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Photovoltaic material with thin layered perovskite structure and preparation method thereof

A technology of perovskite structure and photovoltaic materials, which is applied to the materials of organic semiconductor devices, photovoltaic power generation, and the manufacture/processing of organic semiconductor devices. High efficiency, good stability, and the effect of increasing the specific surface area

Inactive Publication Date: 2018-07-10
SHENZHEN ADVANCED TECH RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] According to the adjustment of the crystal form, different types of inducers can be selected, such as biomacromolecules, surfactants, organic additives, etc. After determining the appropriate inducer, it is also very important to control the reaction process , because crystal growth is a tiny and meticulous process that is prone to change, different reaction parameters will give different results, or in some cases no stable results can be obtained at all.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] Prepare dodecyltrimethylammonium bromide (DTAB) into a solution with a concentration of 36mmol / L using deionized water as a solvent, raise the temperature of the DTAB solution to 30°C, keep the temperature, and add to the DTAB under stirring Slowly add CH to the solution 3 NH 3 The γ-butyrolactone solution of I, CH in the solution 3 NH 3 The concentration of I was prepared to be 1.5mol / L, and after the dropwise addition was completed, PbI was quickly added dropwise to it 2 γ-butyrolactone solution, the solution of PbI 2 The concentration of the mixture was prepared to be 1.5mol / L. After the dropwise addition, continue to stir until the two are evenly mixed. After the mixture is heated to 70°C, the stirring is stopped, and it is left to stand for 5 minutes. After that, the temperature of the mixture is lowered at a cooling rate of 2°C / min. to 30°C, add sodium hydroxide to the mixed solution to adjust the pH value of the mixed solution to 10, then slowly stir the mixe...

Embodiment 2

[0055] Tetradecyltrimethylammonium bromide (TTAB) was prepared into a solution with a concentration of 8 mmol / L using deionized water as a solvent, and the temperature of the TTAB solution was raised to 35 ° C, and the temperature was maintained, and the TTAB solution was added to the TTAB under stirring. Slowly add CH to the solution 3 NH 3 Cl in γ-butyrolactone solution, CH in the solution 3 NH 3 The concentration of Cl is 1.2mol / L, after the dropwise addition, PbCl is quickly added dropwise to it 2 γ-butyrolactone solution, the solution of PbCl 2 The concentration of the solution is 1.2mol / L. After the dropwise addition, continue to stir until the two are evenly mixed, raise the temperature of the mixed solution to 80°C, stop stirring, let it stand for 7 minutes, and then use a cooling rate of 3°C / min to cool the mixed solution to 40°C, add potassium hydroxide to the mixed solution to adjust the pH value of the mixed solution to 12, then slowly stir the mixed solution f...

Embodiment 3

[0057] Cetyltrimethylammonium bromide (CTAB) was prepared into a solution with a concentration of 2.5mmol / L using deionized water as a solvent, the temperature of the TTAB solution was raised to 40°C, and the temperature was maintained, and the Slowly add CH to the CTAB solution 3 NH 3 DMF solution of Br, CH in the solution 3 NH 3 The concentration of Br was prepared to be 1.0mol / L, after the dropwise addition was completed, PbBr was quickly added dropwise to it 2 DMF solution, the solution of PbBr 2 The concentration of the mixture was prepared to be 1.0mol / L. After the dropwise addition, continue to stir until the two are evenly mixed. After the mixture is heated to 70°C, the stirring is stopped, and it is left to stand for 8 minutes. After that, the temperature of the mixture is lowered at a cooling rate of 5°C / min. to 40°C, add sodium hydroxide and sodium bicarbonate to the mixed solution to adjust the pH value of the mixed solution to 14, then slowly stir the mixed so...

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Abstract

The invention discloses a photovoltaic material with a thin-layered perovskite structure and a preparation method thereof, belonging to the field of photovoltaic materials, in particular to the field of photovoltaic materials with a perovskite structure. In the present invention, during the synthesis process of perovskite structure crystals, an inducer is added to distort the original cubic perovskite structure crystals at an appropriate temperature and pH value, thereby obtaining a thin-layered stacking form crystals with a perovskite structure. The preparation method proposed by the invention has simple process and simple operation, and the obtained thin-layered perovskite structure crystal has high electron transmission efficiency, high photoelectric conversion rate, small electron loss and high transmission efficiency when applied to solar cells.

Description

technical field [0001] The invention belongs to the field of photovoltaic materials, in particular to the field of photovoltaic materials with a perovskite structure. Background technique [0002] Photovoltaic materials refer to materials that can convert solar energy into electrical energy, mainly semiconductor materials that can convert solar energy into electrical energy through the "photovoltaic effect", including monocrystalline silicon, polycrystalline silicon, amorphous silicon, GaAs, InP, CdS, CdTe, etc. . Among them, the photoelectric conversion rate of silicon-based materials is relatively high, but its manufacturing cost is also high, while semiconductor materials such as gallium arsenide are scarce in raw materials, low in preparation efficiency, and poor in stability, which are greatly restricted in practical applications. [0003] Materials with a perovskite structure have been used as photovoltaic materials for the first time since 2009. The raw materials are...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/46H01L51/48
CPCH10K71/00H10K85/00H10K30/00H10K2102/00Y02E10/549
Inventor 刘丹陈乐伍
Owner SHENZHEN ADVANCED TECH RES INST CO LTD
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