Manufacturing method of backside image sensor
An image sensor, back-illuminated technology, used in semiconductor/solid-state device manufacturing, radiation control devices, electrical components, etc., can solve the problems of poor optoelectronic characteristics and output quality, high manufacturing costs, and complex manufacturing methods.
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[0040] The core idea of the present invention is to integrate the metal leads of the back-illuminated image sensor with the Pad, and simultaneously prepare the metal isolation barrier to provide the basis for the subsequent color filter buried process, thereby improving the simplification of the image sensor manufacturing process , reduce the preparation cost and improve the output image quality.
[0041] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.
[0042] Such as figure 1 Shown is the flow chart of the preparation method of the back-illuminated image sensor in the embodiment of the present invention. First, provide a bonded wafer with a photosensitive area (that is, a metal isolation barrier and a buried color filter area) and a bottom metal layer; secondly, etch the bonded wafer to form an exposed bottom metal layer. Interconnect holes on t...
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