154results about How to "Improve heat dissipation characteristics" patented technology

An electrical connector useful for both high-current and low-current applications including a first and a second conductive terminals, in which the terminals are interconnected by a plurality of substantially rigid and elongated conductive strips and apertures or gaps are disposed between at least some of the adjacent conductive strips. The connector provides enhanced heat dissipation characteristics and is particularly useful for high current applications such as for connecting batteries, accumulators, super-capacitors and the like storage power units for electric vehicle and other applications.

A semiconductor chip package that includes a DC—DC converter implemented with a land grid array (LGA) package for interconnection and surface mounting to a printed circuit board. The LGA package integrates all required active components of the DC—DC power converter, including a synchronous buck PWM controller, driver circuits, and MOSFET devices. In particular, the LGA package comprises a substrate having a top surface and a bottom surface, with a DC—DC converter provided on the substrate. The DC—DC converter including at least one power silicon die disposed on the top surface of the substrate. A plurality of electrically and thermally conductive pads are provided on the bottom surface of the substrate in electrical communication with the DC—DC converter through respective conductive vias. The plurality of pads include first pads having a first surface area and second pads having a second surface area, the second surface area being substantially larger than the first surface area. Heat generated by the DC—DC converter is conducted out of the LGA package through the plurality of pads.

The invention relates to a heat dissipation hydrophilic coating and a preparation method thereof. The heat dissipation hydrophilic coating is prepared from, by weight, 10-40% of modified waterborne epoxy resin, 1-20% of water soluble acrylic resin, 1-10% of acrylic resin, 0.1-5% of hydrophilic surfactant, 1-5% of a carbon nanomaterial, 0.1-5% of a wetting agent, 0.1-5% of a flatting agent, 2-10% of cosolvent and the balance deionized water. Good compatible dispersion to the carbon nanomaterial is obtained through epoxy resin modification, a good film-forming property is obtained, the carbon nanomaterial can exert the characteristics of high thermal conductivity, high infrared radiance and the like, the hydrophilic coating can have the radiation and heat dissipation functions, heat dissipation and anti-corrosion performance of air conditioner aluminum foil, an aluminum foil heat exchanger and other equipment can be remarkably improved, the energy efficiency ratio is raised, and important business value is achieved.

To provide a winter-use pneumatic tire with which the performance on ice can be enhanced and tread pattern durability can be enhanced. The tread for a winter-use pneumatic tire according to the present invention has blocks which are aligned in the circumferential direction and in which are formed respectively at least one thin incision which extends substantially parallel to a circumferential direction edge and which has a widened portion at its bottom, and at least one series of small holes comprising at least two small holes which open in a ground contacting surface of the block and extend in the inward radial direction of the tire, and the at least one series of small holes is formed in a neighboring region of the circumferential direction edge, and is formed in an intermediate portion between the circumferential direction edge and the at least one thin incision.

A semiconductor device in the form of a resin sealed semiconductor package is disclosed, wherein a gate terminal connected to a gate pad electrode formed on a surface of a semiconductor chip and a source terminal connected to a source pad electrode formed on the chip surface exposed to a back surface of a sealing resin portion, a first portion of a drain terminal connected to a back-surface drain electrode of the semiconductor chip is exposed to an upper surface of the sealing resin portion, and a second portion of the drain terminal formed integrally with the first portion of the drain terminal is exposed to the back surface of the sealing resin portion. When forming the sealing resin portion in such a semiconductor device, first the sealing resin portion is formed so as to also cover an upper surface of the first portion of the drain terminal and thereafter the upper surface side of the sealing resin portion is polished by liquid honing, thereby allowing the upper surface of the first portion of the drain terminal to be exposed on the upper surface of the sealing resin portion. Both heat dissipating property and production yield of the semiconductor device are improved.

A semiconductor package which includes a die pad that is exposed through the top surface of its molded housing.

