Preparation method of solar blind type ultraviolet detector based on Ga2O3/CuAlO2 heterojunction

An ultraviolet detector, p-cualo2 technology, applied in the field of ultraviolet detectors, can solve the problems of weak signal processing ability, sunlight interference, etc., and achieve the effects of sensitive response, stable performance and high rectification ratio

Active Publication Date: 2017-02-22
北京镓创科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, most of the commercialized semiconductor ultraviolet flame detectors are not based on "sun-blind" detection, are easily interfered by sunlight, and have relatively weak processing ability for weak signals.

Method used

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  • Preparation method of solar blind type ultraviolet detector based on Ga2O3/CuAlO2 heterojunction
  • Preparation method of solar blind type ultraviolet detector based on Ga2O3/CuAlO2 heterojunction
  • Preparation method of solar blind type ultraviolet detector based on Ga2O3/CuAlO2 heterojunction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Proceed as follows:

[0029] 1) Quartz substrate pretreatment: ultrasonically clean the quartz substrate with acetone, ethanol and deionized water for 15 minutes, and blow dry with nitrogen;

[0030] 2) Place the target and substrate: place the Ga 2 o 3 Target material and CuAlO 2 The target is placed on the target stage of the radio frequency magnetron sputtering system, and the quartz substrate processed in step 1) is fixed on the sample holder and put into the vacuum chamber;

[0031] 3)p-CuAlO 2 Thin film deposition process: first vacuumize the chamber, heat the quartz substrate, feed oxygen and argon, adjust the pressure in the vacuum chamber, and grow CuAlO 2 film, after the film growth is completed, the obtained CuAlO2 The film was annealed in situ; among them, CuAlO 2 The distance between the target and the quartz substrate was set at 3 cm, and the cavity pressure after vacuuming was 1.5×10 -4 Pa, the chamber pressure is 1Pa after oxygen and argon are intr...

Embodiment 2

[0037] Steps (1), (2) and (4) are all the same as in Example 1. In step (3), the chamber is first evacuated, the quartz substrate is heated, oxygen and argon are introduced, the pressure in the vacuum chamber is adjusted, and CuAlO is grown. 2 film, after the film growth is completed, the obtained CuAlO 2 The film was annealed in situ; among them, CuAlO 2 The distance between the target and the quartz substrate was set at 3 cm, and the cavity pressure after vacuuming was 1.5×10 -4 Pa, the chamber pressure is 1Pa after oxygen and argon are introduced, and the ratio of argon to oxygen is 3:2, the power is 120W, the heating temperature of the quartz substrate is 750°C, p-CuAlO 2 The annealing temperature of the film is 950°C, and the annealing time is 6 hours; in step (4), the chamber is first evacuated, and the p-CuAlO in step 3) is heated 2 Thin film, feed oxygen, adjust the pressure in the vacuum chamber, before that, in p-CuAlO 2 Add a layer of mask plate on the film. gr...

Embodiment 3

[0040] Steps (1), (2) and (5) are all the same as in Example 1. In step (3), the chamber is first evacuated, the quartz substrate is heated, oxygen and argon are introduced, the pressure in the vacuum chamber is adjusted, and CuAlO is grown. 2 film, after the film growth is completed, the obtained CuAlO 2 The film was annealed in situ; among them, CuAlO 2 The distance between the target and the quartz substrate was set at 3 cm, and the cavity pressure after vacuuming was 1.5×10 -4 Pa, the chamber pressure is 1Pa after oxygen and argon are introduced, and the ratio of argon to oxygen is 3:2, the power is 120W, the heating temperature of the quartz substrate is 750°C, p-CuAlO 2 The annealing temperature of the film is 1000°C, and the annealing time is 5 hours; in step (4), the chamber is first vacuumed, and the p-CuAlO in step 3) is heated 2 Thin film, feed oxygen, adjust the pressure in the vacuum chamber, before that, in p-CuAlO 2 Add a layer of mask plate on the film. gr...

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Abstract

The invention relates to a preparation method of a solar blind type ultraviolet detector based on Ga2O3 / CuAlO2 heterojunction. The method is characterized in that a layer of p-CuAlO2 thin film is deposited on a quartz (SiO2) substrate through a radio frequency magnetron sputtering technology; then, a layer of n-Ga2O3 thin film is deposited on the p-CuAlO2 thin film by using a mask plate through the radio frequency magnetron sputtering technology; the area of the n-Ga2O3 thin film is half of the area of the p-CuAlO2 thin film; finally, a layer of Ti / Au thin film is deposited on the p-CuAlO2 and n-Ga2O3 thin films by the radio frequency magnetron sputtering technology and is used as an electrode. The preparation method has the advantages that the prepared solar blind type ultraviolet detector has stable performance, sensitive response, small dark current and wide application range; in addition, the preparation method has the characteristics of high process controllability, simple operation, good universality, recoverability during repeated test and the like; great application prospects are realized.

Description

technical field [0001] The present invention relates to a kind of ultraviolet detector, specifically refers to a kind of based on n-Ga 2 o 3 / p-CuAlO 2 A method for preparing a heterojunction sun-blind ultraviolet detector. [0002] technical background [0003] With the development of ultraviolet detection technology, more and more people pay attention to ultraviolet detectors. At present, the flame detection on the market is mainly based on infrared detection, but due to the large amount of infrared rays in nature, such as human body infrared radiation, etc., it is easy to interfere with the detector, resulting in false alarms, resulting in unnecessary manpower and material losses. ; But the "solar-blind" ultraviolet detector is less disturbed by the environment because the received signal is the light in the ultraviolet band, and the ultraviolet light in nature is absorbed by the atmosphere. [0004] n-Ga 2 o 3 It is a semiconductor material with deep ultraviolet cha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/109
CPCH01L31/109H01L31/18Y02P70/50
Inventor 李小云黄咸康吕铭时浩泽钱银平王坤王顺利
Owner 北京镓创科技有限公司
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