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134 results about "Electron excitation" patented technology

Electron excitation is the transfer of a bound electron to a more energetic, but still bound state. This can be done by photoexcitation (PE), where the electron absorbs a photon and gains all its energy or by electrical excitation (EE), where the electron receives energy from another, energetic electron. Within a semiconductor crystal lattice, thermal excitation is a process where lattice vibrations provide enough energy to transfer electrons to a higher energy band such as a more energetic sublevel or energy level. When an excited electron falls back to a state of lower energy, it undergoes electron relaxation. This is accompanied by the emission of a photon (radiative relaxation) or by a transfer of energy to another particle. The energy released is equal to the difference in energy levels between the electron energy states.

Multi element, multi color solid state LED/laser

A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state laser having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth or transition elements.
Owner:CREE INC

Femtosecond laser-controlled silicon surface nanopillar preparation method based on dual-wavelength electronic dynamic control

ActiveCN105499792AEfficient and precise preparationAchieve optimal controlLaser beam welding apparatusMicro nanoNanopillar
The invention relates to a femtosecond laser-controlled silicon surface nanopillar preparation method based on dual-wavelength electronic dynamic control, and belongs to the technical field of femtosecond laser application. The method comprises the steps that on the basis of local instant electronic exciting dynamic control, the wave length of the fundamental frequency laser is converted into 400 nm from 800 nm through a frequency doubling technology, and the surface micro-nano structural morphology is controlled by adopting a dual-wavelength femtosecond laser, wherein a first beam generates a generic plasma lens structure (PL) on the surface of a material, a second beam generates surface plasma along the edge of the generic PL structure and generates a gradient field distributed along the center of a light spot, and then the material generates the force extruding towards the center under the action of the pulse to form a convex nanopillar structure; preparation of large-area uniform nanopillar arrays is achieved through control over a procedure of a processing platform. Compared with an existing method, the preparation method has the advantages that the nanopillar processing precision and processing efficiency are effectively improved, efficient and precise control over the crystalline silicon surface nano structure is achieved, and the application value on the aspects such as information storage and solar cells is achieved.
Owner:BEIJING INSTITUTE OF TECHNOLOGYGY

Crystal silicon surface femtosecond laser selective ablation method based on electron dynamic control

The invention relates to a crystal silicon surface femtosecond laser selective ablation method based on electron dynamic control, and belongs to the technical field of femtosecond laser application. The crystal silicon surface femtosecond laser selective ablation method based on the electron dynamic control enables laser polarization parameters and crystal lattice properties of crystal silicon materials to be integrated, through the operation that femtosecond laser rays or the included angel of elliptic polarization and monocrystal silicon is adjusted effectively, the selective induction generation of crystal silicon surface periodical ripple micro nano structures is controlled by regulating and controlling material surface instant electron excitation dynamic states, and the induction generation of the crystal silicon surface periodical ripple micro nano structures can be achieved effectively and accurately according to preliminary design. According to the crystal silicon face femtosecond laser selective ablation method based on the electron dynamic control, selective ablation control is carried out on the silicon surface periodic ripple nano structures with diamond lattice structures from the aspect of static laser irradiation and the aspect of laser direct writing, the processing accuracy and the processing efficiency of the surface processing of the silicon surface periodic ripple nano structures are improved greatly, and the application value of the method on the aspects such as information storage is high.
Owner:BEIJING INSTITUTE OF TECHNOLOGYGY

Super-Resolution Microscope

[Task] To provide a super-resolution microscope whereby the light source of pump light and erase light can be selected easily and a super-resolution can be reliably achieved through a simple and inexpensive arrangement.
[Solution of the Task] A super-resolution microscope includes an optical system (3, 4, 9) for combining a part of a first coherent light from a first light source (2) and a part of a second coherent light from a second light source (1) and focusing the coherent lights onto a sample (10), scanning means (6, 7) for scanning the coherent lights, and detecting means (16) for detecting an optical response signal from the sample (10). The microscope is configured so as to satisfy the following conditions:
σ01Ipτ≦1, and
0.65(λe/λp)≦τσdipIe
where λp is the wavelength of the first coherent light, λe is the wavelength of the second coherent light, τ is the excited lifetime in which the molecule is excited by the first coherent light from the ground state to the first electron-excited state, Ip is the maximum photon flux on the sample surface of the first coherent light, Ie is the maximum photon flux on the sample surface of the second coherent light, σ01, is the absorption cross-sectional area when the molecule is exited from the ground state to the first electron-excited state, and σdip is the fluorescence suppression cross-sectional area.
Owner:EVIDENT CORP +1