The invention discloses a deformation-free thermal extrusion method for helix slow-wave component preparation, which relates to the microwave device technology and is used for preparing a helix travelling wave tube component. The method comprises the following steps: placing and fixing a metal tube shell on an extrusion platform, feeding a helix and a medium clamping rod into an extrusion die, heating the tube shell firstly to increase the inside diameter of the tube shell, pushing the helix and the clamping rod of which positions are well fixed to the tube shell by using a push rod, then stopping heating, taking down the extrusion die, recovering the temperature of the whole component to the room temperature, and generating a great contraction force at the moment due to the contraction ofthe inside diameter of the tube shell to be applied to the helix and the clamping rod component to firmly extrude the both inside the tube shell so as to finish the preparation of the slow-wave component. Various dies required by the method can be prepared by machining of a linear cutting electro-discharge machine tool. The method not only can well improve the heat dissipation performance of theslow-wave component, but also can avoid the component structure deformation, dielectric performance reduction and high-frequency loss increment caused by the conventional assembly method.

In a semiconductor device including a semiconductor element that produces heat and a substrate on which the semiconductor element is mounted, functions of the substrate are divided between a heat dissipating substrate and a wiring substrate. The heat dissipating substrate has a relatively high thermal conductivity, and includes principal surfaces defined by electric insulators, one of which is provided with an outer conductor located thereon. The wiring substrate is mounted on the upper principal surface of the heat dissipating substrate, has a thermal conductivity lower than that of the heat dissipating substrate, and includes a wiring conductor made mainly of silver or copper and located inside the wiring substrate, the wiring conductor being electrically connected to the outer conductor. The semiconductor element is mounted on the upper principal surface of the heat dissipating substrate and disposed in a through hole of the wiring substrate.

A printed circuit board (PCB 22) capable of withstanding ultra high G forces and ultra high temperature as in a gas turbine (11). The PCB includes a substrate having a plurality of cavities (30A, 36A) formed therein for receiving components of a circuit, and conductors embedded in the PCB for electrically connecting the components together to complete the circuit. Each of the cavities has a wall (36A′) upstream of the G-forces which supports the respective component in direct contact in order to prevent the development of tensile loads in a bonding layer (37A). When the component is an integrated circuit (50), titanium conductors (63) are coupled between exposed ends of the embedded conductors and contact pads on the integrated circuit. A gold paste (51) may be inserted into interstitial gaps between the integrated circuit and the upstream wall.

The invention relates to a novel cooling design for a space synthesis amplifier, which is characterized in that a heat pipe or a high-heat-conducting-factor material is implanted into the card of the amplifier to reduce the thermal impedance of the card; and at the same time, a cooling system for liquid refrigeration is directly implanted into the amplifier to improve the cooling capacity of the system. By using the novel cooling structure in the design of the high-power amplifier, the miniaturization of the system is realized, the internal temperature of the system can be effectively reduced and the service life of the system is improved.

The invention provides an electric motor. The electric motor (5) has rotor (25) and stator (21); the stator (21) has winding (24), stator resin mould (22) and concave-convex part (40); the stator resin mould (22) is formed by molding the winding (24) by the resin material; the concave-convex part (40) has recess (40a) and stator projection (40b) arranged on the end face (22a) of the stator resin mould (22); the recess (40a) is arranged on the end face (22a) extending from the winding (24) along the axial direction. Through the construction, the invention provides an electric motor (5) for improving the heat-radiating property radiating from the stator (21).

The invention provides a method for manufacturing illuminant on a transparent sapphire heat conductive plate. The method includes two steps: manufacturing a first sapphire heat conducting light-transmitting plate for fixing chips, and manufacturing a second sapphire heat conducting light-transmitting plate which is closely attached with fluorescent powder film. The obtained illuminant on the sapphire heat conducting light-transmitting plates can be connected with an upper wiring plate and a lamp base in a grooved and clamped manner. The method is simple in technology and easy to operate, and heat generated by the chips can be transferred out by not mainly relying on heat radiation, but in a heat conducting manner via a base directly.

The invention relates to a semi-conductor surface emitting laser and a production method and applications thereof. An active layer utilizes a strain five quantum well; a lower DBR (Distributed Bragg Reflector) layer utilizes a binary N type AlAs / GaAs pair; an upper DBR layer utilizes a DBR of a general ternary N type Al0.92Ga0.08 As/Al0.12Ga0.88As; a plurality of pairs under the active layer utilize a same structure; the top utilizes a high thermal conductive ALN (Aluminium Nitride) layer; copper layers are arranged and covered on bilateral sides of the platform surface and above the platform; the size of an oxidation hole is 18 micron; and the capacitance of components are reduced through a BCB (p-bis benzene) layer. The production method of the semi-conductor surface emitting laser has the advantages of improving an integral heat dissipation level by improving processes, effectively solving the heat dissipation problem of a large power surface emitting laser, improving an stage of the power of the surface emitting laser, enabling the surface emitting laser to be improved in material character, improving the service life and working reliability of the surface emitting laser and achieving free space communication within 1-3 km.

