Multi-range integrated pressure sensor chip

A pressure sensor, multi-range technology, applied in the direction of measuring force, piezoelectric device/electrostrictive device, piezoelectric/electrostrictive/magnetostrictive device, etc., can solve low sensitivity, low cost, poor high temperature characteristics To achieve process compatibility, improve low-voltage sensitivity and range, improve sensitivity and temperature stability

Inactive Publication Date: 2012-11-28
SHENYANG POLYTECHNIC UNIV
View PDF6 Cites 28 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Diffused silicon has mature technology, low cost, high sensitivity, but poor high-temperature characteristics; polysilicon has low cost, good high-temperature characteristics, but lower sensitivity than the former; polysilicon nano-film has low cost, high sensitivity, and good high-temperature characteristics.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multi-range integrated pressure sensor chip
  • Multi-range integrated pressure sensor chip
  • Multi-range integrated pressure sensor chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] Below in conjunction with accompanying drawing, the present invention will be further described:

[0024] The present invention is a multi-range integrated pressure sensor chip, such as figure 1 and figure 2 As shown in , it is characterized in that it includes a silicon substrate 1, and pressure sensors of different ranges are arranged on the same silicon substrate 1, which are called small-range sensors 6 and large-range sensors 7, and each sensor consists of an etching hole 2, a membrane sheet 3 and strain resistance 4; on the upper surface of the diaphragm 3 there are four mutually symmetrical strain resistance 4 (such as figure 1 As shown, two polysilicon nano-film strain resistors 4) are arranged on the edge and center of the upper surface of the diaphragm 3 respectively, and the four strain resistors are connected by wires to form a Wheatstone bridge (constitute a differential full bridge), converting the pressure into The voltage output is used to measure the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a multi-range integrated pressure sensor chip which comprises a silicon substrate, wherein two or more pressure sensors with different ranges are arranged on the silicon substrate; each pressure sensor consists of a corrosion hole, a membrane and strain resistors; the four symmetric strain resistors are respectively arranged on the upper surface of each membrane and connected with one another through conductors to form a Wheatstone bridge; the membranes are connected with the silicon substrate to form a cavity; and the corrosion holes are formed on the supporting edges of the membranes. The multi-range integrated pressure sensor chip has the characteristics of being small in size, wide in range, high in low-voltage sensitivity, small in temperature drift coefficient and compatible in manufacturing process and integrated circuit process, can be used for multipath pressure measurement in automobiles, pressure measurement of environment control and pressure measurement in the fields of aviation systems, petrochemical industries and the like, and is suitable for popularization and application.

Description

technical field [0001] The invention mainly relates to a multi-range integrated pressure sensor chip, which belongs to the field of micro-electromechanical systems (MEMS). Background technique [0002] With the development of microelectronics technology, using the piezoresistive effect and good elasticity of semiconductor materials, semiconductor pressure sensors have been developed with integrated circuit technology and silicon micromachining technology. Due to the advantages of small size, light weight and high sensitivity, semiconductor pressure sensors are widely used in environmental control, transportation, medical inspection, aviation, petrochemical, electric power, etc. Semiconductor pressure sensors are divided into silicon piezoresistive, silicon capacitive and resonant pressure sensors according to their working principles. The former has high measurement accuracy, low power consumption and low cost and occupies the mainstream. The general structure of the silic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01L9/04G01L1/22B81B3/00
Inventor 揣荣岩王健刘斌
Owner SHENYANG POLYTECHNIC UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap