CMOS image sensor and fabricating method thereof

A technology of image sensor and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., and can solve problems such as inability to provide voltage and device performance degradation
CN100592498CInactive Publication Date: 2010-02-24DONGBU HITEK CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
DONGBU HITEK CO LTD
Publication Date
2010-02-24
Estimated Expiration
Not applicable · inactive patent

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Abstract

A CMOS image sensor and method of manufacture reduces the problem of electron loss in a floating diffusion area. A method of fabricating a CMOS image sensor includes forming a gate electrode over a first conductive type semiconductor substrate. A second conductive type first diffusion layer is formed within the semiconductor substrate to be aligned with an edge of one side of the gate electrode. Aspacer may be attached to both sidewalls of the gate electrode. A first conductive type second diffusion layer may be formed within the first diffusion layer to leave a distance amounting to a widthof the spacer in-between. A second conductive type third diffusion layer may be formed within the semiconductor substrate to be aligned with an edge of the other side of the gate electrode. A first conductive type fourth diffusion layer may be formed over the third diffusion layer, and a first conductive type fifth diffusion layer may be formed under the third diffusion layer.
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Description

technical field

[0001] The present invention relates to a CMOS image sensor, in particular to a CMOS image sensor and a manufacturing method thereof. While the present invention is suitable for a wide range of applications, it is particularly well suited for solving the problem of electron leakage from floating diffusions. Background technique

[0002] According to the design rules of CMOS technology, CMOS image sensors use MOS transistors as photosensitive pixels. Around the periphery of the photosensitive area, the sensor integrates control circuits and signal processing circuits to sequentially detect outputs using MOS transistors. Thereby the CMOS image sensor is more conveniently driven in various scanning modes. Due to the compatibility of CMOS technology, the signal processing circuit can be integrated on a single chip in the CMOS image sensor, so the final product can be made smaller and cheaper. In addition, since the power consumption of CMOS image sensors is mu...

Claims

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