Device and method for growng large diameter 6H-SiC monocrystal with semiconductor property

Abstract

The present invention relates to apparatus and method of growing great diameter 6H-SiC monocrystal with semiconductor characteristic and belongs to the field of crystal growing technology. The apparatus includes growing chamber, water cooler on the side wall of the growing chamber, graphite crucible, heat insulating material, induction heating system, cylindrical vapor guiding plate of Ta inside the crucible, and cylinder. Regulating the position of the crucible relative to the inducing coil can minimize the temperature at the crystal seed inside the crucible and increase the temperature field distribution in the growing direction. Altering the atmosphere composition or material compounding can obtain great diameter SiC monocrystal with n-type, p-type or semi-insulating type semiconductor characteristic. By means of selecting the Si plane of the crystal seed and growing temperature, the crystal form may be controlled and 6H-SiC may be obtained.

Description

(1) Technical field [0001] The invention relates to a device and method for growing a 6H-SiC single crystal with semiconductor characteristics and a diameter not less than 2 inches, belonging to the technical field of crystal growth. (2) Background technology [0002] Silicon carbide is famous for its high hardness (second only to diamond). Its powder is widely used in abrasives and abrasive tools for machining. The history of artificial synthesis can be traced back to the 19th century. However, the growth of SiC single crystals is particularly difficult. Although there have been more than 50 years of single crystal growth history, the crystal quality and size still cannot meet the device requirements. SiC single crystal has a wide band gap and is often called the third-generation wide-bandgap semiconductor material. It has high thermal conductivity, 20 times that of sapphire, high carrier saturation drift velocity, and low dielectric constant. , can be used to prepare high...

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Problems solved by technology

Calculations have shown that in order to grow single crystals directly from silicon carbide melts by Czochralski or zone melting methods like silicon or gallium arsenide, in order to maintain the 1:1 ratio of carbon to silicon in the melt, it is necessary to create 3200 The harsh conditions of high temperature above 100,000 ℃ and high pressure above 100,000 atmospheres were a natural obstacle at that time and even now, limiting the development of silicon carbide crystals and device industrialization.

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