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High-luminous decay resistance nitride and nitrogen oxide fluorescent materials and preparation method thereof

A nitrogen oxide and fluorescent material technology, applied in the field of fluorescent materials, can solve the problems of large uncertainty of metering ratio, large fluctuation of material luminous brightness and chromaticity coordinates, and narrow half-peak width of luminous efficiency.

Inactive Publication Date: 2015-10-07
HANGZHOU YINGHE PHOTOELECTRONICS MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The overall performance of this material is good, but the uncertainty of its metering ratio is large, which makes the luminous brightness and chromaticity coordinates of the material fluctuate greatly.
[0006] Japanese patent applications JP 2007 039 591, JP 2007 326 981, Taiwan patent application TW 2012 45 414 and Chinese patent application CN 101 146 891 disclose a green emitting β-sialon material Si 6-z al z o z N 8-z :Eu(0<z<4.2), this material has high luminous efficiency and narrow half-peak width, and is a good material for LED backlight and display, but it is difficult to synthesize this material in mass production, and the luminous efficiency and light attenuation in mass production needs to be further improved
US patent application US 2013 343 059, Taiwan patent application TW 2013 35 338, Japanese patent application JP 2013 249 466, JP 2013 227 587 disclose a green emission alkaline earth metal oxynitride material Sr 3 al 3 Si 13 o 2 N 21 :Eu, this material still has the problems of mass production synthesis difficulty, luminous efficiency and light attenuation under mass production need to be further improved

Method used

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  • High-luminous decay resistance nitride and nitrogen oxide fluorescent materials and preparation method thereof
  • High-luminous decay resistance nitride and nitrogen oxide fluorescent materials and preparation method thereof
  • High-luminous decay resistance nitride and nitrogen oxide fluorescent materials and preparation method thereof

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Effect test

Embodiment 1

[0058] raw material

[0059] First, under the protection of inert gas, the metal elemental Sr and Eu are treated in flowing nitrogen at a temperature of 500 ° C to 1000 ° C to obtain Sr 3 N 2 and EuN precursor nitride, and then the above raw materials were weighed in a molar ratio in an inert gas-protected glove box, and then thoroughly ground and mixed uniformly. The mixture is then loaded into a boron nitride or molybdenum crucible, placed in a gas pressure sintering furnace, under N 2 Calcination in atmosphere at 0-5 atmospheric pressure, 1200-1600°C for 6 hours. After the sintered body is cooled, it is pulverized and ground to obtain the silicon carbide-enhanced composite fluorescent material Sr with red luminescence in the present invention 1.95 Si 5 N 7.6 C 0.4 : 0.05Eu 2+ , 0.03F - 0.3Ag. figure 1 It is the excitation and emission spectrum diagram of the fluorescent material of Example 1, and its emission wavelength is at 600nm.

Embodiment 2

[0064] raw material

[0065] First, under the protection of an inert gas, the metal elemental Ca and Eu are treated in flowing nitrogen at a temperature of 500 ° C to 1000 ° C to obtain Ca 3 N 2 and EuN precursor nitride, and then the above raw materials were weighed in a molar ratio in an inert gas-protected glove box, and then thoroughly ground and mixed uniformly. The mixture is then loaded into a boron nitride or molybdenum crucible, placed in a gas pressure sintering furnace, under N 2 Calcination in atmosphere at 0-10 atmospheric pressure, 1500-1800°C for 6 hours. After the sintered body is cooled, it is pulverized and ground to obtain the multi-phase fluorescent material Ca enhanced by silicon carbide with red light emission in the present invention. 0.99 AlSiN 2.85 C 0.15 : 0.01Eu 2+ , 0.03F - · 0.15Ag. Figure 4 It is the excitation and emission spectrum diagram of the fluorescent material of embodiment 2, and its emission wavelength is at 650nm.

Embodiment 3

[0070] raw material

[0071] Ag

[0072] Firstly, after weighing the above raw materials according to the molar ratio in an inert gas-protected glove box, they are fully ground and mixed evenly. The mixture is then loaded into a boron nitride or molybdenum crucible, placed in a gas pressure sintering furnace, under N 2 Calcination in the atmosphere at 5-10 atmospheric pressure, 1800-2200°C for 3 hours. After the sintered body is cooled, it is pulverized and ground to obtain the SiC-enhanced composite fluorescent material Si with green luminescence in the present invention. 5.75 Al 0.25 o 0.25 N 7.65 C 0.1 : 0.001Eu 2+ · 0.15Ag. Figure 7 It is the excitation and emission spectrum diagram of the fluorescent material of embodiment 3, and its emission wavelength is at 538nm.

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Abstract

The invention provides high-luminous decay resistance nitride and nitrogen oxide fluorescent materials and a preparation method thereof. The high-luminous decay resistance nitride and nitrogen oxide fluorescent material has a general formula of M1aM2bOxNy-zCz: alpha Re, beta R. gamma A. The nitride or nitrogen oxide fluorescent material is a composite structure comprising a nitride or nitrogen oxide fluorescent phase and inert metal particles existing in the nitride or nitrogen oxide fluorescent phase, the lattice structure of the nitride or nitrogen oxide fluorescent phase has Si-C bonds replacing a part of Si-N bonds, the inert metal particles in the composite structure can obviously improve fluorescent phase luminescence performances, and the Si-C bonds with higher rigidity in the fluorescent phase replaces a part of Si-N bonds so that rigidity of the fluorescent phase lattice structure is improved and luminous decay resistance of the fluorescent phase is obviously improved. The nitride or nitrogen oxide fluorescent material is prepared by a high-temperature solid phase reaction method improved by silicon carbide reinforcement and inert metal particle addition, and the nitride or nitrogen oxide fluorescent material can emit lights from blue lights to red lights after UV-blue and green light excitation and can be used in manufacture of a LED device.

Description

technical field [0001] The invention relates to a nitride and oxynitride fluorescent material with enhanced structure and improved light decay resistance and a preparation method thereof, in particular to a fluorescent material for white light and multi-color light-emitting devices including semiconductor light-emitting elements (LEDs) fluorescent material. Background technique [0002] In LED lighting technology, the blue light chip is mainly used to excite the yellow-emitting phosphor to produce yellow light, and the yellow light is mixed with the rest of the blue light to obtain white light. At present, the yellow phosphor mainly includes the rare earth ion-activated garnet structure material (Y, Gd) disclosed in the US patent US 5 998 925 3 (Al, Ga) 5 o 12 : Ce, (referred to as YAG) and the rare earth ion-activated alkaline earth metal orthosilicate material (Sr, Ba, Ca) disclosed in US 7 267 787 2 SiO 4 :Eu. [0003] However, in the above-mentioned technologies, t...

Claims

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Application Information

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IPC IPC(8): C09K11/65
Inventor 邓华支波周炯
Owner HANGZHOU YINGHE PHOTOELECTRONICS MATERIALS
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