Preparation method of hybridized hierarchical structure sensitive thin-film sensing device based on two-dimensional material

Abstract

The invention discloses a preparation method of a hybridized hierarchical structure sensitive thin-film sensing device based on a two-dimensional material. The sensing device comprises a single crystal semiconductor substrate, an insulation layer, an interdigital electrode layer, a first PDDA film layer, a reduction-oxidation graphene film layer, a second PDDA film layer and a hierarchical structure ZnO-PSS thin film which are sequentially overlapped according to a preparation order. The preparation method mainly comprises the following steps: preparing an interdigital electrode device; preparing a film layer material required by the sensing device, and preparing the hybridized hierarchical structure sensitive sensing device by adopting a layer-by-layer self-assembling method. The preparation method has the advantages of fully utilizing characteristics of large specific area, low electronic noise, good semiconductor property and negative electricity of reduced-oxidized graphene and combining the structure characteristic of a hierarchical structure zinc oxide to prepare a hybridized hierarchical structure sensitive thin film; the process is simple, the repeatability is good, and the prepared sensing device can be used in the field of gas detection.

Description

technical field

[0001] The invention belongs to the field of gas sensors and sensitive electronics, and in particular relates to a gas sensor device based on a two-dimensional material reduced graphene oxide and zinc oxide with a hybrid hierarchical structure sensitive film and a preparation method thereof. Background technique

[0002] In recent years, graphene-based new two-dimensional layered nanomaterials have rapidly attracted widespread attention internationally because of their unique structural characteristics, which exhibit many unique properties in electricity, heat, light, and force. The characteristics of large specific surface area, good semiconductor characteristics and low electronic noise of two-dimensional materials make them very sensitive to the surrounding environment, which brings new opportunities for the development of gas sensors.

[0003] Graphene used in the field of gas sensors can be prepared by exfoliation or chemical vapor deposition (Chemical V...

Examples

preparation example Construction

[0019] The preparation method of the above-mentioned hybrid hierarchical structure sensitive thin-film sensor device based on two-dimensional materials proposed by the present invention, the process flow includes the following steps:

[0020] 1) Preparation of interdigitated electrode device:

[0021] 1.1) Cleaning the single crystal semiconductor substrate 1: Put the single crystal semiconductor substrate into a mixture of hydrogen peroxide and concentrated sulfuric acid with a volume ratio of 1:4 and cook at 80-85°C for 10-15 minutes to remove surface stains and use deionized Rinse with water for 10-15 minutes, dry for later use; wherein, the single-crystal semiconductor substrate is an N-type phosphorus-doped single-polish silicon substrate, (100) crystal orientation, and a resistivity of 1-10Ω·cm;

[0022] 1.2) Growing insulating layer 2: growing silicon dioxide (SiO2) by thermal oxidation 2 ), the thickness is 100-300nm, after the oxidation is completed, the SiO 2 Prote...

Embodiment 1

[0044] Embodiment 1 is a typical example of the content of the present invention.

[0045] The hybrid hierarchical structure sensitive thin film sensing device based on two-dimensional materials in this embodiment, such as figure 1 As shown, it includes a single crystal semiconductor substrate 1, an insulating layer 2, an interdigital electrode 3, a first PDDA thin film layer 4, a reduced graphene oxide thin film layer 5, a second PDDA thin film layer 6, and a ZnO-PSS thin film 7. Among them, the single crystal semiconductor substrate 1 used is N-type single-polished Si, (100) crystal orientation, resistivity 3-6Ω·cm, and thickness 470um; the insulating layer 2 is SiO grown by thermal oxidation. 2 layer with a thickness of 1000nm; electrode 3 is a Ti / Au laminated interdigitated structure with a thickness of 10 / 80nm; film layer 4 is a PDDA film deposited by self-assembly method; film layer 5 is graphite oxide deposited by self-assembly method The graphene oxide film layer is o...

Embodiment 2

[0071] Embodiment 2 is a typical example of the content of the present invention.

