Thin film transistor and method for manufacturing thin film transistor

A technology for thin film transistors and sintered bodies, which is applied in the manufacture of transistors, semiconductor/solid-state devices, semiconductor devices, etc., can solve the problems that the characteristics of TFT devices are difficult to become stable, it is difficult to obtain the characteristics of TFT devices, and the transmission characteristics are changed, and the cost is low. , high reliability, high productivity
CN102460712AInactive Publication Date: 2012-05-16BRIDGESTONE CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
BRIDGESTONE CORP
Publication Date
2012-05-16
Estimated Expiration
Not applicable · inactive patent

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Abstract

(1) Disclosed is a thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said thin film transistor being characterized in that the channel layer is formed of an indium oxide film that is doped with tungsten and zinc and / or tin. (2) Disclosed is a bipolar thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said bipolar thin film transistor being characterized in that the channel layer is a laminate of an organic material film and a metal oxide film that contains indium doped with at least one of tungsten, tin or titanium and has an electrical resistivity that is controlled in advance. (3) Disclosed is a method for manufacturing a thin film transistor comprising elements, namely a source electrode, a drain electrode, a gate electrode, a channel layer and a gate insulating film, said method for manufacturing a thin film transistor being characterized in that at least the channel layer or a part of the channel layer is formed by forming a metal oxide film by a sputtering process using an In-containing target without heating the substrate, and a heat treatment is carried out after forming the above-described elements on the substrate.
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Description

technical field

[0001] The present invention relates to a method of manufacturing a thin film transistor whose channel layer or a part of the channel layer and further electrodes such as a source electrode, a drain electrode and a gate electrode are formed of an indium-containing metal oxide film. Background technique

[0002] So far, amorphous silicon (a-Si) has been frequently used in thin film transistors, and therefore, high-temperature processing and expensive film-forming equipment are required. In addition, the need for high-temperature processing makes it difficult to manufacture devices (elements) onto a polymer substrate or the like.

[0003] Therefore, in order to fabricate electronic devices on polyethylene terephthalate (PET) at low cost, it is necessary to develop a simple low-temperature process that does not require complicated equipment, or one or more of them that can obtain sufficient characteristics through simple processes. Various materials, effective ...

Claims

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