Manufacturing method of backside image sensor

An image sensor, back-illuminated technology, used in semiconductor/solid-state device manufacturing, radiation control devices, electrical components, etc., can solve the problems of poor optoelectronic characteristics and output quality, high manufacturing costs, and complex manufacturing methods.

Inactive Publication Date: 2015-05-13
WUHAN XINXIN SEMICON MFG CO LTD
View PDF6 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of the above problems, the present invention provides a method for preparing a back-illuminated image sensor to solve the defects in the prior art that the prep

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of backside image sensor
  • Manufacturing method of backside image sensor
  • Manufacturing method of backside image sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] The core idea of ​​the present invention is to integrate the metal leads of the back-illuminated image sensor with the Pad, and simultaneously prepare the metal isolation barrier to provide the basis for the subsequent color filter buried process, thereby improving the simplification of the image sensor manufacturing process , reduce the preparation cost and improve the output image quality.

[0041] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0042] Such as figure 1 Shown is the flow chart of the preparation method of the back-illuminated image sensor in the embodiment of the present invention. First, provide a bonded wafer with a photosensitive area (that is, a metal isolation barrier and a buried color filter area) and a bottom metal layer; secondly, etch the bonded wafer to form an exposed bottom metal layer. Interconnect holes on t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention refers to the technical field of semiconductor manufacturing, and particularly relates to a manufacturing method of a backside image sensor. The manufacturing method of the backside image sensor comprises the steps: forming an interconnection hole through etching a bonded wafer, and filling a metal to form a metal lead; meanwhile, synchronously preparing a metal isolating grid and a Pad layer contacted with the metal lead at the back side of the bonded wafer, and then embedding a color filter in the metal isolating grid. According to the manufacturing method of the backside image sensor, a metal layer in the bonded wafer can be derived and integrated with the Pad, thus requirements of simple and low-cost manufacturing technique can be realized on a certain extent; meanwhile, the metal isolating grid synchronously prepared with the Pad provides a good embedding environment for the subsequent color filter, a light path is minimized, and the optical-electrical characteristic and the output quality of the backside image sensor are greatly improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for preparing a back-illuminated image sensor. Background technique [0002] With the continuous maturity and development of semiconductor manufacturing technology, image sensors are increasingly used in digital cameras, PC Cameras, video phones, third-generation mobile phones, video conferencing, intelligent security systems, car reversing sensors, toys and industrial, medical, etc. in other fields. [0003] For example, CMOS image sensors are optoelectronic components and CMOS image sensors are gradually becoming the mainstream of image sensors because their manufacturing methods are compatible with existing integrated circuit manufacturing methods, and their performance has many advantages over the original charge-coupled device (CCD). , which can integrate the driving circuit and the pixel, which simplifies the hardware design and reduces the pow...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/50H01L21/60H01L27/146
Inventor 胡思平胡胜董金文
Owner WUHAN XINXIN SEMICON MFG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap