structure and a graphite phase composed of a graphite crystal structure. When a ratio Iπ* / Iσ* between an intensity of a π* peak derived from a π bond of carbon in the graphite phase and an intensity of a σ* peak derived from a σ bond of carbon in the graphite phase and a σ bond of carbon in the diamond phase is determined for the diamond grain by measuring an energy loss associated with excitation of K-shell electrons of carbon by electron energy loss spectroscopy, the ratio Iπ* / Iσ* of the diamond grain on a surface of the cutting edge is 0.1 to 2 and a ratio Iπ* / Iσ* of the diamond grain at a depth position of 0.5 μm from the surface of the cutting edge is 0.001 to 0.1.

The invention discloses a method for reducing primary electron loss in a miniature ion electric thruster. The method for reducing the primary electron loss in the miniature ion electric thruster comprises the following steps of: taking an anode at a magnetic pole in a discharge chamber of the miniature ion electric thruster as a magnetic pole anode, taking the anode at the magnetic pole in the discharge chamber of the miniature ion electric thruster as a non-magnetic pole anode, enabling the magnetic pole anode and the non-magnetic pole anode to be independent of each other, and enabling the potential of the magnetic pole anode to be lower than the potential of the non-magnetic pole anode. A structure for reducing the primary electron loss in the miniature ion electric thruster comprises a first anode, a second anode, a third anode and a fourth anode which are sequentially and fixedly arranged on the discharge chamber of the miniature ion electric thruster from bottom to top; a first magnetic pole and a second magnetic pole are fixedly arranged on the discharge chamber of the miniature ion electric thruster from top to bottom; a gap is formed between the first magnetic pole and the second magnetic pole; the first magnetic pole is flush with the fourth anode; and the second magnetic pole is flush with the second anode. According to the method for reducing the primary electron loss in the miniature ion electric thruster, the loss of primary electrons at the magnetic pole can be effectively reduced.

The invention relates to the field of quantum dot light-emitting diodes, in particular to a preparation method of a solid film, a quantum dot light-emitting device and a preparation method. The preparation method of the solid film comprises the following steps of mixing short-chain lipid organic molecules and metal oxide nanoparticles to prepare a mixed solution, and then adding alkali liquor intothe mixed solution until the mixed solution is clarified to obtain a clarified solution, and forming a film from the clarified solution and then curing. Short-chain lipid organic molecules are decomposed into alcohol and acid in the presence of alkali liquor, and hydroxyl in the alcohol and carboxyl in the acid can form hydrogen bonds with hydroxyl, carboxyl, amino, sulfydryl and the like on thesurfaces of the metal oxide nanoparticles. And electron loss caused by combination of hydroxyl, carboxyl, amino, sulfydryl and the like on the surfaces of the metal oxide nanoparticles with electronscan be avoided. The electron transmission performance can be improved. In addition, the hydrogen bonds are beneficial to preventing dehydration reaction on the surfaces of the metal oxide nanoparticles and improving the transmission performance of electrons.

The invention discloses a multilevel structure carbon material, a photocathode anticorrosive coating added with the multilevel structure carbon material and a corresponding preparation method. Firstly, a three-dimensional flower-shaped conductive carbon material with high conductivity and high specific area is synthesized through a soft template and a high-temperature carbonization method, then zero-dimensional graphene quantum dots are synthesized in situ on a two-dimensional petal-shaped carbon plate through a hydrothermal method, and a multilevel structure carbon material is formed. And then preparing an anticorrosive coating by taking a photocathode anticorrosive coating added with the multilevel structure carbon material as a surface coating and taking a graphene / zinc powder coating as a prime coating. And a layer of photocathode is added for protection, so that the anti-corrosion performance of the coating is integrally improved. Photo-induced electrons generated by the photocathode coating can be migrated to the metal surface through graphene, the corrosion potential of metal is reduced to achieve the anti-corrosion effect, and due to the fact that a large number of electrons are generated under the driving of light, even if the coating is locally damaged, compared with the metal electron loss corrosion trend, the electron protection trend still has the advantage.

Provided is a method for preparing an integral paper carbon counter electrode of a dye-sensitized solar cell. The method comprises: keeping paper at the temperature between 160 and 180 degrees centigrade; keeping paper at the temperature between 600 and 1000 degrees centigrade under the protection of N2 in order to obtain a paper carbon film; depositing cellulose colloid on a conductive substrate by using a spin-coating method or spraying method in order to obtain a cellulose colloid thin layer covering the conductive substrate; and enabling the paper carbon film to adhere to the cellulose colloid thin layer and then drying the paper carbon film and the cellulose colloid thin layer. The method may effectively solve a defect of forming a catalyst layer by bonding powder carbon material in the prior art and prevents loose carbon powders from falling from the conductive substrate. Besides an improvement in stability, complete long carbon fiber in the paper carbon film catalyst layer simultaneously provides an effective channel for introduction of electrons of an external circuit, prevents electron losses due to a binder, and enables the electrons of the external circuit to be fast transmitted to a carbon fiber surface to participate in electrolyte reduction.

Methods and arrangements for controlling the electron loss to the upper electrode, including techniques and apparatus for biasing the upper electrode more negatively to allow charged species to be trapped within the plasma chamber for a longer period of time, thereby increasing the plasma density may be increased. The induced RF signal on the upper electrode is rectified, thus biasing the upper electrode more negatively. The rectified RF signal may also be amplified, thus driving the upper electrode even more negatively, if desired.

The invention discloses a photovoltaic material with a thin-layered perovskite structure and a preparation method thereof, belonging to the field of photovoltaic materials, in particular to the field of photovoltaic materials with a perovskite structure. In the present invention, during the synthesis process of perovskite structure crystals, an inducer is added to distort the original cubic perovskite structure crystals at an appropriate temperature and pH value, thereby obtaining a thin-layered stacking form crystals with a perovskite structure. The preparation method proposed by the invention has simple process and simple operation, and the obtained thin-layered perovskite structure crystal has high electron transmission efficiency, high photoelectric conversion rate, small electron loss and high transmission efficiency when applied to solar cells.

The invention relates to the technical field of material detection, and provides a high-accuracy detection method of concentration and distribution of trace impurity elements in GaN. The method comprises the following steps that a sample is prepared, wherein the sample comprises M testing areas, thickness of the GaN in different testing areas is different, an incident electron beam is adopted to inject into a first testing area of the sample, electrons in the incident electron beam are elastically scattered and non-elastically scattered to obtain an electron energy loss spectroscopy, accordingto the electron energy loss spectroscopy, the kind and the number of impurity atoms in the first testing area are analyzed, and the second to the M testing areas are analyzed by the same method, andaccording to the number of the impurity atoms in the first to the M testing areas, the depth longitudinal distribution of the trace impurity elements in the sample is obtained. The kind and the concentration of the trace impurity elements in the semiconductor GaN can be high-accurately detected, the volume concentration detection limit can reach the ppb level, and impurity element testing accuracycan reach 10%.