Manufacturing method of shallow trench isolation structure
A technology of isolation structure and manufacturing method, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as poor thickness uniformity of the silicon oxide layer of the pad, improve thickness consistency, improve stability, and avoid weaknesses. The effect of defects
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[0035] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0036] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar extensions without violating the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.
[0037] Secondly, the present invention is described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, and it should not be limited here. ...
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