Crystal lattice dislocation detecting method

Abstract

The invention discloses a crystal lattice dislocation detecting method. The method comprises the steps that an invalid device is selected for carrying out an electrical test, a voltage-current curve of the invalid device is scanned and measured repeatedly, and whether the voltage-current curve obtained through repeated scanning becomes larger or smaller is observed; the invalid device is roasted, the voltage-current curve of the invalid device is repeatedly measured again, and whether the voltage-current curve becomes larger or smaller is observed; if it is determined that the voltage-current curve of the device is changed, emission microscope positioning is carried out, and the dislocation range is reduced further; the device is ground, a focused ion beam is used for cutting the device, and a transmission electron microscope sample is formed through physical analytical sample preparation; a common transmission electron microscope observation way is adopted for dislocation observation to obtain a dislocation image. According to the crystal lattice dislocation detecting method, the dislocation is analyzed and the dislocation position is found from the electrical analysis process to the physical analysis process, the integrated circuit device invalidation analysis efficiency is improved, and the cost is reduced.

Description

technical field [0001] The invention relates to the field of integrated circuit design, in particular to a method for detecting lattice dislocations in integrated circuit failure analysis. Background technique [0002] During the manufacturing process of integrated circuit chips, dislocations appear inside the chip due to stresses that occur during temperature unevenness, lattice mismatch, doping, deposition, etc. The so-called dislocation refers to an internal microscopic defect of a crystalline material, that is, a local irregular arrangement of atoms (crystallographic defect). From a geometric point of view, dislocation is a kind of line defect, which can be regarded as the dividing line between the slipped part and the non-slip part in the crystal. Its existence has a great influence on the physical properties of materials, especially the mechanical properties. Such as figure 1 As shown, it is a typical location where dislocations are likely to occur, such as dislocati...

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Problems solved by technology

Dislocations can also cause electrical failures. Due to the need for failure analysis of the cause of device failure, it is often difficult to know in advance whether it is caused by dislocations, and it is difficult to find the location of dislocations through physical analysis.

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