A batch preparation method of a suspended nanowire manipulator

A technology of nanowires and manipulators, which is applied in the field of batch preparation of suspended nanowire manipulators. It can solve problems such as obstacles to rapid analysis, shape changes, and fractures, and achieve good semiconductor characteristics, avoid parasitic effects, and avoid interference from environmental factors.

Active Publication Date: 2019-06-07
NANJING UNIV
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Problems solved by technology

Based on the traditional vapor-liquid-solid (VLS) growth mechanism, vertical random nanowires only need to go through ultrasonic and drying steps to obtain in-plane suspended nano-linear structures, while through the planar solid-liquid-solid (IPSLS) growth mechanism The nanowire structure with any defined shape will be stressed by the surface tension of the solution during the transfer and drying process, resulting in changes or even breakage of the originally defined shape, which gr

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  • A batch preparation method of a suspended nanowire manipulator
  • A batch preparation method of a suspended nanowire manipulator
  • A batch preparation method of a suspended nanowire manipulator

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Embodiment Construction

[0028] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0029] like figure 2 Shown is a method for preparing a batch of suspended nanowire manipulators, which uses colloidal materials to transfer the self-assembled nanomanipulator array to a flexible substrate to achieve the acquisition and detection of tiny objects. The preparation process may include the following steps:

[0030]1) Use crystalline silicon, glass or a metal film covered with a dielectric layer as the substrate, and deposit an amorphous dielectric layer (such as amorphous silicon oxide SiO2, silicon nitride SiNx, etc.) on it using one or more thin film deposition techniques Wait);

[0031] 2) Realize the required planar pattern by using photolithography technology, define the step position of the slope guiding channel, and etch the dielectric layer by using inductively coupled plasma (ICP) etching or reactive ion etching (RIE) technology; ...

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Abstract

The invention discloses a batch preparation method of a suspended nanowire manipulator. The method comprises the following steps: preparing a nanowire array growing on the edge of a slope step definedby photoetching based on an IPSLS growth mode, then, spin-coating a layer of oxygen resin colloid on the substrate on which the silicon nanowires grow; carrying out photoetching pattern operation, removing an amorphous silicon dielectric layer on the surface of the substrate by wet etching, suspending an epoxy resin colloid thin film adhered to a nanowire array on the surface of a solution, fullyreplacing the epoxy resin colloid thin film with ethanol, and carrying out a drying technology to prepare the self-assembled suspended nanowire manipulator array. According to the invention, the nanowire array is transferred to the photoetched self-supporting substrate by using a transfer technology and a critical point drying technology; the influence of solution surface tension is eliminated, the original appearance of the nanowire manipulator is kept, finally, the operable suspended nanowire manipulator array is obtained, and the method can be widely applied to various fields of nano robots, biomedical cell detection, biosensors and the like.

Description

technical field [0001] The invention relates to a batch preparation method of suspended nanowire manipulators, which can be flexibly applied to various fields such as the acquisition or detection of biological cells or microstructures, and semiconductor sensor devices. Background technique [0002] Crystalline silicon or related semiconductor nanowires (Nanowire) are important materials for developing a new generation of high-performance large-area thin-film electronic devices, and have great application potential in the fields of new flexible sensing, biomedical sensing and detection, and logic storage. Based on the top-down electron beam direct writing (EBL) technology to prepare nanowire structures with diameters in the range of 10-100nm, the excellent characteristics of various new nanowire functional devices have been verified, but due to its high cost and low output And other factors, it has been difficult to obtain large-scale application. In contrast, through the bo...

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Application Information

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IPC IPC(8): B81C1/00
Inventor 余林蔚朱智旻马海光王军转
Owner NANJING UNIV
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