High-precision detection method for the concentration and distribution of trace impurity elements in Gan

Abstract

The invention relates to the technical field of material detection, and provides a high-accuracy detection method of concentration and distribution of trace impurity elements in GaN. The method comprises the following steps that a sample is prepared, wherein the sample comprises M testing areas, thickness of the GaN in different testing areas is different, an incident electron beam is adopted to inject into a first testing area of the sample, electrons in the incident electron beam are elastically scattered and non-elastically scattered to obtain an electron energy loss spectroscopy, accordingto the electron energy loss spectroscopy, the kind and the number of impurity atoms in the first testing area are analyzed, and the second to the M testing areas are analyzed by the same method, andaccording to the number of the impurity atoms in the first to the M testing areas, the depth longitudinal distribution of the trace impurity elements in the sample is obtained. The kind and the concentration of the trace impurity elements in the semiconductor GaN can be high-accurately detected, the volume concentration detection limit can reach the ppb level, and impurity element testing accuracycan reach 10%.

Description

technical field

[0001] The invention relates to the technical field of material detection, in particular to a high-precision detection method for the concentration and distribution of trace impurity elements in GaN. Background technique

[0002] The third-generation semiconductor material GaN has high breakdown electric field, high thermal conductivity, significantly higher electron saturation rate than other semiconductor materials, and excellent radiation resistance. It is very suitable for making high-temperature, high-frequency and high-power electronic devices. Its power density It can reach 10 times that of the second generation GaAs material. In addition, due to its wide optical band gap, it can be used to prepare blue-green and ultraviolet light-emitting devices, short-wavelength lasers, microwave power devices, etc. However, there are also some problems with the 3rd generation semiconductors, such as impurities in GaN, which seriously affect its performance as a de...

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