[0072] The graphene-based hybrid hierarchical structure sensitive thin film sensor structure of this embodiment includes a single crystal semiconductor substrate 1, an insulating layer 2, an interdigital electrode layer 3, a first PDDA thin film layer 4, a reduced graphene oxide thin film layer 5, The second PDDA thin film layer 6, ZnO-PSS thin film 7. Among them, the single crystal semiconductor substrate 1 used is N-type single-polished Si, (100) crystal orientation, resistivity 3-6Ω·cm, and thickness 470um; the insulating layer 2 is SiO grown by thermal oxidation 2 layer with a thickness of 300nm; the electrode layer 3 is a Ti / Au laminated interdigitated structure with a thickness of 30 / 120nm; the film layer 4 is a PDDA film deposited by a self-assembly method; the film layer 5 is an oxide film deposited by a self-assembly method. Graphene thin film layer, and obtained reduced graphene oxid...

technical field

[0001] The invention belongs to the field of gas sensors and sensitive electronics, and in particular relates to a gas sensor device based on a two-dimensional material reduced graphene oxide and zinc oxide with a hybrid hierarchical structure sensitive film and a preparation method thereof. Background technique

[0002] In recent years, graphene-based new two-dimensional layered nanomaterials have rapidly attracted widespread attention internationally because of their unique structural characteristics, which exhibit many unique properties in electricity, heat, light, and force. The characteristics of large specific surface area, good semiconductor characteristics and low electronic noise of two-dimensional materials make them very sensitive to the surrounding environment, which brings new opportunities for the development of gas sensors.

[0003] Graphene used in the field of gas sensors can be prepared by exfoliation or chemical vapor deposition (Chemical V...

Examples

preparation example Construction

[0019] The preparation method of the above-mentioned hybrid hierarchical structure sensitive thin-film sensor device based on two-dimensional materials proposed by the present invention, the process flow includes the following steps:

[0020] 1) Preparation of interdigitated electrode device:

[0021] 1.1) Cleaning the single crystal semiconductor substrate 1: Put the single crystal semiconductor substrate into a mixture of hydrogen peroxide and concentrated sulfuric acid with a volume ratio of 1:4 and cook at 80-85°C for 10-15 minutes to remove surface stains and use deionized Rinse with water for 10-15 minutes, dry for later use; wherein, the single-crystal semiconductor substrate is an N-type phosphorus-doped single-polish silicon substrate, (100) crystal orientation, and a resistivity of 1-10Ω·cm;

[0022] 1.2) Growing insulating layer 2: growing silicon dioxide (SiO2) by thermal oxidation 2 ), the thickness is 100-300nm, after the oxidation is completed, the SiO 2 Prote...

Embodiment 1

[0044] Embodiment 1 is a typical example of the content of the present invention.

[0045] The hybrid hierarchical structure sensitive thin film sensing device based on two-dimensional materials in this embodiment, such as figure 1 As shown, it includes a single crystal semiconductor substrate 1, an insulating layer 2, an interdigital electrode 3, a first PDDA thin film layer 4, a reduced graphene oxide thin film layer 5, a second PDDA thin film layer 6, and a ZnO-PSS thin film 7. Among them, the single crystal semiconductor substrate 1 used is N-type single-polished Si, (100) crystal orientation, resistivity 3-6Ω·cm, and thickness 470um; the insulating layer 2 is SiO grown by thermal oxidation. 2 layer with a thickness of 1000nm; electrode 3 is a Ti / Au laminated interdigitated structure with a thickness of 10 / 80nm; film layer 4 is a PDDA film deposited by self-assembly method; film layer 5 is graphite oxide deposited by self-assembly method The graphene oxide film layer is o...

Embodiment 2

[0071] Embodiment 2 is a typical example of the content of the present invention.

[0072] The graphene-based hybrid hierarchical structure sensitive thin film sensor structure of this embodiment includes a single crystal semiconductor substrate 1, an insulating layer 2, an interdigital electrode layer 3, a first PDDA thin film layer 4, a reduced graphene oxide thin film layer 5, The second PDDA thin film layer 6, ZnO-PSS thin film 7. Among them, the single crystal semiconductor substrate 1 used is N-type single-polished Si, (100) crystal orientation, resistivity 3-6Ω·cm, and thickness 470um; the insulating layer 2 is SiO grown by thermal oxidation 2 layer with a thickness of 300nm; the electrode layer 3 is a Ti / Au laminated interdigitated structure with a thickness of 30 / 120nm; the film layer 4 is a PDDA film deposited by a self-assembly method; the film layer 5 is an oxide film deposited by a self-assembly method. Graphene thin film layer, and obtained reduced graphene oxid...

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