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53results about How to "Improve the efficiency of failure analysis" patented technology

Semiconductor structure for testing an MIM (Metal-Insulating medium-Metal) capacitor

A semiconductor structure for testing an MIM (Metal-Insulating medium-Metal) capacitor comprises a plurality of layers, including a first metal layer, a second metal layer, an upper pole-plate and a lower pole-plate; the first metal layer at least comprises a first circuit area and a second circuit area; the second metal layer is arranged under the first metal layer, spaced from the first metal layer through a medium layer and electrically connected with the second circuit area; the upper pole-plate is arranged in the medium layer in a position near the first metal layer and electrically connected with the first circuit area; the lower pole-plate is opposite to the upper pole-plate in the vertical direction, arranged in the medium layer in a position near the second metal layer, spaced from the upper pole-plate through an insulating layer and electrically connected with the second circuit area. The semiconductor structure is formed on a P type semiconductor substrate, and the second metal layer is electrically connected with the P type semiconductor substrate through a first closed circuit, so that a second closed circuit from the upper pole-plate to the P type semiconductor substrate is formed when an electric leakage area exists in the insulating layer; the semiconductor structure can accurately detect whether an electric leakage area exists in the MIM capacitor, is simple to manufacture and low in cost, and is especially suitable for quickly positioning the electric leakage area of a large-area MIM capacitor.
Owner:SHANGHAI HUALI MICROELECTRONICS CORP

Method for analyzing failures due to defects of ONO (silicon oxide-silicon nitride-silicon oxide) thin films of Flash products

The invention discloses a method for analyzing failures due to defects of ONO (silicon oxide-silicon nitride-silicon oxide) thin films of Flash products. The method includes thinning various layers of the upper surfaces of to-be-analyzed Flash samples and exposing first polycrystalline silicon layer regions of storage units; corroding and removing first polycrystalline silicon layers by the aid of selective chemical solution and exposing the ONO thin films; corroding and removing second polycrystalline silicon layers below the defects of the ONO thin films by the aid of the chemical solution and positioning the corroded defects of the ONO thin films; manufacturing planar samples of the defects for further observing the defects and analyzing the failures. The first polycrystalline silicon layer regions of the storage units contain the defects of the ONO thin films. The method has the advantages that the defects of the ONO thin films of the Flash products can be conveniently, accurately and finely analyzed, accordingly, the failure analysis efficiency can be greatly improved, and the method can assist in quickly increasing the yield of the Flash products and quickly improving the reliability of the Flash products.
Owner:SHANGHAI HUALI MICROELECTRONICS CORP

Display panel and crack detection method thereof and display device

The embodiment of the invention discloses a display panel and a crack detection method thereof and a display device. The display panel is provided with a display area and a non-display area. The display panel includes a dummy pixel circuit and a light emitting device connected to the dummy pixel circuit; the crack detection line is located in the non-display area, one end of the crack detection line is connected with the test terminal, the other end of the crack detection line is connected with the driving signal line, the driving signal line is connected with the dummy pixel circuit, and signals transmitted to the driving signal line by the crack detection line can control the dummy pixel circuit to drive the light emitting device to emit light. According to the technical scheme providedby the embodiment of the invention,the crack detection lines, the corresponding driving signal lines and the dummy pixel circuit are connected through the test terminals, and the test signal is transmitted to the light-emitting device connected with the dummy pixel circuit, thereby achieving the crack detection of the display panel, facilitating the implementation of a narrow-frame design, reducing the abnormality risk of a detection image, and improving the failure analysis efficiency of the display panel and the detection efficiency of a defective product.
Owner:YUNGU GUAN TECH CO LTD

Power transmission and transformation system risk early warning method

The invention discloses a power transmission and transformation system risk early warning method. The method includes the following steps that: S1, a power transmission line risk assessment establishing overall framework is established, a risk assessment model is established according to each component of a power transmission line, the quantization of state quantities is established, and the degrees of membership of the state quantities are solved; and S2, a calculation method and an evaluation standard for the correction of the risk value of the power transmission line by the operating years and operating environment of equipment and the operation status of a power grid are determined, and the aging coefficients of the components, the operating environment time coefficient and geographical position coefficient of the power transmission line are defined. With the power transmission and transformation system risk early warning method of the invention adopted, an interval of the power transmission line, where a fault occurs, can be determined more accurately, fault inspection can be performed in a targeted manner, the inspection range of line fault inspectors can be decreased, line fault inspection time can be decreased, the cause of the fault of the power transmission line can be determined more accurately, and the efficiency of fault analysis can be improved.
Owner:STATE GRID CORP OF CHINA +1

