Visible-blind ultraviolet detector based on Beta-Ga2O3/SiC heterojunction thin film and fabrication method of visible-blind ultraviolet detector

An ultraviolet detector, -ga2o3 technology, applied in the field of ultraviolet detectors, can solve the problems of weak signal processing ability and sunlight interference, etc., and achieve the effect of sensitive response, stable performance and simple operation

Active Publication Date: 2016-07-06
ZHEJIANG SCI-TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, most of the commercialized semiconductor ultraviolet flame detectors are not based on "sun-blind" detection, are easily interfered by sunlight, and have relatively weak processing ability for weak signals.

Method used

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  • Visible-blind ultraviolet detector based on Beta-Ga2O3/SiC heterojunction thin film and fabrication method of visible-blind ultraviolet detector
  • Visible-blind ultraviolet detector based on Beta-Ga2O3/SiC heterojunction thin film and fabrication method of visible-blind ultraviolet detector
  • Visible-blind ultraviolet detector based on Beta-Ga2O3/SiC heterojunction thin film and fabrication method of visible-blind ultraviolet detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Proceed as follows:

[0028] 1) Pretreatment of n-type 6H-SiC substrate: put n-type 6H-SiC substrate into V(HF):V(H 2 o 2 )=1:5 solution soaked to remove the natural oxide layer, then ultrasonic cleaning with acetone, ethanol and deionized water respectively, and vacuum drying;

[0029] 2) Place the target and substrate: place the Ga 2 o 3 The target is placed on the target stage of the laser molecular beam epitaxy system, and the n-type 6H-SiC substrate processed in step 1) is fixed on the sample holder and put into the vacuum chamber;

[0030] 3) β-Ga 2 o 3 Thin film deposition process: first vacuumize the chamber, feed oxygen, adjust the pressure in the vacuum chamber, heat the n-type 6H-SiC substrate, and grow β-Ga 2 o 3 film, after the film growth is completed, the resulting β-Ga 2 o 3 The thin film is annealed in situ; among them, Ga 2 o 3 The distance between the target and the n-type 6H-SiC substrate was set at 5 cm, and the chamber pressure after vac...

Embodiment 2

[0035] Steps (1), (2) and (4) are all the same as in Example 1. In step (3), the chamber is first evacuated, oxygen is introduced, the pressure in the vacuum chamber is adjusted, and the n-type 6H-SiC substrate is heated to grow β-Ga 2 o 3 film, after the film growth is completed, the resulting β-Ga 2 o 3 The thin film is annealed in situ; among them, Ga 2 o 3 The distance between the target and the n-type 6H-SiC substrate was set at 5 cm, and the chamber pressure after vacuuming was 1×10 -6 Pa, the chamber pressure is 1×10 after oxygen is introduced -3 Pa, laser energy is 400mJ / cm 2 , the laser pulse frequency is 1Hz, the laser wavelength is 248nm, the heating temperature of n-type 6H-SiC substrate is 750℃, β-Ga 2 o 3 The annealing temperature of the film is 700° C., and the annealing time is 1.5 hours.

[0036] The resulting β-Ga 2 o 3 The chemical composition and structure of the film are similar to Example 1. Based on β-Ga 2 o 3 / SiC thin-film sun-blind ultra...

Embodiment 3

[0038] Steps (1), (2) and (4) are all the same as in Example 1. In step (3), the chamber is first evacuated, oxygen is introduced, the pressure in the vacuum chamber is adjusted, and the n-type 6H-SiC substrate is heated to grow β-Ga 2 o 3 film, after the film growth is completed, the resulting β-Ga 2 o 3 The thin film is annealed in situ; among them, Ga 2 o 3 The distance between the target and the n-type 6H-SiC substrate was set at 5 cm, and the chamber pressure after vacuuming was 1×10 -6 Pa, the chamber pressure is 1×10 after oxygen is introduced -3 Pa, laser energy is 400mJ / cm 2 , the laser pulse frequency is 1Hz, the laser wavelength is 248nm, the heating temperature of n-type 6H-SiC substrate is 750℃, β-Ga 2 o 3 The annealing temperature of the film is 750° C., and the annealing time is 1.5 hours.

[0039] The resulting β-Ga 2 o 3 The chemical composition and structure of the film are similar to Example 1. Based on β-Ga 2 o 3 / SiC thin-film sun-blind ultra...

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Abstract

The invention relates to an ultraviolet detector, in particular to a visible-blind ultraviolet detector based on a Beta-Ga2O3/SiC heterojunction thin film and a fabrication method of the visible-blind ultraviolet detector. According to the fabrication method, a layer of Beta-Ga2O3 thin film is deposited on an n-type 6H-SiC substrate by a laser molecular beam epitaxial technique, and then a layer of Ti/Au thin film is deposited on the n-type 6H-SiC substrate and the Beta-Ga2O3 thin film through a mask by a radio frequency magnetron sputtering to be used as an electrode. The fabricated visible-blind ultraviolet detector has the advantages of stable performance, response sensitivity, small dark current and high potential application; and moreover, the fabrication method has the characteristics of high process controllability, simplicity in operation, high universality, restorability of repeated test and the like, and has great application prospect.

Description

technical field [0001] The invention relates to an ultraviolet detector, in particular to an ultraviolet detector based on β-Ga 2 o 3 Solar-blind ultraviolet detector of / SiC heterojunction film and its preparation method. technical background [0002] With the development of ultraviolet detection technology, more and more people pay attention to ultraviolet detectors. At present, the flame detection on the market is mainly based on infrared detection, but due to the large amount of infrared rays in nature, such as human body infrared radiation, etc., it is easy to interfere with the detector, resulting in false alarms, resulting in unnecessary manpower and material losses. ; But the "solar-blind" ultraviolet detector is less disturbed by the environment because the received signal is the light in the ultraviolet band, and the ultraviolet light in nature is absorbed by the atmosphere. [0003] β-Ga 2 o 3 It is a semiconductor material with deep ultraviolet characteristi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/109H01L31/18
CPCH01L31/109H01L31/18H01L31/1812Y02P70/50
Inventor 王顺利安跃华郭道友李培刚钱银平王坤唐为华
Owner ZHEJIANG SCI-TECH UNIV
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