Manufacturing method of shallow trench isolation structure

A technology of isolation structure and manufacturing method, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as poor thickness uniformity of the silicon oxide layer of the pad, improve thickness consistency, improve stability, and avoid weaknesses. The effect of defects

Inactive Publication Date: 2010-06-16
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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  • Abstract
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Problems solved by technology

[0009] The invention provides a method for forming a shallow trench isolation structure to solve the problem of poor thickness uniformity of the pad silicon oxide layer formed in the existing method for forming a shallow trench isolation structure

Method used

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  • Manufacturing method of shallow trench isolation structure
  • Manufacturing method of shallow trench isolation structure
  • Manufacturing method of shallow trench isolation structure

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Embodiment Construction

[0035] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0036] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar extensions without violating the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.

[0037] Secondly, the present invention is described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, and it should not be limited here. ...

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Abstract

The invention relates to a manufacturing method of a shallow trench isolation structure, which comprises the following steps of: providing a substrate and sequentially arranging a pad silicon oxide layer and a hard mask layer on the substrate; arranging a trench in the substrate and respectively arranging an opening at the positions in the pad silicon oxide layer and the hard mask layer corresponding to the trench; executing a wet-oxygen oxidation process and forming a pad silicon oxide layer at the bottom and the side wall of the trench; forming a dielectric layer on the pad silicon oxide layer and the hard mask layer in the trench; and removing the dielectric layer on the hard mask layer and the hard mask layer. The invention can improve the thickness consistency of the pad silicon oxide layer in the shallow trench isolation structure.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method of a shallow trench isolation structure. Background technique [0002] With the development of semiconductor manufacturing technology to high-tech nodes, the device-to-device isolation technology in semiconductor integrated circuits has also developed from the original Local Oxidation of Silicon (LOCOS) to shallow trench isolation. The shallow trench isolation structure is formed by forming a trench on a semiconductor substrate and filling the trench with a dielectric material. For example, a Chinese patent application document with publication number CN1649122A discloses a manufacturing method for shallow trench isolation . Figure 1 to Figure 5 It is a schematic cross-sectional view of the structure corresponding to each step of the manufacturing method of the shallow trench isolation disclosed in the Chinese patent application documen...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762
Inventor 李敏郑春生
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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