Converter fault diagnosis method based on kernel density estimation

The invention relates to a converter fault diagnosis method based on kernel density estimation. The method comprises the steps of: performing pre-processing of collected data through cubic B-spline wavelet analysis based on a mallat algorithm to obtain samples with fault features; employing a KDE fault classifier to perform offline training to select better parameters of the fault classifier and accurately dividing the normal conditions and each type of fault condition included in the training samples, and using the better parameters into a classifier network to obtain the optimal parameters;implanting the classifier network with the optimal parameters into online simulation to perform real-time online monitoring fault diagnosis of an actual circuit; and allowing the classifier network with completion of optimal parameters to distinguish known fault type samples and normal samples, complete the location of the known fault types of faults and identify the unknown faults for achievementof circuit protection in a condition of generation of unknown types of faults. The converter fault diagnosis method based on kernel density estimation can determine the health condition of the converter more accurately and more reliably, and also can improve the efficiency of the fault diagnosis of the converter.
Owner:FUZHOU UNIV +1

Auxiliary grid fault analysis system

The invention discloses an auxiliary grid fault analysis system. The auxiliary grid fault analysis system comprises a main control module, wherein the main control module is connected with a plurality of paths of voltage input modules, a plurality of paths of current input modules, a plurality of switching value input modules, a high-capacity storage module, a human-computer interface, an external communication module and an auxiliary grid fault analysis system knowledge base; the three-phase voltage, the three-phase current waveform, the effective value, the period and the frequency are displayed in real time, and the single-phase or three-phase reactive power value, the active power value and the apparent power value are displayed in real time; one to eight alternating quantities are randomly selected from all alternating analog quantity channels, and the phasor diagrams are displayed; the first phasor phase fixedly serves as the reference, other phasors are based on the first phasor phase, drawing is carried out according to the phase corresponding to the reference phasor, and the effective value and the phase angle of the phasors are displayed; the positive sequence effective value, the positive sequence phase angle, the negative sequence effective value, the negative sequence phase angle, the zero sequence effective value and the zero sequence phase angle can be displayed in real time according to three-phase voltage or three-phase current, and the auxiliary grid fault analysis system has two harmonic analysis modes.
Owner:SHANGHAI HEKAI ELECTRICAL TECH

Crystal lattice dislocation detecting method

The invention discloses a crystal lattice dislocation detecting method. The method comprises the steps that an invalid device is selected for carrying out an electrical test, a voltage-current curve of the invalid device is scanned and measured repeatedly, and whether the voltage-current curve obtained through repeated scanning becomes larger or smaller is observed; the invalid device is roasted, the voltage-current curve of the invalid device is repeatedly measured again, and whether the voltage-current curve becomes larger or smaller is observed; if it is determined that the voltage-current curve of the device is changed, emission microscope positioning is carried out, and the dislocation range is reduced further; the device is ground, a focused ion beam is used for cutting the device, and a transmission electron microscope sample is formed through physical analytical sample preparation; a common transmission electron microscope observation way is adopted for dislocation observation to obtain a dislocation image. According to the crystal lattice dislocation detecting method, the dislocation is analyzed and the dislocation position is found from the electrical analysis process to the physical analysis process, the integrated circuit device invalidation analysis efficiency is improved, and the cost is reduced.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP

Visual intelligent management system for intelligent laboratory

The invention discloses a visual intelligent management system for an intelligent laboratory, belongs to the technical field of intelligent laboratories, and aims to solve the problem that the interior of the laboratory cannot be reasonably managed by using an existing laboratory. The existing internal experiment data cannot be well recorded and stored, data disorder is easily caused, the experiment can only be performed on site, real-time teaching cannot be performed on the internet, and the visualization efficiency is low. According to the intelligent laboratory visual intelligent management system, information can be transmitted in real time, the quality of the internal environment in the experiment process is guaranteed, real-time monitoring is achieved, understanding can be carried out at any time, experimenters are reminded to carry out processing, the experiment safety is effectively guaranteed, the management efficiency can be guaranteed in real time, and the management efficiency is improved. According to the invention, comprehensive intelligent management of laboratory places, personnel, equipment, environment and safety guarantee is realized, classroom reservation information can be displayed in non-class time periods in a class schedule area, the monitoring management efficiency of the laboratory places is improved, and the convenience of real-time reservation is also ensured.
Owner:SHENZHEN UNIV

Defect point locating method of semiconductor device

The invention discloses a defect point locating method of a semiconductor device, which comprises the following steps: a probe in a defect locator is electrically connected with a device of a semiconductor chip; the device of the semiconductor chip is excited so as to enable a defect point to appear; the probe of the defect locator is used to carve an identification point in a position close to the defect point; and the position relationship between the identification point and the defect point is confirmed. According to the method provided by the invention, when the defect point in the device of the semiconductor chip appears due to excitation, the probe of the existing defect locator is used to set the identification point nearby the defect point, so the defect point can be located according to the position of the identification point and the position relationship between the identification point and the defect point. The method has the advantages that an expensive laser marking machine does not need to be adopted, the cost of failure analysis can be reduced, the existing equipment does not need to be refitted at the same time, the failure analysis can be realized conveniently and rapidly, the simplicity and the practicality are achieved, and the efficiency of the failure analysis is improved.
Owner:CSMC TECH FAB2 CO LTD
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