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Failure analysis positioning method

A technology of failure analysis and positioning method, applied in the direction of analyzing materials, material analysis by optical means, measuring devices, etc., can solve the problems of time-consuming, complex and cumbersome processes, etc., to improve efficiency, fast failure analysis, fast The effect of positioning and analysis

Inactive Publication Date: 2018-11-30
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, with the improvement of chip integration and the continuous increase of metal layers, a hot spot on the imaging contains hundreds or even more transistors. The process of accurately locating the failure point through OBIRCH technology and EMMI technology is complicated and cumbersome. takes a lot of time

Method used

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Embodiment Construction

[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0029] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0030] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0031] Such as figure 1 As shown, this embodiment relates to a failure analysis and location method.

[0032] ...

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Abstract

The invention discloses a failure analysis positioning method, and belongs to the technical field of semiconductors. The failure analysis positioning method comprises the following steps: steps S1, arranging a target area in a repetitive structural region in advance; step S2, arranging a dot-matrix graphic on the surface of a tested chip by taking the target area as a center, the area of composition dots in the dot-matrix graphic is in positive correlation with the distance between the composition dots and the target area; step S3, performing failure analysis on the target area to position failure dots in the target area, positioning the target area according to the dot-matrix graphic before performing the failure analysis. The beneficial effect of the failure analysis positioning method is that the time of grasping the failure dots can be reduced, so that the failure analysis can be performed quickly, the efficiency of the failure analysis is improved, and the fast positioning and analysis of the failure dots in the repetitive structural area on the chip are realized.

Description

technical field [0001] The invention relates to a technology in the field of semiconductors, in particular to a failure analysis and positioning method. Background technique [0002] Failure analysis refers to the process of identifying the failure mode, determining the failure cause, mechanism and failure evolution through systematic research on the product and its structure, use and technical documents after the product fails. Integrated circuits will fail during development, production and use, and defects in design and production can be found through failure analysis. [0003] The electrical failure analysis (EFA, Electrical Failure Analysis) of the chip is an important part of the failure analysis. [0004] The current mainstream EFA positioning technology includes EMMI (Emission Microscope, low-light microscope) technology and OBIRCH (Optical Beam Induce Resistance Change, optical beam induction material resistance change region test) technology. [0005] EMMI techno...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/956
CPCG01N21/956
Inventor 翁浚婧黄楚楚李金纪晓娜
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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