Semiconductor device

Abstract

The invention provides a semiconductor device excellent in bonding property between a p-type semiconductor layer, an n-type semiconductor layer and an i-type semiconductor layer, and thus having enhanced semiconductor properties. The invention manufactures a semiconductor device at least including an n-type semiconductor layer including a first semiconductor as a major component, an i-type semiconductor layer including a second semiconductor as a major component and a p-type semiconductor layer including a third semiconductor as a major component. The first, second and third semiconductors areall oxide semiconductors having a corundum structure, and the obtained semiconductor device is used for power devices and the like.

Description

technical field [0001] In particular, the present invention relates to semiconductor devices useful for power devices. Background technique [0002] PiN diodes having n-type semiconductor layers, i-type semiconductor layers and p-type semiconductor layers are known. When the PiN diode is turned on, holes are injected from the p-type semiconductor layer to the i-type semiconductor layer, electrons are injected from the n-type semiconductor layer to the i-type semiconductor layer, and conductivity modulation occurs in the i-type semiconductor layer. When the PiN diode is turned off, the carriers (holes and electrons) present in the high resistance region are discharged from the p-type semiconductor layer and the cathode region, and the PiN diode becomes non-conductive. [0003] Patent Document 1 describes that in a PiN diode, protons are irradiated from both the n-type semiconductor layer side and the p-type semiconductor layer side toward the i-type semiconductor layer side,...

AI Technical Summary

Problems solved by technology

However, there are problems in that the respective interfaces between the n-type semiconductor layer and the p-type semiconductor layer and the i-type semiconductor layer are adversely affected by the irradiation of protons, and crystal defects locally appear in the i-type semiconductor layer. etc., resulting in reduced electrical characteristics of PiN diodes

Furthermore, electrical characteristics such as withstand voltage cannot be sufficiently satisfied.

[0004] In addition, Patent Document 2 describes that in order to increase the withstand voltage of a PiN diode, the i-type semiconductor layer is formed to be thicker than 50 μm, and the entire region of the i-type semiconductor layer is made to contain oxygen to form atomic holes and oxygen. combined with recombination defects, thereby reducing the reverse recovery current

However, the PiN diode described in Patent Document 2 needs to have a thick i-type semiconductor layer of 50 μm or more in order to increase the breakdown voltage.

In addition, there is a problem that good PiN bonding cannot be achieved sufficiently

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