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Thin film transistor and method for manufacturing thin film transistor

A technology for thin film transistors and sintered bodies, which is applied in the manufacture of transistors, semiconductor/solid-state devices, semiconductor devices, etc., can solve the problems that the characteristics of TFT devices are difficult to become stable, it is difficult to obtain the characteristics of TFT devices, and the transmission characteristics are changed, and the cost is low. , high reliability, high productivity

Inactive Publication Date: 2012-05-16
BRIDGESTONE CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, although a good film-forming process can be performed in a state where the flow rate of oxygen is relatively easily controlled if a sputtering film-forming apparatus having plasma emission monitor control (PEM control) is used, by DC TFT devices with stable characteristics cannot be easily obtained by sputtering or RF sputtering
[0020] Second, the state of the interface between the semiconductor film surface (channel layer) and the source electrode / drain electrode and the state of the interface between the semiconductor film surface and the gate insulating film formed by the above-mentioned In-W-O film are easily unstable, Makes it difficult to stabilize the characteristics of TFT devices
Further, thirdly, the above-mentioned In-W-O film tends to have many defects generated therein, making it difficult to obtain stable TFT device characteristics
[0021] In addition, if the second and third problems exist, the transfer characteristics of the TFT device are greatly changed due to bias stress

Method used

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  • Thin film transistor and method for manufacturing thin film transistor
  • Thin film transistor and method for manufacturing thin film transistor
  • Thin film transistor and method for manufacturing thin film transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 to 3

[0112] Examples 1 to 3, Comparative Example 1

[0113] [Performance test of semiconductor film]

[0114] First, the In-W-Zn-O film, the In-W-Sn-O film, and the In-W-Sn-Zn film used as the channel layer in the thin film transistor belonging to the first invention of the present invention were evaluated in the following manner - Properties of O films.

[0115] Sample preparation

[0116] (Sample 1: In-W-Zn-O film)

[0117] On a 1.1 mm thick quartz glass substrate cleaned with ethanol and acetone, a 30 nm thick In-W-Zn-O film was formed by DC magnetron sputtering without heating the substrate. The sputtering conditions were as follows.

[0118] (sputtering condition)

[0119]

[0120] From the quartz glass substrate on which the In-W-Zn-O film was thus formed, a test piece of 10 mm x 10 mm was formed by dicing. A shadow mask was attached to the test piece in such a manner as to hide the central portion of the test piece, and ohmic electrodes composed of a 30 nm-thick I...

Embodiment 1

[0145] A thermal oxide film (SiO 2 , 300 nm thick) on a silicon wafer, a 30 nm thick In-W-Zn-O film was formed as a channel layer by DC magnetron sputtering. In this case, the sputtering conditions were set to be the same as in the case of forming the In—W—Zn—O film of Sample 1 described above, and the sputtering was performed without heating the substrate.

[0146] On the channel layer obtained as above, a 30 nm thick ITO film as source and drain electrodes was formed by DC magnetron sputtering process to fabricate as figure 1 A thin film transistor (TFT device) constructed as shown. In this case, the sputtering conditions were set to be the same as in the case of forming the ohmic electrode of Sample 1 described above. In forming the source and drain electrodes, patterning was performed using a shadow mask to obtain a channel length of 0.1 mm and a channel width of 6.4 mm.

Embodiment 2

[0148] A thermal oxide film (SiO 2 , 300 nm thick) on a silicon wafer, a 30 nm thick In-W-Sn-O film was formed as a channel layer by DC magnetron sputtering. In this case, the sputtering conditions were set to be the same as in the case of forming the In—W—Sn—O film of Sample 2 described above, and sputtering was performed without heating the substrate.

[0149] On the channel layer thus obtained, a 30 nm-thick ITO film was formed as a source electrode and a drain electrode by DC magnetron sputtering treatment to fabricate as figure 1 A thin film transistor (TFT device) constructed as shown. In this case, the sputtering conditions were set to be the same as in the case of forming the ohmic electrode of Sample 2 described above. In forming the source and drain electrodes, patterning was performed using a shadow mask in the same manner as in Example 1 above to obtain a channel length of 0.1 mm and a channel width of 6.4 mm.

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Abstract

(1) Disclosed is a thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said thin film transistor being characterized in that the channel layer is formed of an indium oxide film that is doped with tungsten and zinc and / or tin. (2) Disclosed is a bipolar thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said bipolar thin film transistor being characterized in that the channel layer is a laminate of an organic material film and a metal oxide film that contains indium doped with at least one of tungsten, tin or titanium and has an electrical resistivity that is controlled in advance. (3) Disclosed is a method for manufacturing a thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said method for manufacturing a thin film transistor being characterized in that at least the channel layer or a part of the channel layer is formed by forming a metal oxide film by a sputtering process using an In-containing target without heating the substrate, and a heat treatment is carried out after forming the above-described elements on the substrate.

Description

technical field [0001] The present invention relates to a method of manufacturing a thin film transistor whose channel layer or a part of the channel layer and further electrodes such as a source electrode, a drain electrode and a gate electrode are formed of an indium-containing metal oxide film. Background technique [0002] So far, amorphous silicon (a-Si) has been frequently used in thin film transistors, and therefore, high-temperature processing and expensive film-forming equipment are required. In addition, the need for high-temperature processing makes it difficult to manufacture devices (elements) onto a polymer substrate or the like. [0003] Therefore, in order to fabricate electronic devices on polyethylene terephthalate (PET) at low cost, it is necessary to develop a simple low-temperature process that does not require complicated equipment, or one or more of them that can obtain sufficient characteristics through simple processes. Various materials, effective ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786C23C14/08C23C14/58H01L21/336H01L21/363
CPCC23C14/086H01L29/66742H01L29/78693H01L21/02488H01L21/02565C23C14/3414H01L21/02573H01L21/02631H01L21/02381H01L21/0237H01L21/02581H01L29/66969H01L29/7869H01L29/78696
Inventor 椎野修杉江薰岩渊芳典
Owner BRIDGESTONE CORP
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