LED with the current transfer penetration-enhanced window layer structure

Abstract

This invention relates to one light diode of current streghening window layer structure in semiconductor photo electricity technique, which comprises top electrode, current extensive layer, top limit layer, source area, down limit layer, buffer layer, underlay, down electrode, DBR reflection layer, wherein, the top electrode ad current extensive layer are set with conductive transparent layer; the current block layer is set on or down extensive layer to form current transporting window layer by transparent layer, current extensive layer and current block layer.

Description

technical field [0001] The invention relates to a current transport antireflection window layer structure introduced in a light emitting diode (LED), relates to a novel LED device structure, and belongs to the technical field of semiconductor optoelectronics. Background technique [0002] At present, the design method and existing problems of ordinary front-mounted light-emitting diodes: metal-organic chemical vapor deposition (MOCVD) is generally used for epitaxial growth. The device structure is shown in Figure 1, including vertical stacking growth from top to bottom. The upper electrode 10, the current spreading layer 20, the upper confinement layer 30, the active region 400, the lower confinement layer 50, the buffer layer 60, the substrate 70, and the lower electrode 80. By injecting current, electron-hole pairs radiate and recombine in the active region to emit light, and the resulting photons are emitted from the front of the device. The three main problems with this...

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Problems solved by technology

[0003] 1. The absorbing substrate (such as GaAs, Si, etc.) has a strong absorption of the light generated by the luminescent material (such as AlGaInP, GaN, ZnO, etc.), so that the light emitted to the direction of the substrate is almost completely absorbed, and finally in the form of heat issued, seriously affecting the further improvement of device performance;

[0004] 2. The refractive index of the window layer material is quite different from that of air. Only a small part (about 5%) of the light emitted to the upper surface of the device can be emitted out of the body, and most of the rest of the light is reflected back to be The substrate absorbs, and the light extraction efficiency is very low;

With regard to solving the problem of high current density under the electrode, someone abroad has proposed a method of making a current blocking layer between the upper confinement layer and the current spreading layer, as shown in Figure 5, this method effectively blocks the current from the electrode directly to the Lower transport, increased current expansion, and improved luminous efficiency, but the processes they use are almost all secondary epitaxy methods, which are high in cost and expensive in equipment

Although the four methods mentioned above can solve the current problems of light-emitting diodes from a certain aspect, they cannot solve the three existing problems at the same time.

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