Manufacturing method for polymer light-emitting diode including electron transfer layer

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of light-emitting materials, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., and can solve the problems that the light-emitting performance of light-emitting diodes cannot meet the needs, the preparation process of flexible light-emitting diodes is complicated, and the cost is high.

Inactive Publication Date: 2013-04-10
JIANGSU WINAD LIGHTING TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are still some defects in light-emitting diodes in the prior art. The preparation process of flexible light-emitting diodes is complicated, the cost is high, and the luminous performance of the prepared light-emitting diodes cannot meet the needs. , high efficiency, simple preparation process and low cost

Method used

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  • Manufacturing method for polymer light-emitting diode including electron transfer layer
  • Manufacturing method for polymer light-emitting diode including electron transfer layer
  • Manufacturing method for polymer light-emitting diode including electron transfer layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0078] Polymer Ia: 3-(N-isopropyl-4-methylcyclohexylcarboxamido)-7-phenylbenzo[b]thiophene-2-carboxylic acid

[0079]

[0080] Firstly, intermediate IIIa: 3-amino-7-bromobenzo[b]thiophene-2-methyl carboxylate is synthesized, and the target polymer is synthesized from intermediate IIIa.

[0081]

[0082] According to the synthetic route of the present invention, 3-bromo-2-fluorobenzonitrile (5.0g, 25.1mmol) was dissolved in 20.0ml DMF under the protection of nitrogen, and sodium carbonate (5.3g, 50.0mmol) was added and cooled to 0℃. Under stirring conditions, methyl thioglycolate (2.9 g, 27.5 mmol) was added dropwise, and the reaction solution was raised to room temperature and stirred overnight. After adding water, a white solid precipitated, filtered, washed the solid with water and petroleum ether, and dried to obtain a white powder (6.4 g) with a yield of 89.5%.

[0083] 1 H NMR(CDCl 3 , 300MHz) δ7.64-7.60(m, 2H), 7.29-7.24(m, 1H), 5.86(br, 2H), 3.90(s, 3H); ESI-MS m / z 284(M-H) -...

Embodiment 2

[0100] Polymer Ib: 3-(N-isopropyl-4-methylcyclohexylcarboxamido)-6-phenylbenzo[b]thiophene-2-carboxylic acid

[0101]

[0102] Synthesis of intermediate IIIb

[0103] Methyl 3-amino-6-bromobenzo[b]thiophene-2-carboxylate

[0104]

[0105] According to the synthetic route of the present invention, 4-bromo-2-fluorobenzene cyanide (5.0g, 25.1mmol) was dissolved in 20.0ml DMF under the protection of nitrogen, sodium carbonate (5.3g, 50.0mmol) was added and cooled to 0°C, while stirring Methyl thioglycolate (2.9g, 27.5mmol) was added dropwise under the conditions of, and the reaction solution was raised to room temperature and stirred overnight. After adding water, a white solid precipitated, filtered, washed the solid with water and petroleum ether, and dried to obtain a white powder (6.0 g) with a yield of 83.9%.

[0106] 1 H NMR(CDCl 3 , 300MHz) δ 7.88 (s, 1H), 7.48 (s, 2H), 5.88 (s, 2H), 3.89 (s, 3H); ESI-MS m / z 284 (M + -H + ).

[0107] The following steps follow the method for prepar...

Embodiment 3

[0110] Polymer Ie: 3-(nitrogen-4-methylcyclohexylcarboxamido)-7-phenylbenzo[b]thiophene-2-carboxylic acid

[0111]

[0112] According to the method of preparing polymer Ia in Example 1, polymer Ie can be prepared.

[0113] 1 H NMR (DMSO-d6, 300MHz) δ9.99 (s, 1H), 7.82-7.79 (m, 3H), 7.67-7.59 (m, 5H), 2.51-2.48 (m, 1H), 2.08-2.04 (m , 2H), 1.88-1.84 (m, 2H), 1.66-1.44 (m, 3H), 1.12-1.07 (m, 2H), 1.00 (d, J=6.3 Hz, 3H);

[0114] ESI-MS m / z 392(M-H) - .

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Abstract

The invention discloses a manufacturing method for a polymer light-emitting diode including an electron transfer layer. The method is simple in preparation technology, low in cost and high in luminous efficiency of the produced light-emitting diode. The manufacturing method for polymer light-emitting diode comprises includes preparation of a substrate, an anode, a hole transport layer, a polymer light-emitting layer, an electron transfer layer and a cathode in sequence. The light-emitting diode adopts the polymer light-emitting layer as a high-efficiency luminescence polymer so that the luminescence property of the light-emitting diode is greatly improved. Meanwhile, the manufacturing method for polymer light-emitting diode has the advantages of being simple in preparation technology, low in cost, and is suitable for the preparation of a cathode of a flexible display.

Description

Technical field [0001] The invention relates to a method for manufacturing a photoelectric device, in particular to a method for manufacturing a light emitting diode. Background technique [0002] Polymer light-emitting diodes have the advantages of low material cost, low driving voltage, active light emission, wide viewing angle, low energy consumption, etc., and are easier to be molded in large areas. The light-emitting wavelength can be adjusted through molecular structure design. Resolving full-color flat-panel displays can also be applied to polymer solar cells. [0003] When a forward bias is applied to both ends of a polymer light-emitting diode, holes are injected from the positive electrode to the valence band of the polymer light-emitting layer and migrate to the negative electrode, and electrons are injected from the negative electrode to the conduction band of the polymer light-emitting layer and migrate to the anode. Holes and electrons trap each other during the migr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/54C07D333/70C07D409/04C09K11/06
Inventor 虞浩辉周宇杭吕锁方顾忠杰
Owner JIANGSU WINAD LIGHTING TECH
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