Epitaxy production method of light emitting diode (LED)

Abstract

An epitaxy production method of a light emitting diode (LED) relates to a semiconductor technology field. A low temperature aluminum nitride gallium indium nucleating layer, an unintended doped gallium nitride layer, a doping gallium nitride layer, a doped GaN and non-doped GaN alternative periodic structure layer, an InGaN / GaN of multiple quantum well luminescence layer and a doped gallium nitride layer are successively grown on a substrate. In the invention, the doped GaN and non-doped GaN alternative growing periodic structure is inserted between the doping GaN and a multiple quantum well luminescence region so that internal capacitance of a GaN-based LED device can be increased and a current expansion ability of the GaN-based LED can be improved. Therefore, antistatic performance can be improved; a working voltage of the GaN-based LED can be reduced and a luminous efficiency can be raised.

Description

technical field [0001] The invention belongs to the technical field of semiconductor production, in particular to the epitaxial structure design and growth method of gallium nitride-based light-emitting diodes. Background technique [0002] The current semiconductor lighting technology based on gallium nitride-based light-emitting diodes (LEDs) is penetrating into all aspects of social life, such as landscape lighting, special lighting, and liquid crystal backlight lighting. However, due to the inherent defects, high dislocation density, and poor material quality of III-nitrides, semiconductor lighting devices based on III-nitrides have poor antistatic ability, and the current expansion capability of traditional positive-mounted LED devices is poor. Two aspects greatly limit its further entry into the high-end application market. [0003] For example, adding Zener diodes during packaging, electrostatic rings during operation, etc., and adding various insertion layers into t...

AI Technical Summary

Problems solved by technology

[0009] The present invention solves the problems of small internal capacitance and poor current expansion capability of GaN-based LEDs by inserting a modulated doped nGaN / uGaN periodic structure between nGaN and the light-emitting layer, so as to increase the internal capacitance of LEDs and improve the current of GaN-based LEDs Expansion capability, so as to improve the antistatic ability of GaN-based LEDs, and can reduce the operating voltage, improve luminous efficiency, simple process, no additional growth time, and increase production capacity

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