Method for measuring dual-jet direct-current arc plasma space temperature field in real time

The invention provides a method for measuring a dual-jet direct-current arc plasma space temperature field in real time, and belongs to the technical field of hot plasma temperature measurement. The method is characterized in that in a real-time measurement system, internal and external parameters of given cameras are worked out, calibration and stereo correction are conducted, two matched target images preprocessed through a set parallax deviation are obtained, the intensities of spectral lines on corresponding pixel points at the same moment are obtained from a spectrograph, a gray value-spectral line intensity mapping table is built, and the electron excitation temperature of a spatial point corresponding to the similar spectral lines is calculated through the relative intensities of the spectral lines, wherein the real-time measurement system is composed of a plasma generator, an image information acquisition device, a spectrum acquisition device and a computer, the image information acquisition device is formed by splicing the two CCD cameras, optical filters with different central wavelengths are arranged in front of lenses on the two sides, the spectrum acquisition device is mainly composed of the spectrograph, and the computer is connected with a triggering signal output card used for synchronously triggering the two CCD cameras and the spectrograph. The method is simple and feasible, the resolution ratio and temperature measurement accuracy are high, and dynamic performance is good.
Owner:TSINGHUA UNIV

Titanium alloy surface ion carbonitriding treatment device

ActiveCN112795863ALower the activation energy of the atomic reactionLower activation energyHollow article cleaningSolid state diffusion coatingTitanium alloyIon pairs
The invention belongs to the technical field of titanium and titanium alloy surface treatment and particularly relates to a titanium alloy surface ion carbonitriding treatment device. A dual-power system is adopted in the device, an auxiliary cathode is controlled by a set of direct-current power supply, ionization of argon near the auxiliary cathode can be accelerated by applying voltage to the auxiliary cathode, ion collision is excited to accelerate temperature rise, and meanwhile, a workpiece and a cavity in the furnace can be cleaned; and the negative electrode of another set of high-frequency pulse bias power supply is connected with a workpiece, and the positive electrode is grounded, so that the workpiece is in a negative potential, negative bias has an acceleration effect on the diffusion process of plasma on the surface of the workpiece, the bombardment effect of ions on the surface of the workpiece can be improved, and the adhesive force and density of a diffusion layer are enhanced. Ammonia gas and carbon dioxide serve as diffusion media, electron excitation state ions with high internal energy are formed under collision of electrons, a diffusion layer moderate in thickness and uniform in structure is prepared, and the mechanical property and the tribological property of titanium are remarkably improved.
Owner:TSINGHUA UNIV +1

Nanosecond time-resolved absorption and emission spectrum measuring device and measuring method

The invention relates to a nanosecond time-resolved absorption and emission spectrum measuring device. An excitation light source is orderly connected with a first sequence pulse generator, a working frequency coordinator, a second sequence pulse generator, and a data collector; the second sequence pulse generator is respectively connected with a light path system and a detection light source; the data collector is respectively connected with the working frequency coordinator, a first light intensity detector, a second light intensity detector, a third light intensity detector, and a monochromator; the light path system and a sample cell are also disposed between the detection light source and the monochromator. The measuring method comprises: setting the temperature of a sample, irradiating the sample by light beams emitted by the excitation light source to reach an electron excitation state, obtaining zero point time of time-resolved spectrum data by part of the light beams; after pulsed white light emitted by the detection light source passes through the sample, feeding back detection light intensity signals to the data collector, and converting the signals into absorption and emission spectra. The measuring device of the invention is equipped with a temperature controllable sample cell, and obtains spectrum data with a high signal to noise ratio.
Owner:DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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