The invention provides a portable electronic device which can make heat generated by the internal electronic components diffused from the outer surface of the housing in an efficient way. The portable electronic device comprises a housing component (1). The housing component (1) comprises a thin-wall outer wall part (2) formed on the outer surface (10) of the housing; a heat conduction sheet body (3) laminated on a part of the thin-wall outer wall part (2) back and applied for transmitting heat from the heating part (6) of the internal electronic component (5) and performing heat radiation on the outer surface (10) of the housing; and an inner wall part (4) integrally laminated on the back faces of the heat conduction sheet body (3) and the thin-wall outer wall part (2) through the curing of fusing resins.

Provided is a 3000 series aluminium alloy plate which exhibits heat-dissipation characteristics applicable to large lithium ion battery containers, and which also exhibits excellent moulding properties, shape fixability, and laser welding properties. This aluminium alloy plate is a cold-rolled annealed material which has: a component composition including over 0.2 mass% but less than 1.4 mass% of Fe, 0.5-2.0 mass% of Mn, over 0.2 mass% but not more than 1.1 mass% of Si, 0.05-1.0 mass% of Cu, and less than 0.05 mass% of Mg, the remainder comprising Al and impurities; a conductivity of over 45% IACS; a metallographic structure in which the number of second phase particles having an equivalent circular diameter of at least 2 µm is less than 1800/mm2; a 0.2% proof stress of at least 30 MPa but less than 85 MPa; and an elongation value of at least 10%. Otherwise, this aluminium alloy plate is a cold-rolled material which has: a conductivity of over 45% IACS; a metallographic structure in which the number of second phase particles having an equivalent circular diameter of at least 2 µm is less than 1800/mm2; a 0.2% proof stress of at least 90 MPa but less than 180 MPa; and an elongation value of at least 3%.

The invention relates to the technical field of semiconductor lasers, in particular to a 1.55-micron-wavelength silicon-based quantum dot laser epitaxial material and a preparation method thereof. Themethod is characterized by comprising the following steps of: 101, preparing a strip-shaped pattern mask on a monocrystalline silicon substrate; 102, etching a window of the V-shaped groove; 103, selectively growing a buffer layer in the V-shaped groove window region; 104, transversely growing a merging layer; 105, growing a strain superlattice dislocation barrier layer; 106, growing an n-type ohmic contact layer; 107, growing an n-type lower limiting layer; 108, growing a lower waveguide layer; 109, growing a multi-layer quantum dot active region; 110, growing an upper waveguide layer; 111,growing a p-type upper limiting layer; and 112, growing a p-type ohmic contact layer to complete preparation. The growth quality of the laser epitaxial material is effectively improved, and the performance of the laser is improved.

The invention discloses a preparation method of a low-thermal-resistance gallium nitride high-electron-mobility transistor epitaxial material, and belongs to the technical field of semiconductor epitaxial materials. According to the invention, the method comprises the steps: employing high-temperature chemical vapor deposition equipment for carrying out high-temperature etching on the surface of a silicon carbide substrate, so the surface of the substrate presents controllable atomic-scale step morphology; carrying out the atomic-scale aluminum nitride nucleation on silicon carbide atomic steps by utilizing a metal organic chemical vapor deposition technology; transversely and rapidly combining the aluminum nitride nucleation points in an intermittent source supply mode, and performing layered deposition, so high-quality nanoscale aluminum nitride nucleation layer growth is achieved, and the gallium nitride high-electron-mobility transistor is prepared by taking aluminum nitride as a substrate. According to the method, the thickness of the aluminum nitride nucleating layer can be greatly reduced, the interface thermal resistance introduced by the aluminum nitride nucleating layer can be effectively reduced, the heat dissipation characteristic of the gallium nitride power device can be improved, and the method has extremely important significance for improving the power performance of the gallium nitride microwave power device.