The present invention relates to apparatus and method of growing great
diameter 6H-SiC monocrystal with
semiconductor characteristic and belongs to the field of
crystal growing technology. The apparatus includes growing chamber,
water cooler on the side wall of the growing chamber,
graphite crucible, heat insulating material,
induction heating system, cylindrical vapor guiding plate of Ta inside the
crucible, and cylinder. Regulating the position of the
crucible relative to the inducing coil can minimize the temperature at the
crystal seed inside the crucible and increase the temperature field distribution in the growing direction. Altering the
atmosphere composition or material compounding can obtain great
diameter SiC monocrystal with n-type, p-type or semi-insulating type
semiconductor characteristic. By means of selecting the Si plane of the
crystal seed and growing temperature, the crystal form may be controlled and 6H-SiC may be obtained.