A low-temperature preparation method of carbon nanotubes

A carbon nanotube and low-temperature technology, which is applied in the field of low-temperature preparation of carbon nanotubes, can solve the problem that the growth temperature is difficult to drop to the integrated circuit process, and achieve the effects of low cost, simple preparation process, and process compatibility

Inactive Publication Date: 2011-12-07
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, most of the catalysts in the chemical vapor deposition method are prepared by magnetron sputtering or ion sputtering, and the growth temperature is difficult to drop to the temperature that the integrated circuit process can bear.

Method used

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  • A low-temperature preparation method of carbon nanotubes

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A low-temperature preparation method of carbon nanotubes, the steps are as follows

[0029] 1) Dissolve 2.91g nickel nitrate hexahydrate and 2.56g magnesium nitrate hexahydrate in 100mL ethanol to prepare a mixed solution as a catalyst precursor, and make Ni(NO 3 ) 2 and Mg(NO 3 ) 2 The concentration is 0.1mol / L Ni(NO 3 ) 2 / Mg(NO 3 ) 2 mixture;

[0030] 2) Spray the above mixed solution evenly on the glass substrate, dry it at 80°C, and place it on the sample stage of the vacuum chamber of the chemical vapor deposition (PECVD) system;

[0031] 3) Close the vacuum chamber, and use a mechanical pump and a Roots pump to evacuate. When the vacuum degree reaches below 0.1Pa, feed hydrogen gas with a flow rate of 40mL / min into the vacuum chamber. When the pressure reaches 300Pa, heat the sample stage to 400℃, Ni(NO 3 ) 2 and Mg(NO 3 ) 2 Decomposes at 400°C and forms NiO and MgO;

[0032] 4) After 2 hours of decomposition reaction, turn on the radio frequency pow...

Embodiment 2

[0037] A low-temperature preparation method of carbon nanotubes, the steps are as follows

[0038] 1) 2.91g nickel nitrate hexahydrate and 7.68g magnesium nitrate hexahydrate were dissolved in 100mL ethanol to prepare a mixed solution as a catalyst precursor, Ni(NO 3 ) 2 : Mg(NO 3 ) 2 The molar ratio is 1:3, Ni(NO 3 ) 2 The concentration is still 0.1mol / L;

[0039] 2) Spray the above mixed solution evenly on the glass substrate, dry it at 80°C, and place it on the sample stage of the vacuum chamber of the chemical vapor deposition (PECVD) system;

[0040] 3) Close the vacuum chamber, and vacuumize with a mechanical pump and a Roots pump. When the vacuum degree reaches below 0.1Pa, feed hydrogen gas with a flow rate of 30mL / min into the vacuum chamber. When the pressure reaches 300Pa, heat the sample stage to 450℃, Ni(NO 3 ) 2 and Mg(NO 3 ) 2 Decomposes at 450°C and forms NiO and MgO;

[0041] 4) After 2 hours of decomposition reaction, turn on the radio frequency po...

Embodiment 3

[0045] 1) Dissolve 2.91g nickel nitrate hexahydrate and 2.56g magnesium nitrate hexahydrate in 100mL ethanol to prepare a mixed solution as a catalyst precursor, and make Ni(NO 3 ) 2 and Mg(NO 3 ) 2 The concentration is 0.1mol / L Ni(NO 3 ) 2 / Mg(NO 3 ) 2 mixture;

[0046] 2) Spray the above mixed solution evenly on the glass substrate, dry it at 80°C, and place it on the sample stage of the vacuum chamber of the chemical vapor deposition (PECVD) system;

[0047] 3) Close the vacuum chamber, and use a mechanical pump and a Roots pump to evacuate. When the vacuum degree reaches below 0.1Pa, feed hydrogen gas with a flow rate of 40mL / min into the vacuum chamber. When the pressure reaches 300Pa, heat the sample stage to 400℃, Ni(NO 3 ) 2 and Mg(NO 3 ) 2 Decomposes at 400°C and forms NiO and MgO;

[0048] 4) After 2 hours of decomposition reaction, turn on the radio frequency power supply and apply 200W radio frequency power to form hydrogen plasma. Under the action of h...

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Abstract

A low-temperature preparation method of carbon nanotubes by a chemical vapor deposition method with Ni/MgO as a catalyst comprises the following steps: dissolving nicdel nitrate hexahydrate and magnesium nitrate hexahydrate in ethanol according to different ratios and concentrations to obtain a mixed solution of nicdel nitrate and magnesium nitrate which is used as a catalyst precursor for carbonnanotube growth; spraying the catalyst precursor solution on a substrate such as silicon, glass, and the like, placing the substrate on a sample stage of a chemical vapor deposition system, heating and decomposing to generate nickel oxide and magnesium oxide, introducing hydrogen, performing reduction in hydrogen plasma of the plasma chemical vapor deposition system to generate nickel nanometer metal particles and to obtain a Ni/MgO catalyst system; introducing hydrocarbons, preparing carbon nanotubes for various demands under different process conditions. The advantages of the invention are that the carbon nanotube preparation process is simple, high in yield, and low in synthetic temperature, and the obtained carbon nanotubes have good quality, high purity, uniform tube diameter distribution, and microelectronic process compatibility.

Description

technical field [0001] The invention relates to a preparation technology of carbon nanotubes, in particular to a low-temperature preparation method of carbon nanotubes. Background technique [0002] Since the discovery of carbon nanotubes in 1991, due to their unique mechanical, thermal and electrical properties, they have been used in nanoelectronic devices such as field effect transistors, field emission displays, single electron transistors, and integrated circuits as interconnect lines. Huge potential. But to make these electronic devices, carbon nanotubes must be synthesized at temperatures below what the substrate material can withstand. For example, carbon nanotubes are used as a field electron emission source for cold cathode flat-panel displays, so the synthesis temperature of carbon nanotubes should be lower than the transition temperature of display glass, 550°C. However, at present, the growth temperature of carbon nanotubes is generally 700-1000°C, which is mu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/02B82Y40/00
Inventor 李明吉杨保和孙佳曲长庆
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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