Crystal growth control method, device and system for shouldering process and computer storage medium

Abstract

The invention provides a crystal growth control method, device and system for a shouldering process and a computer storage medium. The method comprises the following steps: presetting crystal growth angle set values of different stages of the shouldering process and set values of crystal growth process parameters of different stages of the shouldering process; acquiring crystal diameters of different stages of the shouldering process, calculating a change value of the crystal diameter and a change value of the crystal length, and calculating a crystal growth angle value through the ratio of the change value of the crystal diameter to the change value of the crystal length; comparing the crystal growth angle value with the crystal growth angle set value to obtain a difference value, and taking the difference value as an input variable of a PID algorithm; calculating an adjustment value of a crystal growth process parameter through a PID algorithm, which serves as an output variable of the PID algorithm; and adding the adjustment value of the crystal growth process parameter and the set value of the crystal growth process parameter to obtain the process parameter of the actual crystal growth process.

Description

technical field [0001] The invention relates to the field of crystal growth, in particular to a crystal growth control method, device, system and computer storage medium used in shouldering process. Background technique [0002] Monocrystalline silicon is a semiconductor material commonly used in the manufacture of integrated circuits and other electronic components. In the process of preparing silicon single crystal, it is mainly by immersing a seed crystal with a smaller diameter into the silicon melt, and growing a fine crystal with a smaller diameter through seeding to discharge dislocations to achieve the purpose of growing zero dislocation crystals. After that, the shouldering process will be used to make the crystals grow from fine crystals to the target diameter, and then the crystals of the required size will be obtained through equal diameter growth. [0003] The shouldering process is a critical process in the crystal growth process and is the basis for obtaining...

AI Technical Summary

Problems solved by technology

However, in the actual crystal growth process, due to the use time of the thermal field, the seeding temperature, and the life of the heater, there will be some differences in each crystal growth, so if the temperature and crystal pulling speed setting cannot be adjusted in time, it will lead to the shouldering process. lose crystal structure

In addition, changes in different crystal growth conditions will also lead to differences in the shouldering process, making shouldering the most difficult part of the crystal growth process development process, requiring many attempts to find the appropriate temperature and crystal pulling speed settings

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